Abstract: The present invention provides a substrate for a semiconductor device and a semiconductor device using the same. The substrate for a semiconductor device comprises a ceramic supporting base plate formed by a polycrystalline aluminum nitride (AlN) sintered body; at least one silicon oxide layer formed on the base plate by a sol-gel method wherein the at least one silicon oxide layer has an average roughness less than the base plate to block polycrystalline orientation of the base plate and has a total thickness in a range of 10˜5000 nm, the silicon oxide layer is only formed from the sol-gel method and is not single crystalline; a first buffer layer comprising aluminum nitride (AlN) on the at least one silicon oxide layer with a thickness of 0.1˜10 ?m; and a gallium nitride layer formed on the first buffer layer and having a single-crystal crystalline structure.

Abstract: The present invention provides a substrate for a semiconductor device and a semiconductor device using the same. The substrate for a semiconductor device comprises a ceramic supporting base plate formed by a polycrystalline aluminum nitride (AlN) sintered body; at least one silicon oxide layer formed on the base plate by a sol-gel method wherein the at least one silicon oxide layer has an average roughness less than the base plate to block polycrystalline orientation of the base plate and has a total thickness in a range of 10˜5000 nm, the silicon oxide layer is only formed from the sol-gel method and are not single crystalline; a first buffer layer comprising aluminum nitride (AlN) on the at least one silicon oxide layer with a thickness of 0.1˜10 ?m; and a gallium nitride layer formed on the first buffer layer and having a single-crystal crystalline structure.

Abstract: The present invention provides a lighting device and method for forming the same. The lighting device comprises a base having a first surface, a conductive wiring layer formed on the first surface, and a light emitting diode module comprising a substrate and at least one light emitting diode disposed on the substrate wherein the substrate of the light emitting diode module is disposed on the conductive wiring layer by a surface mount method. In one embodiment, the base is preferably made of ceramics.

Abstract: The present invention relates to a heat spreading element with an AlN film including: a substrate which may be composed of a single bulk material, a multi-layered sample, or a composite material; and an AlN film deposited on the surface of the substrate, wherein the thickness of the AlN film is in a range of 1 nm to 10 ?m, and the AlN film is used to conduct the heat from a heat-generating device to the substrate, and method for manufacturing the same.