Patents by Inventor Pushkar Prabhakar Apte

Pushkar Prabhakar Apte has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Approaches for mitigating the narrow poly-line effect in silicide formation
    Patent number: 6376372
    Abstract: A silicide process using a pre-anneal amorphization implant prior to silicide anneal. A layer of titanium is deposited and reacted to form titanium silicide (32) and titanium nitride. The titanium nitride is removed and a pre-anneal amorphization implant is performed to enable increased transformation of the silicide (32) from a higher resistivity phase to a lower resistivity phase. A heavy dopant species (40) is used for the pre-anneal amorphization implant such as arsenic, antimony, or germanium. After the implant, the silicide anneal is performed to accomplish the transformation. An advantage of the invention is providing a silicide process having reduced silicide sheet resistance for narrow polysilicon lines.
    Type: Grant
    Filed: June 2, 1995
    Date of Patent: April 23, 2002
    Assignee: Texas Instruments Incorporated
    Inventors: Ajit Pramod Paranjpe, Pushkar Prabhakar Apte, Mehrdad M. Moslehi