Patents by Inventor Puthur D. Paulson

Puthur D. Paulson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180240918
    Abstract: The present disclosure relates to photovoltaic devices that include a chalcogenide-containing photovoltaic light-absorber having a composition profile defined by at least a first region, a second region, and a third region. The second region is located between the first region and the third region. Each region of the chalcogenide-containing photovoltaic light-absorber includes Cu, In, Ga, Al, and at least one chalcogen. The concentration of Al present in the second region is less than the concentration of Al present in each of the first region and third region. Methods of making such chalcogenide-containing photovoltaic light-absorbers are also disclosed.
    Type: Application
    Filed: August 1, 2016
    Publication date: August 23, 2018
    Inventors: Brian GOODFELLOW, Puthur D. PAULSON
  • Patent number: 8410357
    Abstract: Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a Ma-(Group VIA)b compound, where M is a transition metal the Group VIA designates Te, Se and/or S.
    Type: Grant
    Filed: January 28, 2010
    Date of Patent: April 2, 2013
    Assignee: Solexant Corp.
    Inventors: Puthur D. Paulson, Craig Leidholm, Damoder Reddy, Charlie Hotz
  • Patent number: 8143512
    Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the absorber layer and the window layer to create improved junctions. The present invention also discloses methods for making and surface treatments for thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration to create devices with improved junctions.
    Type: Grant
    Filed: March 24, 2009
    Date of Patent: March 27, 2012
    Assignee: Solexant Corp.
    Inventors: Puthur D. Paulson, Charlie Hotz, Craig Leidholm, Damoder Reddy
  • Patent number: 7858872
    Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.
    Type: Grant
    Filed: March 13, 2009
    Date of Patent: December 28, 2010
    Assignee: Solexant Corp.
    Inventors: Charlie Hotz, Puthur D. Paulson, Craig Leidholm, Damoder Reddy
  • Publication number: 20100229931
    Abstract: Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a Ma-(Group VIA)b compound, where M is a transition metal the Group VIA designates Te, Se and/or S.
    Type: Application
    Filed: January 28, 2010
    Publication date: September 16, 2010
    Applicant: Solexant Corp.
    Inventors: Damoder Reddy, Charlie Hotz, Puthur D. Paulson, Craig Leidholm
  • Publication number: 20090235986
    Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.
    Type: Application
    Filed: March 13, 2009
    Publication date: September 24, 2009
    Applicant: Solexant Corp
    Inventors: Charlie Hotz, Puthur D. Paulson, Craig Leidholm, Damoder Reddy