Patents by Inventor Puvvada Venugopal

Puvvada Venugopal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6534833
    Abstract: The invention comprises a semiconductor device with protection circuitry and a method of protecting an integrated circuit from electrostatic discharge. One aspect of the invention is a semiconductor device with protection circuitry which comprises an integrated circuit having at least one bond pad. A protection circuit is electrically connected to the bond pad and is operable to prevent damage to the integrated circuit during an electrostatic discharge event. The protection circuit comprises a first MOSFET having a first gate electrode connected in series with a second MOSFET having a second gate electrode wherein the first gate electrode and second gate electrode are commonly controlled in response to an electrostatic discharge event.
    Type: Grant
    Filed: March 18, 1998
    Date of Patent: March 18, 2003
    Assignee: Texas Instruments Incorporated
    Inventors: Charvaka Duvvury, Michael D. Chaine, Puvvada Venugopal
  • Patent number: 6493850
    Abstract: For quantitatively identifying sensitivities against electrostatic discharge (ESD) and latch-up in an integrated circuit (IC) design (before the actual IC is fabricated), the disclosed computer system and method combine information from the design netlist, the elements model, a safe operating file, and a list of stress simulations, and apply a simulated, quantified ESD event to the design. The observed sensitivities of the design elements to ESD and latch-up are then quantitatively analyzed, critical stress values are judged, and element failures recorded. Finally, element and location lists of sensitivities and failures are output in a specific format.
    Type: Grant
    Filed: February 16, 2001
    Date of Patent: December 10, 2002
    Assignee: Texas Instruments Incorporated
    Inventors: Puvvada Venugopal, Snehamay Sinha, Sridhar Ramaswamy, Charvaka Duvvury, Guru C. Prasad, C. S. Raghu, Gopalaro Kadamati
  • Publication number: 20020152447
    Abstract: For quantitatively identifying sensitivities against electrostatic discharge (ESD) and latch-up in an integrated circuit (IC) design (before the actual IC is fabricated), the disclosed computer system and method combine information from the design netlist, the elements model, a safe operating file, and a list of stress simulations, and apply a simulated, quantified ESD event to the design. The observed sensitivities of the design elements to ESD and latch-up are then quantitatively analyzed, critical stress values are judged, and element failures recorded. Finally, element and location lists of sensitivities and failures are output in a specific format.
    Type: Application
    Filed: February 16, 2001
    Publication date: October 17, 2002
    Inventors: Puvvada Venugopal, Snehamay Sinha, Sridhar Ramaswamy, Charvaka Duvvury, Guru C. Prasad, C.S. Raghu, Gopalaro Kadamati