Patents by Inventor Pyeong Won Oh

Pyeong Won Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitor for a semiconductor device and manufacturing method thereof
    Patent number: 7741671
    Abstract: Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.
    Type: Grant
    Filed: January 22, 2009
    Date of Patent: June 22, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Pyeong Won Oh, Woo Jin Kim, Hoon Jung Oh, Hyo Gun Yoon, Hyo Seob Yoon, Baik II Choi
  • CAPACITOR FOR A SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20090122461
    Abstract: Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.
    Type: Application
    Filed: January 22, 2009
    Publication date: May 14, 2009
    Applicant: Hynix Semiconductor Inc.
    Inventors: Pyeong Won OH, Woo Jin Kim, Hoon Jung Oh, Hyo Gun Yoon, Hyo Seob Yoon, Baik II Choi
  • Capacitor for a semiconductor device and manufacturing method thereof
    Patent number: 7498628
    Abstract: Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.
    Type: Grant
    Filed: August 25, 2005
    Date of Patent: March 3, 2009
    Assignee: Hynix Semiconductor Inc.
    Inventors: Pyeong Won Oh, Woo Jin Kim, Hoon Jung Oh, Hyo Gun Yoon, Hyo Seob Yoon, Baik Il Choi