Abstract: Protective barrier includes a soft metal that inhibits or delays thermal or grinding attack tool penetration. The soft metal, which may be disposed between other layers and otherwise delays thermal attack by expanding or “puffing” during attack. The soft metal can inhibit mechanical attack by rapid ablation and wear of a cutting wheel or blade. The protective barrier may additionally include an oxide or carbide layer.

Abstract: Semiconductor-processing chamber components and methods for making the components are presented. One component includes a base including a metallic material, a metal matrix composite (MMC) layer, and a dielectric layer. The MMC layer at least partially covers the base, and the MMC layer comprises a metallic material as a continuous phase and a non-metallic material as a disperse phase. Further, the MMC layer is formed on the base using solid-state additive manufacturing (SSAM). The dielectric layer is made of a non-metallic material and is directly on the MMC layer.

Abstract: A component for use inside a semiconductor chamber with a laser textured surface facing a vacuum region inside the semiconductor chamber is provided.