Abstract: An image sensing device includes a first subpixel block, a second subpixel block, a first conversion gain transistor, and a second conversion gain transistor. The first subpixel block includes a first floating diffusion region and a plurality of unit pixels sharing the first floating diffusion region. The second subpixel block includes a second floating diffusion region coupled to the first floating diffusion region and a plurality of unit pixels sharing the second floating diffusion region. The first conversion gain transistor includes a first impurity region coupled to the first and second floating diffusion regions and a second impurity region coupled to a first conversion gain capacitor. The second conversion gain transistor includes a third impurity region coupled to the second impurity region of the first conversion gain transistor and a fourth impurity region coupled to a second conversion gain capacitor.

Abstract: An image sensing device includes a first unit pixel block, a second unit pixel block, and an isolation transistor. The first unit pixel block includes a first common floating diffusion node, first photoelectric conversion elements, first transfer transistors and a first conversion gain transistor configured to change capacitance of the first common floating diffusion node. The second unit pixel block adjacent to the first unit pixel block includes a second common floating diffusion node, second photoelectric conversion elements, second transfer transistors and a second conversion gain transistor configured to change capacitance of the second common floating diffusion node. The isolation transistor located in a boundary region between the first unit pixel block and the second unit pixel block isolates the first conversion gain transistor and the second conversion gain transistor from each other.

Abstract: An image sensing device includes a first substrate including a first surface and a second surface facing away from the first surface, the first substrate including a pixel region and a pad region located outside the pixel region, the pixel region being structured to include pixel that generate electrical signals based on light incident upon the first surface to reach to the pixels, an insulation layer disposed under the second surface and including interconnects and an electrode pad, a pad open region disposed in the pad region and structured to expose the electrode pad, and a substrate isolation layer disposed outside the pixel region in the first substrate and formed to penetrate the first substrate. The substrate isolation layer includes a lens material.

Abstract: A stacked semiconductor device may include a first semiconductor chip including a first bonded surface and a second semiconductor chip including a second bonded surface facing the first bonded surface, the first and second bonded surfaces being bonded to each other. The first semiconductor chip includes a first substrate, at least one first power interconnect disposed between the first substrate and the first bonded surface of the first semiconductor chip and configured to carry a power-supply voltage therethrough, and at least one first power hybrid bonding structure disposed to be in contact with the first power interconnect and configured to extend along the same path as a routing path of the first power interconnect.

Abstract: An image sensor is disclosed. The image sensor includes a plurality of photodiodes arranged in first and second directions in a matrix, a plurality of first isolation layers, each two adjacent first isolation layers arranged in the first direction being spaced apart from each other by a first distance, each first isolation layer being interposed between adjacent photodiodes arranged in the second direction, and a plurality of second isolation layers, each two adjacent second isolation layers arranged in the second direction being spaced apart from each other by a second distance, each second isolation layer being interposed between adjacent photodiodes arranged in the first direction.

Abstract: An image sensor may include a pixel array including a plurality of pixel blocks structured to convert light into electrical signals. Each of the plurality of pixel blocks may include a first light receiving circuit including a plurality of unit pixels which share a first floating diffusion; a second light receiving circuit arranged adjacent to the first light receiving circuit in a second direction, and including a plurality of unit pixels which share a second floating diffusion; a first driving circuit and a second driving circuit positioned between the first light receiving circuit and the second light receiving circuit, and aligned in a first direction crossing the second direction; and an intercoupling circuit configured to electrically couple the first floating diffusion, the second floating diffusion, the first driving circuit and the second driving circuit.

Abstract: An image sensor is disclosed. The image sensor includes a plurality of photodiodes arranged in first and second directions in a matrix, a plurality of first isolation layers, each two adjacent first isolation layers arranged in the first direction being spaced apart from each other by a first distance, each first isolation layer being interposed between adjacent photodiodes arranged in the second direction, and a plurality of second isolation layers, each two adjacent second isolation layers arranged in the second direction being spaced apart from each other by a second distance, each second isolation layer being interposed between adjacent photodiodes arranged in the first direction.

Abstract: An image sensing device includes a floating diffusion node, a reset circuit coupled between a supply terminal of a high voltage and the floating diffusion node, and suitable for resetting the floating diffusion node with the high voltage during a reference period based on a reset control signal, a photodiode coupled between a supply terminal of a low voltage and a coupling node, and suitable for generating a photocharge based on incident light during an exposure period, a transmission block coupled between the coupling node and the floating diffusion node, and suitable for transmitting the photocharge to the floating diffusion node during a transmission period based on a transmission control signal, and a selection circuit coupled between an input terminal of a boost control signal and an output terminal of a pixel signal, and suitable for generating the pixel signal with a boost voltage greater than the high voltage during the transmission period based on a selection control signal and a voltage applied to t

Abstract: An image sensing device may include a base substrate; a pixel array supported by the base substrate and structured to include a plurality of image sensing pixels responsive to light to produce pixel signals and a guard ring region arranged in a region outside a first surface of the pixel array; a plurality of first conductive type isolation layers formed in the base substrate from a first surface of the guard ring region to a first depth in the base substrate; at least one second conductive type isolation layer formed in the base substrate from the first surface of the guard ring region to a second depth in the base substrate and positioned between the first conductive type isolation layers; and a first isolation layer formed in the base substrate from a second surface of the guard ring region to a third depth in the base substrate, the first isolation layer extending to the first conductive type isolation layer and the second conductive type isolation layer adjacent to each other.

Abstract: An image sensing device may include: a plurality of pixels included in a first row; a first signal line configured to transfer a boosting voltage to the plurality of pixels; a first switch transistor coupled between the first signal line and a second signal line disposed adjacent to the top side of the first signal line; and a second switch transistor coupled between the first signal line and a third signal line disposed adjacent to the bottom side of the first signal line.

Abstract: An image sensing device includes a first subpixel block, a second subpixel block, a first conversion gain transistor, and a second conversion gain transistor. The first subpixel block includes a first floating diffusion region and a plurality of unit pixels sharing the first floating diffusion region. The second subpixel block includes a second floating diffusion region coupled to the first floating diffusion region and a plurality of unit pixels sharing the second floating diffusion region. The first conversion gain transistor includes a first impurity region coupled to the first and second floating diffusion regions and a second impurity region coupled to a first conversion gain capacitor. The second conversion gain transistor includes a third impurity region coupled to the second impurity region of the first conversion gain transistor and a fourth impurity region coupled to a second conversion gain capacitor.

Abstract: An image sensing device includes a first unit pixel block, a second unit pixel block, and an isolation transistor. The first unit pixel block includes a first common floating diffusion node, a plurality of first photoelectric conversion elements, a plurality of first transfer transistors configured to transmit the photocharges generated by the first photoelectric conversion elements to the first common floating diffusion node, and a first conversion gain transistor configured to change capacitance of the first common floating diffusion node.

Abstract: An image sensing device is provided to include a pixel region including image pixels and a peripheral region located outside of the pixel region. The peripheral region includes logic circuits located to receive the pixel signals from the pixel region and configured to process the pixel signals, and a capacitor located adjacent to the logic circuits. The capacitor includes an active region including a first impurity region and a second impurity region formed over the first impurity region, a recessed structure including a portion formed in the active region, the portion including a conductive layer extending along a direction that the first impurity region and the second impurity region are stacked and an insulation layer formed between the conductive layer and the active region, and a first junction formed in the active region and spaced apart from the recessed structure by a predetermined distance.

Abstract: An image sensing device is disclosed. The image sensing device includes a plurality of unit pixels arranged as an array of unit pixels in a first direction and a second direction perpendicular to the first direction, and a device isolation structure wherein each of the unit pixels is disposed in a region isolated from adjacent unit pixels and includes a single photoelectric conversion element, a single floating diffusion region, and at least three transistors. The single photoelectric conversion element, the single floating diffusion region, and the at least three transistors are located in a region isolated by the device isolation structure.

Abstract: An image sensing device is provided to include a pixel array including unit pixel blocks. Each of the unit pixel blocks includes a first subpixel block including a first floating diffusion (FD) region and unit pixels surrounding the first FD region, a second subpixel block including a second FD region electrically coupled to the first FD region and unit pixels surrounding the second FD region. The image sensing device also includes a first pixel transistor array and a second pixel transistor array that are disposed at opposite sides of the first subpixel block in the first direction. The first and the pixel transistor array include a first drive transistor set and a second drive transistor set, respectively.

Abstract: An image sensing device is provided to include a pixel region and a peripheral region located outside of the pixel region. The peripheral region includes logic circuits located to receive a pixel signals from the pixel region and configured to process the pixel signals and a capacitor located adjacent to the logic circuits. The capacitor includes an active region, a recessed structure, and a first junction. The active region includes a first impurity region and a second impurity region formed over the first impurity region. The recessed structure is at least partly disposed in the active region and including a first portion disposed in the active region and including a conductive material and a second portion surrounding the first portion and including an insulation material. The first junction is formed in the active region and spaced apart from the recessed structure by a predetermined distance.

Abstract: An image sensing device may include: a plurality of pixels included in a first row; a first signal line configured to transfer a boosting voltage to the plurality of pixels; a first switch transistor coupled between the first signal line and a second signal line disposed adjacent to the top side of the first signal line; and a second switch transistor coupled between the first signal line and a third signal line disposed adjacent to the bottom side of the first signal line.

Abstract: An image sensor may include a pixel array including a plurality of pixel blocks operable to convert light into electrical signals. Each of the plurality of pixel blocks may include a first light receiving circuit including a plurality of unit pixels that share a first floating diffusion; a second light receiving circuit arranged adjacent to the first light receiving circuit in a second direction, and including a plurality of unit pixels that share a second floating diffusion; a first driving circuit positioned between the first light receiving circuit and the second light receiving circuit; a second driving circuit positioned adjacent to the other side facing away from one side of the first light receiving circuit or the second light receiving circuit, which is adjacent to the first driving circuit; and a third driving circuit positioned adjacent to the first driving circuit or the second driving circuit.

Abstract: An image sensor is disclosed. The image sensor includes a plurality of photodiodes arranged in first and second directions in a matrix, a plurality of first isolation layers, each two adjacent first isolation layers arranged in the first direction being spaced apart from each other by a first distance, each first isolation layer being interposed between adjacent photodiodes arranged in the second direction, and a plurality of second isolation layers, each two adjacent second isolation layers arranged in the second direction being spaced apart from each other by a second distance, each second isolation layer being interposed between adjacent photodiodes arranged in the first direction.

Abstract: An image sensor includes a first unit pixel group including a plurality of photoelectric conversion elements forming a first shared pixel and configured to generate photocharges in response to an incident light, the first unit pixel group further including first transistor elements and first floating diffusion regions configured to store the generated photocharges; and a second unit pixel group located adjacent to the first unit pixel group and including a plurality of photoelectric conversion elements forming a second shared pixel and configured to generate photocharges in response to the incident light, the second unit pixel group further including second transistor elements and second floating diffusion regions configured to store the photocharges, wherein the first shared pixel includes some of the first transistor elements and some of the second transistor elements.