Abstract: A method of fabricating a semiconductor memory device is provided. In accordance with preferred embodiments of methods of the present invention, a cell array region and a peripheral circuitry region are defined by forming a field region on the surface of a semiconductor. In the cell array region, a number of wordlines are formed at a predetermined interval. Each region demarcated by the wordlines is filled with a semiconductor material in which source region, drain region and contact regions for connection between capacitors and bitlines are formed. Then, exposed entire surfaces in the cell array region and in the peripheral circuitry region are planarized. On the planarized surface, bitlines are formed without forming bitline contacts. In order to insulate the bitlines from each other, an insulation sidewall spacer is formed on each sidewall of the bitlines.

Abstract: The invention relates to an antenna device of a low impedance for generating a large quantity of inductively coupled plasma to process a large size of a specimen with adjustment for a uniform distribution in the density of plasma, comprising: a high frequency power source; a first antenna for receiving the high frequency power supplied from the high frequency power source; and a second antenna connected in parallel with the first antenna for receiving the high frequency power supplied from the high frequency power source, wherein a resonant state is kept between the first and second antennas.

Abstract: The present invention relates to a method for measuring radical species distribution in plasma by determining the intensity of the light emitted from the radical species and plasma parameters in plasma with the aid of optical and electrostatic probes, and an apparatus for measuring the radical species distribution. The method of the invention comprises the steps of: (i) measuring integral light intensity in a vacuum container by an optical probe inserted to the vacuum container; (ii) determining light intensity at each point of the vacuum container by differentiating the integral light intensity; (iii) measuring current and voltage applied to the electrostatic probe in the vacuum container; (iv) determining plasma parameters from the measured current and voltage; and, (v) measuring distribution of radical species from the light intensity and plasma parameters.