Abstract: Disclosed is a display apparatus including a substrate; an insulating layer disposed on the substrate; a wiring layer disposed on the insulating layer; and a side surface protective layer disposed on a side surface of the wiring layer and having an electrical insulation property, wherein the wiring layer has a stack structure in which a plurality of layers are stacked. In this regard, the side surface protective layer covers a side surface of each of at least some of the plurality of layers of the stack structure.

Abstract: A display apparatus can include an adhesive layer disposed on the substrate, a pixel driver chip disposed on the adhesive layer and including a plurality of pads disposed on an upper surface thereof, a planarization surrounding side surfaces of the pixel driver chip, first wires disposed on the planarization layer, and pad contact layers disposed on a plurality of pads of the pixel driver chip. Here, the pad contact layers and the first wires can have the same thickness and can be composed of the same conductive material layer.

Abstract: A display apparatus is disclosed. The display apparatus according to the present disclosure may include a substrate including an active area and a non-active area around the active area, a first shield layer disposed on the substrate, a first thin film transistor including a first semiconductor layer on the first shield layer, a first etch stopper on the first semiconductor layer, a second thin film transistor including a second semiconductor layer on the substrate, and a second etch stopper on the second semiconductor layer.

Abstract: Provided is a display device. The display device comprises a first flexible substrate, a second flexible substrate including a first area, a second area, and a third area, and an intermediate layer between the first flexible substrate and the second flexible substrate. A plurality of pixels is disposed in the first area, and the plurality of pixels includes a first transistor including a polycrystalline semiconductor and a first gate electrode, a second transistor including an oxide semiconductor and a second gate electrode composed of a first metal layer, a second metal layer, and a third metal layer, and a third transistor including the polycrystalline semiconductor disposed in the second area, and a plurality of dams, a first line, a second line, and a cathode are disposed in the third area, and the cathode extends to the first area and the second area.

Abstract: An organic light emitting display device including both a polycrystalline semiconductor element and an oxide semiconductor element, and a method of manufacturing the display device are disclosed. In order to solve the damage of an oxide semiconductor pattern during a heat treatment process in the process of forming the oxide semiconductor element, until the process of forming the polycrystalline semiconductor element is completed, after one portion of a connection electrode connecting a polycrystalline semiconductor pattern to source and drain electrodes is formed in advance, then by forming the other portion of the connection electrode for completing the connection between the source and drain electrodes to the polycrystalline semiconductor pattern in the process of forming the oxide semiconductor element, the connection electrode can have a connection node between two edges thereof, and thereby, the performance of the oxide semiconductor element can be improved.

Abstract: An organic light-emitting diode (OLED) display device using hybrid type thin-film transistors (TFTs) is disclosed. The OLED display device includes an etch stopper film on a semiconductor pattern to prevent over etching of the semiconductor pattern located on a lower position and source and drain electrodes are brought in direct contact with the semiconductor pattern while passing through the etch stopper film to prevent malfunction of the TFTs due to surface resistance due to the etch stopper film. Thus, characteristics of the TFTs and process stability are secured.