Patents by Inventor Pzng Lin

Pzng Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Compound semiconductor material and method for forming an active layer of a thin film transistor device
    Patent number: 7666764
    Abstract: A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.
    Type: Grant
    Filed: July 20, 2006
    Date of Patent: February 23, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Jia-Chong Ho, Jen-Hao Lee, Cheng-Chung Lee, Yu-Wu Wang, Chun-Tao Lee, Pzng Lin