Abstract: Provided are a spectral camera and an electronic apparatus including the same. The spectral camera includes an image sensor including a plurality of channels configured to detect a plurality of central wavelengths; an optical module configured to be movable with respect to the image sensor to provide an image of an object on the image sensor; a memory configured to store first information about a change in an optical characteristic of each of the plurality of channels in the image sensor, the change in the optical characteristic of each of the plurality of channels corresponding to a movement of the optical module; and a processor configured to: obtain the first information from the memory, obtain second information corresponding to the plurality of central wavelengths detected by the image sensor, and obtain third information by correcting the second information based on the first information.

Abstract: A semiconductor wafer inspection method is provided. The semiconductor wafer inspection method includes: providing a wafer with target and reference dies; obtaining a candidate image of a first region of the target die and a reference image of a second region of the reference die; performing an imaging process on the candidate image to obtain a high resolution candidate image including sub-pixels for each pixel of the candidate image; performing the imaging process on the reference image to obtain a high resolution reference image including sub-pixels for each pixel of the candidate image; shifting the high resolution reference image in units of the sub-pixels; obtaining a difference image based on a difference between the high resolution candidate image and the high resolution reference image; and detecting whether a defect signal generated based on the difference image exceeds a threshold value.

Abstract: Provided are a method and a device, for processing spectrum data of an image sensor. The method includes obtaining spectrum response signals corresponding to channels of spectrum data of light, the spectrum data being obtained from an object by an image sensor; determining a set of bases corresponding to the obtained spectrum response signals; performing, based on the determined set of bases, a change of basis on at least one basis included in the determined set of bases; and generating, by using a pseudo inverse, reconstructed spectrum data from the spectrum response signals on which the change of basis has been performed.

Abstract: Disclosed is a reconfigurable metasurface antenna. The reconfigurable metasurface antenna includes: a power feeding unit receiving and propagating electromagnetic waves in the form of a concentric wave; and a variable metasurface unit positioned at an upper part of the power feeding unit, having a plurality of unit radiators, and radiating the electromagnetic waves transmitted from the power feeding unit according to a combination of activated unit radiators among the plurality of unit radiators to have different phase and polarization components.

Abstract: Provided are a method and a device, for processing spectrum data of an image sensor. The method includes obtaining spectrum response signals corresponding to channels of spectrum data of light, the spectrum data being obtained from an object by an image sensor; determining a set of bases corresponding to the obtained spectrum response signals; performing, based on the determined set of bases, a change of basis on at least one basis included in the determined set of bases; and generating, by using a pseudo inverse, reconstructed spectrum data from the spectrum response signals on which the change of basis has been performed.

Abstract: Provided are a method and a device, for processing spectrum data of an image sensor. The method includes obtaining spectrum response signals corresponding to channels of spectrum data of light, the spectrum data being obtained from an object by an image sensor; determining a set of bases corresponding to the obtained spectrum response signals; performing, based on the determined set of bases, a change of basis on at least one basis included in the determined set of bases; and generating, by using a pseudo inverse, reconstructed spectrum data from the spectrum response signals on which the change of basis has been performed.

Abstract: Provided are a spectral camera and an electronic apparatus including the same. The spectral camera includes an image sensor including a plurality of channels configured to detect a plurality of central wavelengths; an optical module configured to be movable with respect to the image sensor to provide an image of an object on the image sensor; a memory configured to store first information about a change in an optical characteristic of each of the plurality of channels in the image sensor, the change in the optical characteristic of each of the plurality of channels corresponding to a movement of the optical module; and a processor configured to: obtain the first information from the memory, obtain second information corresponding to the plurality of central wavelengths detected by the image sensor, and obtain third information by correcting the second information based on the first information.

Abstract: Provided are a method and a device, for processing spectrum data of an image sensor. The method includes obtaining spectrum response signals corresponding to channels of spectrum data of light, the spectrum data being obtained from an object by an image sensor; determining a set of bases corresponding to the obtained spectrum response signals; performing, based on the determined set of bases, a change of basis on at least one basis included in the determined set of bases; and generating, by using a pseudo inverse, reconstructed spectrum data from the spectrum response signals on which the change of basis has been performed.

Abstract: A semiconductor wafer inspection method is provided. The semiconductor wafer inspection method includes: providing a wafer with target and reference dies; obtaining a candidate image of a first region of the target die and a reference image of a second region of the reference die; performing an imaging process on the candidate image to obtain a high resolution candidate image including sub-pixels for each pixel of the candidate image; performing the imaging process on the reference image to obtain a high resolution reference image including sub-pixels for each pixel of the candidate image; shifting the high resolution reference image in units of the sub-pixels; obtaining a difference image based on a difference between the high resolution candidate image and the high resolution reference image; and detecting whether a defect signal generated based on the difference image exceeds a threshold value.

Abstract: The present disclosure discloses an anti-reflection coating and a method of forming the same. According to one embodiment of the present disclosure, the anti-reflection coating includes a first layer positioned on a substrate to be spaced apart from the substrate by a first distance and a second layer positioned on the first layer to be spaced apart from the first layer by a second distance. In this case, the first and second layers are a metamaterial forming a structural double layer and are realized as an anomalous dispersive medium that does not absorb incident light. The structural double layer may realize spatiotemporal dispersion that varies depending on an incidence angle using the nonlocality of the electromagnetic wave reaction of incident light.

Abstract: Disclosed are mass flow controllers, apparatuses for manufacturing semiconductor devices, and methods of maintenance thereof. The mass flow controller may control an amount of a gas provided into a chamber. The mass flow controller may be configured to obtain an absolute volume of the gas provided into the chamber at a standard flow rate when the mass flow controller is initially used. The mass flow controller may be configured to obtain a detected flow rate of the gas provided at a measured flow rate after the mass flow controller has been used for a predetermined time. The mass flow controller may be configured to compare the detected flow rate and the standard flow rate to verify a full-scale error in the measured flow rate.

Abstract: The present disclosure discloses an anti-reflection coating and a method of forming the same. According to one embodiment of the present disclosure, the anti-reflection coating includes a first layer positioned on a substrate to be spaced apart from the substrate by a first distance and a second layer positioned on the first layer to be spaced apart from the first layer by a second distance. In this case, the first and second layers are a metamaterial forming a structural double layer and are realized as an anomalous dispersive medium that does not absorb incident light. The structural double layer may realize spatiotemporal dispersion that varies depending on an incidence angle using the nonlocality of the electromagnetic wave reaction of incident light.

Abstract: Disclosed herein is a system for non-contact measurement of an optoelectronic property. The system includes a sensing element configured to amplify an electromagnetic wave having a specific frequency, a thin film disposed on the sensing element such that an optoelectronic property of the thin film is measured, and an optoelectronic property measuring server configured to extract a physical property of the thin film based on the optoelectronic property of the thin film obtained when the electromagnetic wave amplified by the sensing element passes through the thin film.

Abstract: Disclosed are mass flow controllers, apparatuses for manufacturing semiconductor devices, and methods of maintenance thereof. The mass flow controller may control an amount of a gas provided into a chamber. The mass flow controller may be configured to obtain an absolute volume of the gas provided into the chamber at a standard flow rate when the mass flow controller is initially used. The mass flow controller may be configured to obtain a detected flow rate of the gas provided at a measured flow rate after the mass flow controller has been used for a predetermined time. The mass flow controller may be configured to compare the detected flow rate and the standard flow rate to verify a full-scale error in the measured flow rate.

Abstract: An optical device including slots and an apparatus employing the optical device are provided. An optical unit device for selectively transmitting electromagnetic waves of a wavelength range, includes a material layer including slots. A gap between the slots has a distance such that the optical unit device has a Q-factor of about 5 or more.

Abstract: An apparatus for manufacturing a semiconductor device is provided. The apparatus for manufacturing a semiconductor device may include a mass flow controller configured to control a flow of a process gas supplied to a process chamber, the mass flow controller configured to adjust an outflow rate of the process gas exiting the mass flow controller in response to a correction signal, the correction signal generated based on a difference between an inflow rate of the process gas flowing into the mass flow controller and a reference flow rate, a sensor configured to measure a chamber pressure inside the process chamber, an exhaust valve configured to adjust an exhaust speed of an exhaust gas exhausted from the process chamber; and a monitoring apparatus configured to detect a defect of the mass flow controller based on the correction signal, the chamber pressure, and the exhaust speed of the exhaust valve.

Abstract: Disclosed herein is a system for non-contact measurement of an optoelectronic property. The system includes a sensing element configured to amplify an electromagnetic wave having a specific frequency, a thin film disposed on the sensing element such that an optoelectronic property of the thin film is measured, and an optoelectronic property measuring server configured to extract a physical property of the thin film based on the optoelectronic property of the thin film obtained when the electromagnetic wave amplified by the sensing element passes through the thin film.

Abstract: An optical device including slots and an apparatus employing the optical device are provided. An optical unit device for selectively transmitting electromagnetic waves of a wavelength range, includes a material layer including slots. A gap between the slots has a distance such that the optical unit device has a Q-factor of about 5 or more.

Abstract: An optical device may include a substrate, a metal layer on the substrate, at least one first nano-structure in the layer, and at least one second nano-structure in the layer. The at least one first nano-structure may include a light source. The at least one first and second nano-structures may be spaced apart. A method of controlling a propagation direction of light output from an optical device that includes a metal layer on a substrate may include disposing first and second nano-structures in the layer; disposing at least one light source in the first nano-structure; and controlling the propagation direction of the light output from the at least one light source by changing at least one of a shape of the first nano-structure, a shape of the second nano-structure, a size of the first nano-structure, a size of the second nano-structure, and an interval between the first and second nano-structures.

Abstract: An optical device may include a substrate, a metal layer on the substrate, at least one first nano-structure in the layer, and at least one second nano-structure in the layer. The at least one first nano-structure may include a light source. The at least one first and second nano-structures may be spaced apart. A method of controlling a propagation direction of light output from an optical device that includes a metal layer on a substrate may include disposing first and second nano-structures in the layer; disposing at least one light source in the first nano-structure; and controlling the propagation direction of the light output from the at least one light source by changing at least one of a shape of the first nano-structure, a shape of the second nano-structure, a size of the first nano-structure, a size of the second nano-structure, and an interval between the first and second nano-structures.