Patents by Inventor Q Han Park
Q Han Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11962921Abstract: Provided are a method and a device, for processing spectrum data of an image sensor. The method includes obtaining spectrum response signals corresponding to channels of spectrum data of light, the spectrum data being obtained from an object by an image sensor; determining a set of bases corresponding to the obtained spectrum response signals; performing, based on the determined set of bases, a change of basis on at least one basis included in the determined set of bases; and generating, by using a pseudo inverse, reconstructed spectrum data from the spectrum response signals on which the change of basis has been performed.Type: GrantFiled: June 21, 2022Date of Patent: April 16, 2024Assignees: SAMSUNG ELECTRONICS CO., LTD., Korea University Research and Business FoundationInventors: Suyeon Lee, Q-Han Park, Unjeong Kim, Hyunjun Ma
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Publication number: 20240094053Abstract: Provided are a spectral camera and an electronic apparatus including the same. The spectral camera includes an image sensor including a plurality of channels configured to detect a plurality of central wavelengths; an optical module configured to be movable with respect to the image sensor to provide an image of an object on the image sensor; a memory configured to store first information about a change in an optical characteristic of each of the plurality of channels in the image sensor, the change in the optical characteristic of each of the plurality of channels corresponding to a movement of the optical module; and a processor configured to: obtain the first information from the memory, obtain second information corresponding to the plurality of central wavelengths detected by the image sensor, and obtain third information by correcting the second information based on the first information.Type: ApplicationFiled: March 13, 2023Publication date: March 21, 2024Applicants: SAMSUNG ELECTRONICS CO., LTD., Korea University Research and Business FoundationInventors: Suyeon LEE, Q-Han PARK, Unjeong KIM, Hojung KIM, Hyunjun MA
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Publication number: 20230128654Abstract: Provided are a method and a device, for processing spectrum data of an image sensor. The method includes obtaining spectrum response signals corresponding to channels of spectrum data of light, the spectrum data being obtained from an object by an image sensor; determining a set of bases corresponding to the obtained spectrum response signals; performing, based on the determined set of bases, a change of basis on at least one basis included in the determined set of bases; and generating, by using a pseudo inverse, reconstructed spectrum data from the spectrum response signals on which the change of basis has been performed.Type: ApplicationFiled: June 21, 2022Publication date: April 27, 2023Applicants: SAMSUNG ELECTRONICS CO., LTD., Korea University Research and Business FoundationInventors: Suyeon LEE, Q-Han Park, Unjeong Kim, Hyunjun Ma
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Publication number: 20230103349Abstract: A semiconductor wafer inspection method is provided. The semiconductor wafer inspection method includes: providing a wafer with target and reference dies; obtaining a candidate image of a first region of the target die and a reference image of a second region of the reference die; performing an imaging process on the candidate image to obtain a high resolution candidate image including sub-pixels for each pixel of the candidate image; performing the imaging process on the reference image to obtain a high resolution reference image including sub-pixels for each pixel of the candidate image; shifting the high resolution reference image in units of the sub-pixels; obtaining a difference image based on a difference between the high resolution candidate image and the high resolution reference image; and detecting whether a defect signal generated based on the difference image exceeds a threshold value.Type: ApplicationFiled: June 9, 2022Publication date: April 6, 2023Applicants: SAMSUNG ELECTRONICS CO., LTD., KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATIONInventors: Q-Han PARK, Sung Yoon RYU, Seunghyeok SON, Sujin LEE, Chan Gi JEON, Su-Hyun GONG, DongGun LEE, Younghoon SOHN
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Patent number: 11048025Abstract: The present disclosure discloses an anti-reflection coating and a method of forming the same. According to one embodiment of the present disclosure, the anti-reflection coating includes a first layer positioned on a substrate to be spaced apart from the substrate by a first distance and a second layer positioned on the first layer to be spaced apart from the first layer by a second distance. In this case, the first and second layers are a metamaterial forming a structural double layer and are realized as an anomalous dispersive medium that does not absorb incident light. The structural double layer may realize spatiotemporal dispersion that varies depending on an incidence angle using the nonlocality of the electromagnetic wave reaction of incident light.Type: GrantFiled: March 8, 2019Date of Patent: June 29, 2021Assignee: Korea University Research and Business FoundationInventors: Q Han Park, Ku Im, Ji Hun Kang
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Patent number: 10845232Abstract: Disclosed are mass flow controllers, apparatuses for manufacturing semiconductor devices, and methods of maintenance thereof. The mass flow controller may control an amount of a gas provided into a chamber. The mass flow controller may be configured to obtain an absolute volume of the gas provided into the chamber at a standard flow rate when the mass flow controller is initially used. The mass flow controller may be configured to obtain a detected flow rate of the gas provided at a measured flow rate after the mass flow controller has been used for a predetermined time. The mass flow controller may be configured to compare the detected flow rate and the standard flow rate to verify a full-scale error in the measured flow rate.Type: GrantFiled: June 20, 2018Date of Patent: November 24, 2020Inventors: Sangkil Lee, Yusin Yang, Sung Yoon Ryu, Q-Han Park, Hyun Lee
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Publication number: 20200081161Abstract: The present disclosure discloses an anti-reflection coating and a method of forming the same. According to one embodiment of the present disclosure, the anti-reflection coating includes a first layer positioned on a substrate to be spaced apart from the substrate by a first distance and a second layer positioned on the first layer to be spaced apart from the first layer by a second distance. In this case, the first and second layers are a metamaterial forming a structural double layer and are realized as an anomalous dispersive medium that does not absorb incident light. The structural double layer may realize spatiotemporal dispersion that varies depending on an incidence angle using the nonlocality of the electromagnetic wave reaction of incident light.Type: ApplicationFiled: March 8, 2019Publication date: March 12, 2020Applicant: Korea University Research and Business FoundationInventors: Q Han PARK, Ku IM, Ji Hun KANG
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Patent number: 10481188Abstract: Disclosed herein is a system for non-contact measurement of an optoelectronic property. The system includes a sensing element configured to amplify an electromagnetic wave having a specific frequency, a thin film disposed on the sensing element such that an optoelectronic property of the thin film is measured, and an optoelectronic property measuring server configured to extract a physical property of the thin film based on the optoelectronic property of the thin film obtained when the electromagnetic wave amplified by the sensing element passes through the thin film.Type: GrantFiled: January 18, 2018Date of Patent: November 19, 2019Assignee: Korea Institute of Science and TechnologyInventors: Minah Seo, Sanghun Lee, Chulki Kim, Q-Han Park, Jongho Choe, Jinsoo Kim
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Publication number: 20190170563Abstract: Disclosed are mass flow controllers, apparatuses for manufacturing semiconductor devices, and methods of maintenance thereof. The mass flow controller may control an amount of a gas provided into a chamber. The mass flow controller may be configured to obtain an absolute volume of the gas provided into the chamber at a standard flow rate when the mass flow controller is initially used. The mass flow controller may be configured to obtain a detected flow rate of the gas provided at a measured flow rate after the mass flow controller has been used for a predetermined time. The mass flow controller may be configured to compare the detected flow rate and the standard flow rate to verify a full-scale error in the measured flow rate.Type: ApplicationFiled: June 20, 2018Publication date: June 6, 2019Inventors: Sangkil Lee, Yusin Yang, Sung Yoon Ryu, Q-Han Park, Hyun Lee
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Patent number: 10288479Abstract: An optical device including slots and an apparatus employing the optical device are provided. An optical unit device for selectively transmitting electromagnetic waves of a wavelength range, includes a material layer including slots. A gap between the slots has a distance such that the optical unit device has a Q-factor of about 5 or more.Type: GrantFiled: April 14, 2017Date of Patent: May 14, 2019Assignees: SAMSUNG ELECTRONICS CO., LTD., KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATIONInventors: Jineun Kim, Younggeun Roh, Q Han Park, Yeonsang Park, Suyeon Lee
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Publication number: 20190139796Abstract: An apparatus for manufacturing a semiconductor device is provided. The apparatus for manufacturing a semiconductor device may include a mass flow controller configured to control a flow of a process gas supplied to a process chamber, the mass flow controller configured to adjust an outflow rate of the process gas exiting the mass flow controller in response to a correction signal, the correction signal generated based on a difference between an inflow rate of the process gas flowing into the mass flow controller and a reference flow rate, a sensor configured to measure a chamber pressure inside the process chamber, an exhaust valve configured to adjust an exhaust speed of an exhaust gas exhausted from the process chamber; and a monitoring apparatus configured to detect a defect of the mass flow controller based on the correction signal, the chamber pressure, and the exhaust speed of the exhaust valve.Type: ApplicationFiled: April 18, 2018Publication date: May 9, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Sang-kil LEE, Sung-yoon RYU, Hyun LEE, Yu-sin YANG, Q-han PARK
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Publication number: 20190086458Abstract: Disclosed herein is a system for non-contact measurement of an optoelectronic property. The system includes a sensing element configured to amplify an electromagnetic wave having a specific frequency, a thin film disposed on the sensing element such that an optoelectronic property of the thin film is measured, and an optoelectronic property measuring server configured to extract a physical property of the thin film based on the optoelectronic property of the thin film obtained when the electromagnetic wave amplified by the sensing element passes through the thin film.Type: ApplicationFiled: January 18, 2018Publication date: March 21, 2019Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Minah SEO, Sanghun LEE, Chulki KIM, Q-Han PARK, Jongho CHOE, Jinsoo KIM
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Publication number: 20170370773Abstract: An optical device including slots and an apparatus employing the optical device are provided. An optical unit device for selectively transmitting electromagnetic waves of a wavelength range, includes a material layer including slots. A gap between the slots has a distance such that the optical unit device has a Q-factor of about 5 or more.Type: ApplicationFiled: April 14, 2017Publication date: December 28, 2017Applicants: SAMSUNG ELECTRONICS CO., LTD., KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATIONInventors: Jineun KIM, Younggeun ROH, Q Han PARK, Yeonsang PARK, Suyeon LEE
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Patent number: 9499400Abstract: An optical device may include a substrate, a metal layer on the substrate, at least one first nano-structure in the layer, and at least one second nano-structure in the layer. The at least one first nano-structure may include a light source. The at least one first and second nano-structures may be spaced apart. A method of controlling a propagation direction of light output from an optical device that includes a metal layer on a substrate may include disposing first and second nano-structures in the layer; disposing at least one light source in the first nano-structure; and controlling the propagation direction of the light output from the at least one light source by changing at least one of a shape of the first nano-structure, a shape of the second nano-structure, a size of the first nano-structure, a size of the second nano-structure, and an interval between the first and second nano-structures.Type: GrantFiled: July 16, 2012Date of Patent: November 22, 2016Assignees: Samsung Electronics Co., Ltd., Korea Universisty Industrial & Academic Collaboration FoundationInventors: Jin-eun Kim, Q-han Park, Chang-won Lee, Yeon-sang Park, Young-geun Roh, Hwan-soo Suh, Jong-ho Choe
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Publication number: 20130070459Abstract: An optical device may include a substrate, a metal layer on the substrate, at least one first nano-structure in the layer, and at least one second nano-structure in the layer. The at least one first nano-structure may include a light source. The at least one first and second nano-structures may be spaced apart. A method of controlling a propagation direction of light output from an optical device that includes a metal layer on a substrate may include disposing first and second nano-structures in the layer; disposing at least one light source in the first nano-structure; and controlling the propagation direction of the light output from the at least one light source by changing at least one of a shape of the first nano-structure, a shape of the second nano-structure, a size of the first nano-structure, a size of the second nano-structure, and an interval between the first and second nano-structures.Type: ApplicationFiled: July 16, 2012Publication date: March 21, 2013Applicants: Korea University Industrial & Academic Collaboration Foundation, Samsung Electronics Co., Ltd.Inventors: Jin-eun Kim, Q-han Park, Chang-won Lee, Yeon-sang Park, Young-geun Roh, Hwan-soo Suh, Jong-ho Choe
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Publication number: 20120299047Abstract: Provided are a light emitting device, a light emitting device package, and a light unit. The light emitting device includes: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer. A surface of the light emitting structure has a plurality of first sides and second sides having curvatures in respectively different directions, which are alternately disposed.Type: ApplicationFiled: January 31, 2012Publication date: November 29, 2012Inventors: Tae Jin KIM, Q-Han Park
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Patent number: 7816699Abstract: Disclosed is a polarized light emitting diode (LED) capable of emitting polarized light in the front direction thereof by forming a first grating layer on a quantum well layer and forming a second grating layer on a substrate. The polarized LED includes a nitride thin film formed on a substrate, a quantum well layer formed on the nitride thin film, a first grating layer formed on the quantum well layer to allow a part of light generated from the quantum well layer to pass through the first grating layer and to reflect remaining light, and a second grating layer formed on the substrate to rotate the light reflected from the first grating layer such that the reflected light passes through the first grating layer.Type: GrantFiled: January 23, 2008Date of Patent: October 19, 2010Assignee: Korea University Industrial & Academic Collaboration FoundationInventors: Q-Han Park, Won-Jun Choi, Heon-Su Jeon
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Patent number: 7746475Abstract: A new high-performance, compact microgyroscope is implemented using a microlaser such as a microsphere laser or a microdisc laser that can be easily reduced in size. The microgyroscope includes a pumping unit for inputting pumping light for optical pumping, at least one microsphere or microdisc for oscillating a laser beam by performing optical pumping using light received from the pumping unit, an output coupler for receiving the oscillated laser beam from the microsphere or microdisc, and a photodetector for calculating a beat frequency due to interference between beams output from the output coupler to measure rotation. The pumping unit and the output coupler are constructed using a tapered optical fiber.Type: GrantFiled: October 6, 2008Date of Patent: June 29, 2010Assignees: Samsung Electronics Co., Ltd., Seoul National University Industry FoundationInventors: Q Han Park, Heon Su Jeon
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Publication number: 20090091763Abstract: A new high-performance, compact microgyroscope is implemented using a microlaser such as a microsphere laser or a microdisc laser that can be easily reduced in size. The microgyroscope includes a pumping unit for inputting pumping light for optical pumping, at least one microsphere or microdisc for oscillating a laser beam by performing optical pumping using light received from the pumping unit, an output coupler for receiving the oscillated laser beam from the microsphere or microdisc, and a photodetector for calculating a beat frequency due to interference between beams output from the output coupler to measure rotation. The pumping unit and the output coupler are constructed using a tapered optical fiber.Type: ApplicationFiled: October 6, 2008Publication date: April 9, 2009Applicants: SAMSUNG ELECTRONICS CO., LTD., SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATIONInventors: Q Han PARK, Heon Su JEON
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Publication number: 20080290336Abstract: Disclosed is a polarized light emitting diode (LED) capable of emitting polarized light in the front direction thereof by forming a first grating layer on a quantum well layer and forming a second grating layer on a substrate. The polarized LED includes a nitride thin film formed on a substrate, a quantum well layer formed on the nitride thin film, a first grating layer formed on the quantum well layer to allow a part of light generated from the quantum well layer to pass through the first grating layer and to reflect remaining light, and a second grating layer formed on the substrate to rotate the light reflected from the first grating layer such that the reflected light passes through the first grating layer.Type: ApplicationFiled: January 23, 2008Publication date: November 27, 2008Inventors: Q-Han PARK, Won-Jun Choi, Heon-Su Jeon