Abstract: A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene.

Abstract: A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is a copolymer of bis[3-(4-benzocyclobutenyl)]1,n (n=2-12) alkyldiol diacrylate (such as bis[3-(4-benzocyclobutenyl)]1,6 hexanediol diacrylate) and 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is a copolymer of bis[3-(4-benzocyclobutenyl)]1,n (n=2-12)alkyldiol diacrylate and 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene.

Abstract: A compound comprising i) one or more dienophile groups (A-functional groups), ii) one or more ring structures comprising two conjugated carbon-to-carbon double bonds and a leaving group L (B-functional groups), and iii) one or more addition polymerizable, telechelic, or graftable functional groups, excluding groups capable of cycloaddition reactions with acetylenic- or conjugated diene functionality (C?-functional groups), characterized in that the A-functional group of one monomer is capable of reaction under cycloaddition reaction conditions with the B-functional group of a second monomer to thereby form a polymer.

Abstract: A compound useful in the formation of polymeric dielectric films for semiconductor devices and the resulting cured films and devices, said compound comprising i) three or more dienophile groups (A-functional groups) and ii) a single ring structure comprising two conjugated carbon-to-carbon double bonds and a leaving group L (collectively referred to as a B-functional group), characterized in that one A-functional group of one molecule of the compound is capable of reaction under cycloaddition reaction conditions with the B-functional group of a second molecule and elimination of the leaving group L, to thereby form a polymer.

Abstract: A monomer suitable for use in forming low dielectric constant films in semiconductor devices comprising i) two dienophile groups (A-functional groups) attached to a single aromatic ring and ii) a second ring structure comprising two conjugated carbon-to-carbon double bonds and a leaving group L (B-functional group), characterized in that said single aromatic ring is directly covalently attached to one of the double bonded carbons of the B functional group or to a fused aromatic ring containing two such double bonded carbons of the B-functional group, and one A-functional group of one monomer is capable of reaction under cycloaddition reaction conditions with the B-functional group of a second monomer to thereby form a polymer.

Abstract: The present invention relates to a method for preparing polymeric films, preferably electroactive films, with enhanced physical properties by the steps of applying to a substrate a solution of a polymer containing pendant labile solubilizing groups, then removing the solvent and a sufficient concentration of the labile solubilizing groups render the polymer less soluble in the solvent than before the labile groups were removed. It is believed that the removal of pendant soluble groups a) permits optimization of the semiconducting backbone for charge transport performance, b) allows direct control of microstructure in the final film, and c) renders the final film more robust during subsequent process steps needed to construct multilayer devices.