Patents by Inventor Qamar A. Shams

Qamar A. Shams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5955678
    Abstract: A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.
    Type: Grant
    Filed: December 18, 1997
    Date of Patent: September 21, 1999
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: John J. Chapman, Qamar A. Shams, William T. Powers
  • Patent number: 5096881
    Abstract: The present invention provides a method for making Tl-Ca-Ba-Cu-O superconductive materials in a film shape. Pursuant to the method, after placing a Ca.sub.2 Ba.sub.2 Cu.sub.3 O.sub.7 powder onto some suitable substrate, such as platinum or copper, the substrate and powder are rolled between two rollers until a desired thickness is achieved. The film can then be taken off the substrate. Thallium oxide is then evaporated on the precursor film to make superconductive films. The Tl.sub.2 O.sub.3 can be evaporated in a furnace or vacuum.
    Type: Grant
    Filed: March 15, 1990
    Date of Patent: March 17, 1992
    Assignee: The University of Arkansas
    Inventors: Qamar A. Shams, Allen M. Hermann, Zhengzhi Sheng