Patents by Inventor Qi Hua Zhang

Qi Hua Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11958789
    Abstract: A method for determining a consistency coefficient of a power-law cement grout includes: determining a water-cement ratio of the power-law cement grout; according to engineering practice requirements, determining a time required to determine the consistency coefficient of the power-law cement grout; and obtaining the consistency coefficient of the power-law cement grout. The method is accurate and reliable, requires less calculation, etc.; and has very high practical value and popularization value in environmental protection and ecological restoration.
    Type: Grant
    Filed: December 12, 2023
    Date of Patent: April 16, 2024
    Assignee: KUNMING UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Zhi-quan Yang, Jun-fan Xiong, Ying-yan Zhu, Yi Yang, Yong-shun Han, Muhammad Asif Khan, Jian-bin Xie, Tian-bing Xiang, Bi-hua Zhang, Han-hua Xu, Jie Zhang, Shen-zhang Liu, Qi-jun Jia, Cheng-yin Ye, Gang Li
  • Patent number: 7923683
    Abstract: A method for analyzing a sample for the manufacture of integrated circuits, e.g., dynamic random access memory devices, commonly called DRAMS. The method also provides an integrated chip including a thickness, a width, and a length. In a specific embodiment, the integrated chip has at least one elongated structure through a portion of the thickness, while being normal to the width and the length. In a specific embodiment, the elongated structure has a structure width and a structure length that extends through a vertical portion of the thickness. The method includes removing a slice of the integrated chip from a portion of the thickness in a directional manner normal to the structure length. In a specific embodiment, the slice is provided through an entirety of the one elongated structure along the structure length to cause a portion of a thickness of the slice providing the elongated structure to be of a substantially uniform sample thickness.
    Type: Grant
    Filed: October 27, 2008
    Date of Patent: April 12, 2011
    Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Qi Hua Zhang, Chorng Shyr Niou, Pan Liu, Ming Li
  • Publication number: 20100006754
    Abstract: A method for analyzing a sample for the manufacture of integrated circuits, e.g., dynamic random access memory device, commonly called, DRAMS. The method also provides an integrated chip including a thickness, a width, and a length. In a specific embodiment, the integrated chip has at least one elongated structure through a portion of the thickness, while being normal to the width and the length. In a specific embodiment, the elongated structure has a structure width and a structure length that extends through a vertical portion of the thickness. The method includes removing a slice of the integrated circuit chip from a portion of the thickness in a directional manner normal to the structure length. In a specific embodiment, the slice is provided through an entirety of the one elongated structure along the structure length to cause a portion of a thickness of the slice providing the elongated structure to be of a substantially uniform sample thickness.
    Type: Application
    Filed: October 27, 2008
    Publication date: January 14, 2010
    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Qi Hua Zhang, Chorng Shyr Niou, Pan Liu, Ming Li