Patents by Inventor Qi Laura Ye

Qi Laura Ye has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Controlling pit formation in a III-nitride device
    Patent number: 9012250
    Abstract: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.
    Type: Grant
    Filed: April 17, 2012
    Date of Patent: April 21, 2015
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Sungsoo Yi, Nathan F. Gardner, Qi Laura Ye
  • Controlling Pit Formation in a III-Nitride Device
    Publication number: 20120205691
    Abstract: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.
    Type: Application
    Filed: April 17, 2012
    Publication date: August 16, 2012
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Sungsoo Yi, Nathan F. Gardner, Qi Laura Ye
  • Controlling pit formation in a III-nitride device
    Patent number: 8183577
    Abstract: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.
    Type: Grant
    Filed: June 30, 2009
    Date of Patent: May 22, 2012
    Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLC
    Inventors: Sungsoo Yi, Nathan F. Gardner, Qi Laura Ye
  • CONTROLLING PIT FORMATION IN A III-NITRIDE DEVICE
    Publication number: 20100327256
    Abstract: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.
    Type: Application
    Filed: June 30, 2009
    Publication date: December 30, 2010
    Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLC
    Inventors: Sungsoo YI, Nathan F. GARDNER, Qi Laura Ye
  • THERMOELECTRIC NANOWIRE COMPOSITES
    Publication number: 20080178921
    Abstract: An MOCVD process provides aligned p- and n- type nanowire arrays which are then filled with p- and n-type thermoelectric films to form the respective p-leg and n-leg of a thermoelectric device. The thermoelectric nanowire synthesis process is integrated with a photolithographic microfabrication process. The locations of the p- and n-type nanowire micro arrays are defined by photolithography. Metal contact pads at the bottom and top of these nanowire arrays which link the p- and n-type nanowires in series are defined and aligned by photolithography.
    Type: Application
    Filed: August 22, 2007
    Publication date: July 31, 2008
    Inventor: Qi Laura Ye