Abstract: A graphite wafer carrier for LED epitaxial wafer processes, having a plurality of wafer pocket profiles above the carrier for carrying the epitaxial wafer substrate. The inner edge of the wafer pocket profile is a concave step with a plurality of inward-extended support portions; and also has a graphite wafer carrier edge and an axle hole at the center of the graphite wafer carrier. The pocket profiles of different quantities and sizes can be arranged on the basis of different process parameters. The disclosed structure can reduce or eliminate airflow interference and improve the wafer edge yield.

Abstract: An LED epitaxial structure includes a substrate; a GaN nucleating layer; a superlattice buffer layer comprising a plurality pairs of alternately stacked AlGaN/n-GaN structures; an n-GaN layer; a MQW light-emitting layer, a p-GaN layer and a p-type contact layer. Al(n) represents Al composition value of the nth AlGaN/n-GaN superlattice buffer layer pair; N(n) represents n-type impurity concentration value of the nth AlGaN/n-GaN superlattice buffer layer pair; variation trend of Al(n) is from gradual increase to gradual decrease, and for N(n) is from gradual increase to gradual decrease.

Abstract: An LED epitaxial structure includes a substrate; a GaN nucleating layer; a superlattice buffer layer comprising a plurality pairs of alternately stacked AlGaN/n-GaN structures; an n-GaN layer; a MQW light-emitting layer, a p-GaN layer and a p-type contact layer. Al(n) represents Al composition value of the nth AlGaN/n-GaN superlattice buffer layer pair; N(n) represents n-type impurity concentration value of the nth AlGaN/n-GaN superlattice buffer layer pair; variation trend of Al(n) is from gradual increase to gradual decrease, and for N(n) is from gradual increase to gradual decrease.

Abstract: A graphite wafer carrier for LED epitaxial wafer processes, having a plurality of wafer pocket profiles above the carrier for carrying the epitaxial wafer substrate. The inner edge of the wafer pocket profile is a concave step with a plurality of inward-extended support portions; and also has a graphite wafer carrier edge and an axle hole at the center of the graphite wafer carrier. The pocket profiles of different quantities and sizes can be arranged on the basis of different process parameters. The disclosed structure can reduce or eliminate airflow interference and improve the wafer edge yield.

Abstract: Systems and methods provide for providing a plurality of information to a caller associated with a call to a service provider. The method includes: receiving, from the caller, the voice call to the service provider; determining that the voice call cannot be answered; responsive to the determination that the voice call cannot be answered, retrieving a first information from a web service associated with the service provider; and transmitting the first information to the caller.

Abstract: Systems and methods provide for providing a plurality of information to a caller associated with a call to a service provider. The method includes: receiving, from the caller, the voice call to the service provider; determining that the voice call cannot be answered; responsive to the determination that the voice call cannot be answered, retrieving a first information from a web service associated with the service provider; and transmitting the first information to the caller.