Patents by Inventor Qian Jiang ZHANG

Qian Jiang ZHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and fabrication method thereof
    Patent number: 11664227
    Abstract: A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes providing a to-be-etched layer; forming an initial mask layer over the to-be-etched layer; forming a patterned structure, on the initial mask layer and exposing a portion of the initial mask layer; forming a barrier layer on a sidewall surface of the patterned structure; using the patterned structure and the barrier layer as a mask, performing an ion doping process on the initial mask layer to form a doped region and an un-doped region between doped regions in the initial mask layer; removing the patterned structure and the barrier layer; and forming a mask layer on a top surface of the to-be-etched layer by removing the un-doped region. The mask layer includes a first opening exposing the top surface of the to-be-etched layer.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: May 30, 2023
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventors: Qian Jiang Zhang, Bo Su, Tao Dou, Lin Lin Sun
  • SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
    Publication number: 20210090890
    Abstract: A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes providing a to-be-etched layer; forming an initial mask layer over the to-be-etched layer; forming a patterned structure, on the initial mask layer and exposing a portion of the initial mask layer; forming a barrier layer on a sidewall surface of the patterned structure; using the patterned structure and the barrier layer as a mask, performing an ion doping process on the initial mask layer to form a doped region and an un-doped region between doped regions in the initial mask layer; removing the patterned structure and the barrier layer; and forming a mask layer on a top surface of the to-be-etched layer by removing the un-doped region. The mask layer includes a first opening exposing the top surface of the to-be-etched layer.
    Type: Application
    Filed: September 17, 2020
    Publication date: March 25, 2021
    Inventors: Qian Jiang ZHANG, Bo SU, Tao DOU, Lin Lin SUN