Abstract: An epitaxial structure, a light emitting diode (LED), and a method of manufacturing the epitaxial structure are provided. The epitaxial structure includes a P-type semiconductor layer, a light emitting region, and a N-type semiconductor layer stacked in sequence. A thickness of the P-type semiconductor layer 110 is less than or equal to 1.0 ?m. By limiting the overall thickness of the P-type semiconductor layer, the internal stress and the internal stress distribution of each sublayer are optimized. Stress accumulation is effectively reduced, and structural defects of the light emitting diode caused by stress release during packaging and use are reduced or eliminated. The light emitting brightness of the light emitting diode is thereby improved, and the service life of the light emitting diode is prolonged.

Abstract: A laser projection apparatus is provided and includes an optical modulating assembly, a vibrating device, a projection lens, and a circuit architecture. The circuit architecture includes an image processing sub-circuit and a display driving sub-circuit. The image processing sub-circuit is configured to perform frame division on image data of an image to be displayed to obtain image signals of a plurality of frames of sub-images to generate a frame division control signal. The display driving sub-circuit is configured to output the image signals of the plurality of frames of sub-images to the optical modulating assembly and output a vibration instruction to the vibrating device based on the output timing of the image signals of the plurality of frames of sub-images, so as to control the vibrating device to perform vibrations, so that the projection beams are output through the vibrating device.

Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface. The semiconductor epitaxial structure includes a first-type semiconductor layered unit, an active layer, and a second-type semiconductor layered unit sequentially disposed in such order in a direction from the first surface to the second surface. The active layer includes quantum well layers and quantum barrier layers stacked alternately, each of the quantum well layers includes a material that is represented by InxGa1-xAs, and each of the quantum barrier layers includes a material that is represented by GaAs1-yPy, where 0.2?x?0.3, and 0?y?y0.05.

Abstract: The invention discloses a light-emitting diode and a light-emitting device. The light-emitting diode includes a semiconductor epitaxial stack having first and second surfaces opposite to each other and including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer stacked in sequence in a direction from the first surface to the second surface. The active layer includes n periods of quantum well structure, and each period of quantum well structure includes a well layer and a barrier layer deposited sequentially. A first spacer layer is disposed between the first-type semiconductor layer and the active layer, and a ratio of a thickness (nm) of the first spacer layer to a current density (A/cm2) of the light-emitting diode ranges from 0 to 10. In the invention, the thickness of the first spacer layer is adjusted according to the current density of the light-emitting diode to improve the luminous efficiency of the light-emitting diode.

Abstract: An MPI reconstruction method, device, and system based on a RecNet model include obtaining a one-dimensional (1D) MPI signal on which imaging reconstruction is to be performed, taking the 1D MPI signal as an input signal, and inputting the input signal and a velocity signal of an FFP corresponding to the input signal into a trained magnetic particle reconstruction model RecNet for image reconstruction to obtain a two-dimensional (2D) MPI image, where the magnetic particle reconstruction model RecNet is constructed based on a domain conversion network and an improved UNet network. The MPI reconstruction method, device, and system obtain a high-quality and clear magnetic particle distribution image without obtaining the system matrix.

Abstract: An MPI reconstruction method, device, and system based on a RecNet model include obtaining a one-dimensional (1D) MPI signal on which imaging reconstruction is to be performed, taking the 1D MPI signal as an input signal, and inputting the input signal and a velocity signal of an FFP corresponding to the input signal into a trained magnetic particle reconstruction model RecNet for image reconstruction to obtain a two-dimensional (2D) MPI image, where the magnetic particle reconstruction model RecNet is constructed based on a domain conversion network and an improved UNet network. The MPI reconstruction method, device, and system obtain a high-quality and clear magnetic particle distribution image without obtaining the system matrix.

Abstract: A sensor authentication registration system includes: sensors for detecting a state quantity of a sensing target device; and setting device that stores installation information for each of the sensors. A radio wave intensity measurement unit that measures intensity of a radio wave in wireless communication is provided to at least one of the sensors or the setting device. The setting device can perform an authentication operation to store the installation information when the presence of a sensor, the installation information of which is not stored, is detected and the radio wave intensity is equal to or higher than a threshold value. A data collection system includes: sensors; and data collection device that stores installation information for each of the sensors and receives state quantities detected by the sensors via wireless communication.

Abstract: The invention provides novel compositions and methods for the treatment of Radiation-Induced Bystander Effects (RIBE), resulting from radiation exposure. In one preferred embodiment the inventions includes novel therapeutic agents, including but not limited to quercetin and quercetin analogs, as well as E64, CA074, CA074Me, that interfere with the activity of Cathepsin B.

Abstract: A light-emitting diode includes a semiconductor epitaxial structure that has a first current spreading layer, a first transition layer, a first cladding layer, a second transition layer, a first confinement layer, an active layer, a second confinement layer, a second cladding layer, and a second current spreading layer. The first current spreading layer, the first cladding layer, and the first confinement layer independently have semiconductor materials that are different in an aluminum content. An aluminum content of the first transition layer increases in a direction from the first current spreading layer to the first cladding layer. An aluminum content of the second transition layer decreases in a direction from the first cladding layer to the first confinement layer.

Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface, and that includes a first current spreading layer, a Inx1Ga1-x1As layer, a first cladding layer, an active layer and a second cladding layer disposed sequentially in such order from the first surface to the second surface, wherein, in the Inx1Ga1-x1As layer, 0<x1?0.08. In another aspect of the disclosure, the first current spreading layer is made of gallium arsenide, and has a thickness ranging from 2 ?m to 10 ?m and a doping concentration ranging from 1E17/cm3 to 4E18/cm3. In yet another aspect of the disclosure, a layered stack is disposed between the first current spreading layer and the first cladding layer, and includes an Inx3Ga1-x3As layer and an Aly3Ga1-y3AszP1-z layer, in which 0.02<x3?0.20, 0?y3?0.25, and 0.7<z?0.95.

Abstract: A light-emitting epitaxial structure includes an n-type ohmic contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, a p-type GaInP transition layer, a p-type AlxGa(1-x)InP transition unit and a p-type GaP ohmic contact layer that are sequentially disposed in such order, wherein in the p-type AlxGa(1-x)InP transition unit, 0<x?0.7. An infrared light-emitting diode including the aforementioned light-emitting epitaxial structure and a method for manufacturing the light-emitting epitaxial structure are also disclosed.

Abstract: A flow control and processing cartridge includes a cartridge body and a reaction chip. The cartridge body includes plural first chambers and plural first channels for storing and processing at least one of a sample, a reagent and a buffer and configured to perform nucleic acid extraction. The reaction chip is in conjunction with the cartridge body and includes plural second chambers and plural second channels configured to store and process an amplification reaction solution, and at least two fluidic networks configured to perform nucleic acid amplification and detection. One of the fluidic networks includes plural detection wells, a main fluid channel connected with the detection wells and configured to dispense the sample or control liquids into the detection wells, and a gas releasing channel connected with the detection wells and configured to release gas from the detection wells, wherein one of the fluidic networks is configured for quality control.

Abstract: The invention provides novel compositions and methods for the treatment of Radiation-Induced Bystander Effects (RIBE), resulting from radiation exposure. In one preferred embodiment the inventions includes novel therapeutic agents, including but not limited to quercetin and quercetin analogs, as well as E64, CA074, CA074Me, that interfere with the activity of Cathepsin B.

Abstract: A nucleic acid analysis apparatus includes a casing, a main frame, a fluid delivery unit, a thermal unit, a driving unit, and at least one optical unit. The casing has an upper casing and a lower casing. The main frame is disposed in the lower casing and has a chamber for mounting a cartridge therein. The fluid delivery unit is adapted to transport reagents within the cartridge for sample purification and/or nucleic acid extraction. The thermal unit is adapted to provide a predefined temperature for nucleic acid amplification. The driving unit is disposed in the lower casing and connected with the main frame, and includes a motion control unit capable of pressing the cartridge during sample purification and/or nucleic acid extraction and rotating the cartridge with a predefined program during nucleic acid amplification and/or detection. The optical unit includes plural optical components for detection.

Abstract: A flow control and processing cartridge used in a nucleic acid analysis apparatus includes a cartridge body and a reaction chip. The cartridge body includes plural chambers for storing at least one sample and plural biochemical reagents and buffers, and plural channels connected with the plural chambers. The reaction chip is in conjunction with the cartridge body and includes plural detection wells, at least one main fluid channel connected with the detection wells and adapted to dispense the sample into the detection wells, and at least one gas releasing channel connected with the detection wells and adapted to release gas from the detection wells.

Abstract: A nucleic acid analysis apparatus with isothermal based amplification includes a chamber, a fluid delivery unit, a thermal unit, a rotational driven unit and at least one optical unit. The chamber includes a cartridge mounted therein. The fluid delivery unit is connected with the chamber and adapted to transport reagents within the cartridge for sample purification and/or nucleic acid extraction. The thermal unit is disposed in the chamber and adapted to provide a predefined temperature for nucleic acid amplification. The rotational driven unit is connected with the chamber and comprises a motion control unit, wherein the motion control unit is capable of pressing the cartridge during sample purification and/or nucleic acid extraction and rotating the cartridge with a predefined program during nucleic acid amplification and/or detection. The at least one optical unit is disposed on the chamber and includes plural optical components for detection.

Abstract: A microscale sampling device including a frame is provided in the present invention, a sample container, a communicating channel and a resistance channel are defined in the frame. At least one sampling chamber is defined in the communicating channel. An end of the communicating channel is communicated with the sample container and the communicating channel is arranged below the sample container. An end of the resistance channel is communicated with the sampling chamber, and the other end of the resistance channel is communicated to an output joint. The resistance channel is shaped with at least one discontinuous shape change.

Abstract: The invention provides novel compositions and methods for the treatment of Radiation-Induced Bystander Effects (RIBE), resulting from radiation exposure. In one preferred embodiment the inventions includes novel therapeutic agents, including but not limited to quercetin and quercetin analogs, as well as E64, CA074, CA074Me, that interfere with the activity of Cathepsin B.