Abstract: A memory device includes a first cell above a substrate, a first line connected to the first cell, a second cell above the first cell connected with the first cell, a second line connected to the second cell, a third cell above the second cell connected with the second cell, a third line connected to the third cell, a fourth cell above the third cell connected with the third cell, a fourth line connected to the fourth cell, and a driver applying voltages to the lines when data is written to a cell in a write operation. To write data to the second cell, the driver applies a write voltage to the second line, applies a first voltage lower than the write voltage to the first line, and applies a second voltage higher than the first voltage and lower than the write voltage to the third and fourth lines.

Abstract: A memory device includes a first cell above a substrate, a first line connected to the first cell, a second cell above the first cell connected with the first cell, a second line connected to the second cell, a third cell above the second cell connected with the second cell, a third line connected to the third cell, a fourth cell above the third cell connected with the third cell, a fourth line connected to the fourth cell, and a driver applying voltages to the lines when data is written to a cell in a write operation. To write data to the second cell, the driver applies a write voltage to the second line, applies a first voltage lower than the write voltage to the first line, and applies a second voltage higher than the first voltage and lower than the write voltage to the third and fourth lines.

Abstract: A memory device includes a first cell above a substrate, a first line connected to the first cell, a second cell above the first cell connected with the first cell, a second line connected to the second cell, a third cell above the second cell connected with the second cell, a third line connected to the third cell, a fourth cell above the third cell connected with the third cell, a fourth line connected to the fourth cell, and a driver applying voltages to the lines when data is written to a cell in a write operation. To write data to the second cell, the driver applies a write voltage to the second line, applies a first voltage lower than the write voltage to the first line, and applies a second voltage higher than the first voltage and lower than the write voltage to the third and fourth lines.

Abstract: A memory device includes a first cell above a substrate, a first line connected to the first cell, a second cell above the first cell connected with the first cell, a second line connected to the second cell, a third cell above the second cell connected with the second cell, a third line connected to the third cell, a fourth cell above the third cell connected with the third cell, a fourth line connected to the fourth cell, and a driver applying voltages to the lines when data is written to a cell in a write operation. To write data to the second cell, the driver applies a write voltage to the second line, applies a first voltage lower than the write voltage to the first line, and applies a second voltage higher than the first voltage and lower than the write voltage to the third and fourth lines.

Abstract: An exenatide-containing composition is in the form of microspheres, which are prepared by using exenatide acetate and polylactic-co-glycolic acid (PLGA) as raw materials, and the content of acetic acid in the prepared composition is lower than 0.01%. A method for preparing the exenatide-containing microspheres includes selecting a cleaning fluid of a proper external water phase and a proper amount to clean microspheres, and selecting a proper re-drying temperature to cure the microspheres after the microspheres are freeze-dried.

Abstract: An exenatide-containing composition is in the form of microspheres, which are prepared by using exenatide acetate and polylactic-co-glycolic acid (PLGA) as raw materials, and the content of acetic acid in the prepared composition is lower than 0.01%. A method for preparing the exenatide-containing microspheres includes selecting a cleaning fluid of a proper external water Phase and a proper amount to clean microspheres, and selecting a proper re-drying temperature to cure the after the microspheres are freeze dried.

Abstract: Provided are a method and device for coordinating interference in an (LTE) system, and relates to the technical field of mobile communication. The method includes the following steps that: a maximum number of RBs to be scheduled in a current TTI of the cell is calculated according to a mean number of RBs scheduled in each TTI of the cell; the number of RBs is allocated, according to the maximum number of RBs, to each piece of UE needing to be scheduled in the current TTI of the cell; and RB positions are start to be allocated to each piece of UE of the cell in a manner that the RB positions allocated to UEs of the cell are different from or not completely the same as RB positions allocated to UEs of a neighbouring cell after the number of RBs is allocated to each piece of UE.