Abstract: The invention belongs to the field of genetic engineering technology and application thereof, and in order to solve the problems of lack of high efficient TMV-resistant RNAi nano-preparation at present, complicated preparation process of medicament, poor stability and delivery efficiency of dsRNA, the invention provides an RNAi nano-preparation, preparation method thereof and application thereof in TMV prevention and control. The RNAi nano-preparation is prepared from dsRNA and chitosan nano materials, wherein, dsRNA is a highly TMV-resistant RdRP3 gene with a length of 313 bp obtained from screening, with nucleotide sequence shown in SEQ ID NO.1, and the volume ratio of the chitosan to 1 ?g/?l dsRNA is 10:(1-6).

Abstract: The present invention belongs to the technical field of application of microbial secondary metabolites, and particularly relates to novel use of prodigiosin in resisting potato virus Y. Application of prodigiosin in preparing a medicine for preventing and controlling potato virus Y. The medicine for preventing and controlling the potyvirus is a liquid or solid preparation containing prodigiosin. It is clarified that PVY promotes its own replication and infection by recruiting host factor Hsp70 in the process of infecting the host, realizing virus infection and spread. Hsp70 plays an important role in the infection and replication of plant viruses. Based on the above results, it is further clarified that prodigiosin treatment can significantly increase the ubiquitination level of the plant host, promote the ubiquitination of HSP70 protein of the host, degrade or inhibit the expression of Hsp70 protein, activate the natural immune activity of the host plant.

Abstract: Structures for a corner area of a chip and methods of fabricating a structure for a corner area of a chip. A chip includes an active circuit region, an integrated circuit in the active circuit region, and a corner area. The corner area includes dummy structures that provide dummy fill.

Abstract: The present invention belongs to the technical field of application of microbial secondary metabolites, and particularly relates to novel use of prodigiosin in resisting potato virus Y. Application of prodigiosin in preparing a medicine for preventing and controlling potato virus Y. The medicine for preventing and controlling the potyvirus is a liquid or solid preparation containing prodigiosin. It is clarified that PVY promotes its own replication and infection by recruiting host factor Hsp70 in the process of infecting the host, realizing virus infection and spread. Hsp70 plays an important role in the infection and replication of plant viruses. Based on the above results, it is further clarified that prodigiosin treatment can significantly increase the ubiquitination level of the plant host, promote the ubiquitination of HSP70 protein of the host, degrade or inhibit the expression of Hsp70 protein, activate the natural immune activity of the host plant.

Abstract: The invention belongs to the field of genetic engineering technology and application thereof, and in order to solve the problems of lack of high efficient TMV-resistant RNAi nano-preparation at present, complicated preparation process of medicament, poor stability and delivery efficiency of dsRNA, the invention provides an RNAi nano-preparation, preparation method thereof and application thereof in TMV prevention and control. The RNAi nano-preparation is prepared from dsRNA and chitosan nano materials, wherein, dsRNA is a highly TMV-resistant RdRP3 gene with a length of 313 bp obtained from screening, with nucleotide sequence shown in SEQ ID NO.1, and the volume ratio of the chitosan to 1 ?g/?l dsRNA is 10:(1-6).

Abstract: A method of manufacturing a semiconductor device includes providing a substrate, forming a gate structure including a metal gate on the substrate, forming an interlayer dielectric layer on the gate structure, forming a first contact hole extending through the interlayer dielectric layer to expose a surface of the metal gate, and removing a portion of the metal gate using a wet etching process to form a second contact hole having a cross-sectional size larger than a cross-sectional size of the first contact hole.

Abstract: Structures for a corner area of a chip and methods of fabricating a structure for a corner area of a chip. A chip includes an active circuit region, an integrated circuit in the active circuit region, and a corner area. The corner area includes dummy structures that provide dummy fill.

Abstract: A method of manufacturing a semiconductor device includes providing a substrate, forming a gate structure including a metal gate on the substrate, forming an interlayer dielectric layer on the gate structure, forming a first contact hole extending through the interlayer dielectric layer to expose a surface of the metal gate, and removing a portion of the metal gate using a wet etching process to form a second contact hole having a cross-sectional size larger than a cross-sectional size of the first contact hole.

Abstract: A semiconductor device includes a substrate, a gate structure having a metal gate on the substrate, and a contact member extending into the metal gate. The contact member includes a first region on the metal gate and a second region on the first region. The first region has a cross-sectional size larger than a cross-sectional size of the second region. The semiconductor device has a reduced contact resistance between the contact member and the metal gate.

Abstract: Provided are a WIFI power supply switching method, circuit and apparatus, and a storage medium. The method includes: when it is detected that a terminal is disconnected from an external power supply circuit, detecting a main current from a battery to a main board of the terminal and determining whether the main current goes beyond a first pre-set threshold value, wherein the battery supplies power for a WIFI PA of a first frequency band and a WIFI PA of a second frequency band in the terminal; and when it is determined that the main current goes beyond the first pre-set threshold value, ending the power supply of the battery for the WIFI PA of the first frequency band.

Abstract: A semiconductor device includes a substrate, a gate structure having a metal gate on the substrate, and a contact member extending into the metal gate. The contact member includes a first region on the metal gate and a second region on the first region. The first region has a cross-sectional size larger than a cross-sectional size of the second region. The semiconductor device has a reduced contact resistance between the contact member and the metal gate.

Abstract: An LED illuminating device includes a base, an LED substrate mounted on the base, at least one LED on the substrate and an envelope fixed on the base. The envelope includes a plurality of transmission regions and a plurality of reflective regions. The lights beams emitted by the LED reaches the envelope. A first portion of the light beams reaching transmission regions can pass therethough. A second portion of the light beams are internally reflected in multiple times by the reflective regions until they finally escape to outside through the transmission regions. The direction of the light beams can reach various locations of each of the transmission regions at various angles.

Abstract: An LED illuminating device includes a base, an LED substrate mounted on the base, at least one LED on the substrate and an envelope fixed on the base. The envelope includes a plurality of transmission regions and a plurality of reflective regions. The lights beams emitted by the LED reaches the envelope. A first portion of the light beams reaching transmission regions can pass therethough. A second portion of the light beams are internally reflected in multiple times by the reflective regions until they finally escape to outside through the transmission regions. The direction of the light beams can reach various locations of each of the transmission regions at various angles.