Abstract: To detect the peaks level of an incoming signal, the difference between the voltage level of the incoming signal and a voltage developed across a capacitor is amplified. The amplified difference signal is applied to a transconductor adapted to vary its output current in response to changes in the amplified difference signal. The variations in the current generated by the transconductor are used to change a current flowing through a current mirror that charges the capacitor. The voltage developed across the capacitor represents the detected peak. The capacitor is discharged to a predefined voltage level during the reset periods. A second amplifier receiving the capacitor voltage is optionally used to develop a voltage across a second capacitor that is not reset and thus carries only the detected peak levels.

Abstract: An LED safety lamp includes a cover, a heat-conductive plate thermally attached to and mounted on the cover, a heat sink thermally attached to and mounted on the heat-conductive plate, a plurality of LED modules attached to the heat sink, a transparent housing enclosing the heat sink and the LED modules and hermetically secured to the cover. The cover includes a hollow tube, a flameproof connector and a flexible component received in the hollow tube. The flexile component is depressed by the connector to expand thereby to seal the hollow tube and fix the electrical wires extending through the flexible component in position, thereby providing an excellent airproof effectiveness to the LED lamp.

Abstract: A charge diffusion crosstalk reduction process is provided for image signals from, for example, a CMOS image sensor. Charge diffusion crosstalk processing can be used in accordance with aspects of the present invention to reduce charge diffusion crosstalk caused by electrons migrating from adjacent pixels. Crosstalk effects can be determined by color gain and color offset. By adjusting the color gain and color offset, crosstalk can be cancelled to the first order. Charge diffusion crosstalk processing in accordance with aspects of the present invention can be relatively easily integrated with color correction processing during the post processing of image sensors. Color correction and cross talk cancellation processing can use the same circuitry as previously used before by color correction process only. The input coefficients for color correction and cross talk cancellation processing can be determined from the results of the multiplication of color correction matrix C and crosstalk cancellation matrix K?1.

Abstract: Differential peak detection for outputting a signal indicative of a peak value of an input signal. The input signal is differentially amplified using common mode feedback and a common mode output is thereby output, wherein common mode level of the common mode output is substantially the same as a common mode voltage. The common mode output of such differential amplification is coupled to an input of a first common source input pair, and the common mode voltage and a feedback from the output signal across a sampling capacitor is coupled to an input of a second common source input pair. A summation of respective outputs of the first and second common source input pairs is coupled to an input of a transconductance stage, wherein an output of the transconductance stage controls charging of the sampling capacitor. In this manner, a more accurate output signal is provided.

Abstract: Methods and circuits for performing high-speed, high-resolution signal comparisons using offset cancellation, reduction of charge injection noise, and sharing of coupling capacitors between circuit stages. A multistage comparator circuit includes first and second preamplifiers electrically coupled to each other through series connections including coupling capacitors. A latch for storing the comparison output signal is electrically coupled to the output of the second preamplifier. The multistage comparator operates such that the offset voltages of the first preamplifier and of the second preamplifier and latch are stored on the coupling capacitors before performing comparisons.

Abstract: A time domain sampling technique for a CMOS imager enables a wide dynamic range and flexibility by employing up to two-degrees of freedom during such sampling. Two degrees of freedom can be achieved by making one or both of an integration time and a reference (e.g., voltage or current) variable during sampling. The sampling (or image capture) is implemented by associating a time with when a pixel has a desired value relative to the reference in response to the pixel receiving incident light. The reference can be fixed or variable during different portions of the sampling, and further can be programmable to implement a desired sampling pattern for a given application.

Abstract: The electrical cross talk in color solid-state image sensor is estimated or characterized by acquiring image data from an array of imaging cells which is a portion of a much larger array, extracting cross talk data from the acquired image data, and characterizing the cross talk based on the extracted coefficients.

Abstract: A horizontal scan circuit comprises a column selector and a plurality of block selectors. A column selector is used to address particular columns of pixels within blocks. A block selector is used to select a particular block and to select the particular columns of the selected block that are addressed by the column selector. Each block selector typically comprises a single D-type flip-flop that is associated with a block of pixel columns. The block selectors are arranged such that the blocks can be scanned from left-to-right or right-to-left. The column selector comprises an asynchronous counter and a decoder that are further arranged to provide sub-sampling and horizontal adding functions. The use of block and column selectors reduces the number of relatively large D-type flip-flops (which conserves die area) and reduces the parasitic capacitance associated with the otherwise required relatively large number of inputs of the column selection circuit drivers.

Abstract: A low dark current CMOS image sensor pixel comprises a photodiode that is isolated from the field oxide by forming a relatively small photodiode within a relatively large active area such that the field oxide is substantially separated from the photodiode. The active area should be large enough such that the photodiode depletion region formed during operation of the photodiode does not touch the field oxide sidewall and corner. The isolation of the photodiode from the field oxide significantly reduces the number of dislocations near the field oxide that contribute to the dark current. Accordingly, the isolation of the photodiode from the field oxide dramatically reduces the dark current of the photodiode during operation. The present invention can be formed with a conventional CMOS process without adding any additional process steps.

Abstract: An imaging architecture is provided employing CMOS imaging sensors. The imaging architecture utilizes time domain sampling techniques to extract image data from a photodiode (PD) pixel array. The CMOS imaging architecture associates time index values with firing of CMOS imaging sensors in response to a capture of an image. The time index values correspond to the brightness of the illumination received by the CMOS imaging sensor. The time index value associated with the firing of the CMOS imaging sensor can be stored and employed in reconstruction of the image. The imaging architecture includes systems and methods for reading and compressing imaging data extracted from the PD pixel array.

Abstract: An array of active pixel sensor cells is operated to substantially reduce the gate induced drain leakage (GIDL) current component of the dark current. In addition, the array is tested to determine the number of cells in the array that are bad, and discards the array of active pixel sensor cells when the number of bad cells exceeds a predefined limit.

Abstract: A low dark current CMOS image sensor pixel comprises a photodiode that is isolated from the field oxide by forming a relatively small photodiode within a relatively large active area such that the field oxide is substantially separated from the photodiode. The active area should be large enough such that the photodiode depletion region formed during operation of the photodiode does not touch the field oxide sidewall and corner. The isolation of the photodiode from the field oxide significantly reduces the number of dislocations near the field oxide that contribute to the dark current. Accordingly, the isolation of the photodiode from the field oxide dramatically reduces the dark current of the photodiode during operation. The present invention can be formed with a conventional CMOS process without adding any additional process steps.

Abstract: An imaging architecture is provided employing CMOS imaging sensors. The imaging architecture utilizes time domain sampling techniques to extract image data from a photodiode (PD) pixel array. The CMOS imaging architecture associates time index values with firing of CMOS imaging sensors in response to a capture of an image. The time index values correspond to the brightness of the illumination received by the CMOS imaging sensor. The time index value associated with the firing of the CMOS imaging sensor can be stored and employed in reconstruction of the image. The imaging architecture includes systems and methods for reading and compressing imaging data extracted from the PD pixel array.

Abstract: A time domain sampling technique for a CMOS imager enables a wide dynamic range and flexibility by employing up to two-degrees of freedom during such sampling. Two degrees of freedom can be achieved by making one or both of an integration time and a reference (e.g., voltage or current) variable during sampling. The sampling (or image capture) is implemented by associating a time with when a pixel has a desired value relative to the reference in response to the pixel receiving incident light. The reference can be fixed or variable during different portions of the sampling, and further can be programmable to implement a desired sampling pattern for a given application.