Patents by Inventor Qiang Rui
Qiang Rui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240088273Abstract: A vertical semiconductor structure with an integrated sampling structure and a method for manufacturing the same; the vertical semiconductor structure includes a vertical-semiconductor-structure unit cell, a sampling unit cell, a control electrode, a first electrode, a second electrode, and a sampling electrode. The sampling electrode performs real-time sampling of a voltage difference between the first electrode and the second electrode; a PN junction is formed between a first/second P-type diffusion region and a second N-type base region, which forms a potential barrier blocking electron emission from the sampling electrode. Therefore, a voltage signal of the sampling electrode is input into a protection circuit, which detects whether the vertical-semiconductor-structure unit cell is desaturated when it determines that the unit cell is in the open state. Second, a sampling resistor is connected between the sampling electrode and the first electrode to ensure the stable operation of the sampling unit cell.Type: ApplicationFiled: May 20, 2022Publication date: March 14, 2024Applicant: WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.Inventors: PENGFEI JIA, QIANG RUI, WEI LI
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Patent number: 10096699Abstract: A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method therefor. The transistor comprises a terminal structure (200) and an active region (100). An underlayment of the field-stop reverse conducting insulated gate bipolar transistor is an N-type underlayment, the back surface of the underlayment is provided with an N-type electric field stop layer (1), one surface of the electric field stop layer departing from the underlayment is provided with a back-surface P-type structure (10), and the surface of the back-surface P-type structure is provided with a back-surface metal layer (12). A plurality of notches (11) which penetrate through the back-surface P-type structure (10) from the back-surface metal layer (12) to the electric field stop layer (1) are formed in the active region (100), and metals of the back-surface metal layer (12) are filled into the notches (11) to form a metal structure which extends into the electric field stop layer (1).Type: GrantFiled: June 5, 2014Date of Patent: October 9, 2018Assignee: CSMC Technologies Fab1 Co., Ltd.Inventors: Shuo Zhang, Qiang Rui, Genyi Wang, Xiaoshe Deng
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Patent number: 9673193Abstract: A manufacturing method for reverse conducting insulated gate bipolar transistor, the manufacturing method is characterized by the use of polysilicon for filling in grooves on the back of a reverse conducting insulated gate bipolar transistor. The parameters of reverse conducting diodes on the back of the reverse conducting insulated gate bipolar transistor can be controlled simply by controlling the doping concentration of the polysilicon accurately, indicating relatively low requirements for process control. The reverse conducting insulated gate bipolar transistor manufacturing method is relatively low in requirements for process control and relatively small in manufacturing difficulty.Type: GrantFiled: August 19, 2014Date of Patent: June 6, 2017Assignee: CSMC TECHNOLOGIES FAB1 CO., LTD.Inventors: Shuo Zhang, Qiang Rui, Genyi Wang, Xiaoshe Deng
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Patent number: 9666682Abstract: A reverse conducting insulated gate bipolar transistor (IGBT) manufacturing method, comprising the following steps: providing a substrate having an IGBT structure formed on the front surface thereof; implanting P+ ions onto the back surface of the substrate; forming a channel on the back surface of the substrate through photolithography and etching processes; planarizing the back surface of the substrate through a laser scanning process to form P-type and N-type interval structures; and forming a back surface collector by conducting a back metalizing process on the back surface of the substrate. Laser scanning process can process only the back surface structure requiring annealing, thus solve the problem of the front surface structure of the reverse conducting IGBT restricting back surface annealing to a low temperature, improving the P-type and N-type impurity activation efficiency in the back surface structure of the reverse conducting IGBT, and enhancing the performance of the reverse conducting IGBT.Type: GrantFiled: September 2, 2014Date of Patent: May 30, 2017Assignee: CSMC TECHNOLOGIES FAB1 CO., LTD.Inventors: Wanli Wang, Xiaoshe Deng, Genyi Wang, Qiang Rui
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Patent number: 9620615Abstract: An insulated gate bipolar transistor (IGBT) manufacturing method comprises the following steps: providing a semiconductor substrate of a first conducting type, the semiconductor substrate having a first major surface and a second major surface (100); forming a field-stop layer of a second conducting type on the first major surface of the semiconductor substrate (200); growing an oxide layer on the field-stop layer (300); removing the oxide layer from the field-stop layer (400); forming an epitaxial layer on the field-stop layer from which the oxide layer has been removed; and then manufacturing an IGBT on the epitaxial layer (600). Before regular manufacturing of an IGBT, the surface defects of a substrate material are eliminated as many as possible before epitaxy is formed, and the quality of an epitaxial layer is improved, thereby improving the quality of the whole IGBT.Type: GrantFiled: July 29, 2014Date of Patent: April 11, 2017Assignee: CSMC TECHNOLOGIES FAB1 CO., LTD.Inventors: Xiaoshe Deng, Qiang Rui, Shuo Zhang, Genyi Wang
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Patent number: 9607851Abstract: Disclosed is a method for removing a polysilicon protection layer (12) on a back face of an IGBT having a field stop structure (10). The method comprises thermally oxidizing the polysilicon protection layer (12) on the back face of the IGBT until the oxidation is terminated on a gate oxide layer (11) located above the polysilicon protection layer (12) to form a silicon dioxide layer (13), and removing the formed silicon dioxide layer (13) and the gate oxide layer (11) by a dry etching process. The method for removing the protection layer is easier to control.Type: GrantFiled: July 25, 2013Date of Patent: March 28, 2017Assignee: CMSC TECHNOLOGIES FAB1 CO., LTD.Inventors: Qiang Rui, Shuo Zhang, Genyi Wang, Xiaoshe Deng
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Patent number: 9595520Abstract: An insulated gate bipolar translator (IGBT) with a built-in diode and a manufacturing method thereof are provided.Type: GrantFiled: June 9, 2014Date of Patent: March 14, 2017Assignee: CSMC TECHNOLOGIES FAB1 CO., LTD.Inventors: Xiaoshe Deng, Shuo Zhang, Qiang Rui, Genyi Wang
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Publication number: 20160379974Abstract: A manufacturing method for reverse conducting insulated gate bipolar transistor, the manufacturing method is characterized by the use of polysilicon for filling in grooves on the back of a reverse conducting insulated gate bipolar transistor. The parameters of reverse conducting diodes on the back of the reverse conducting insulated gate bipolar transistor can be controlled simply by controlling the doping concentration of the polysilicon accurately, indicating relatively low requirements for process control. The reverse conducting insulated gate bipolar transistor manufacturing method is relatively low in requirements for process control and relatively small in manufacturing difficulty.Type: ApplicationFiled: August 19, 2014Publication date: December 29, 2016Applicant: CSMC Technologies FAB1 Co., Ltd.Inventors: Shuo ZHANG, Qiang RUI, Genyi WANG, Xiaoshe DENG
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Publication number: 20160380071Abstract: An insulated gate bipolar transistor (IGBT) manufacturing method comprises the following steps: providing a semiconductor substrate of a first conducting type, the semiconductor substrate having a first major surface and a second major surface (100); forming a field-stop layer of a second conducting type on the first major surface of the semiconductor substrate (200); growing an oxide layer on the field-stop layer (300); removing the oxide layer from the field-stop layer (400); forming an epitaxial layer on the field-stop layer from which the oxide layer has been removed; and then manufacturing an IGBT on the epitaxial layer (600). Before regular manufacturing of an IGBT, the surface defects of a substrate material are eliminated as many as possible before epitaxy is formed, and the quality of an epitaxial layer is improved, thereby improving the quality of the whole IGBT.Type: ApplicationFiled: July 29, 2014Publication date: December 29, 2016Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.Inventors: Xiaoshe DENG, Qiang RUI, Shuo ZHANG, Genyi WANG
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Publication number: 20160372571Abstract: A reverse conducting insulated gate bipolar transistor (IGBT) manufacturing method, comprising the following steps: providing a substrate having an IGBT structure formed on the front surface thereof; implanting P+ ions onto the back surface of the substrate; forming a channel on the back surface of the substrate through photolithography and etching processes; planarizing the back surface of the substrate through a laser scanning process to form P-type and N-type interval structures; and forming a back surface collector by conducting a back metalizing process on the back surface of the substrate. Laser scanning process can process only the back surface structure requiring annealing, thus solve the problem of the front surface structure of the reverse conducting IGBT restricting back surface annealing to a low temperature, improving the P-type and N-type impurity activation efficiency in the back surface structure of the reverse conducting IGBT, and enhancing the performance of the reverse conducting IGBT.Type: ApplicationFiled: September 2, 2014Publication date: December 22, 2016Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.Inventors: Wanli Wang, Xiaoshe DENG, Genyi WANG, Qiang RUI
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Patent number: 9443926Abstract: A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method thereof. The transistor comprises a terminal structure (200) and an active region (100). An underlayment of the field-stop reverse conducting insulated gate bipolar transistor is an N-type underlayment, the back surface of the underlayment is provided with an N-type electric field stop layer (1), one surface of the electric field stop layer (1) departing from the underlayment is provided with a back-surface P-type structure (10), and the surface of the back-surface P-type structure (10) is provided with a back-surface metal layer (12). A plurality of polysilicon filling structures (11) which penetrate into the electric field stop layer (1) from the back-surface P-type structure (10) are formed in the active region (100).Type: GrantFiled: June 6, 2014Date of Patent: September 13, 2016Assignee: CSMC TECHNOLOGIES FAB1 CO., LTD.Inventors: Shuo Zhang, Qiang Rui, Xiaoshe Deng, Genyi Wang
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Publication number: 20160240608Abstract: A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method thereof. The transistor comprises a terminal structure (200) and an active region (100). An underlayment of the field-stop reverse conducting insulated gate bipolar transistor is an N-type underlayment, the back surface of the underlayment is provided with an N-type electric field stop layer (1), one surface of the electric field stop layer (1) departing from the underlayment is provided with a back-surface P-type structure (10), and the surface of the back-surface P-type structure (10) is provided with a back-surface metal layer (12). A plurality of polysilicon filling structures (11) which penetrate into the electric field stop layer (1) from the back-surface P-type structure (10) are formed in the active region (100).Type: ApplicationFiled: June 6, 2014Publication date: August 18, 2016Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.Inventors: Shuo ZHANG, Qiang RUI, Xiaoshe DENG, Genyi WANG
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Publication number: 20160240528Abstract: An insulated gate bipolar translator (IGBT) with a built-in diode and a manufacturing method thereof are provided.Type: ApplicationFiled: June 9, 2014Publication date: August 18, 2016Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.Inventors: Xiaoshe DENG, Shuo ZHANG, Qiang RUI, Genyi WANG
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Publication number: 20160163841Abstract: A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method therefor. The transistor comprises a terminal structure (200) and an active region (100). An underlayment of the field-stop reverse conducting insulated gate bipolar transistor is an N-type underlayment, the back surface of the underlayment is provided with an N-type electric field stop layer (1), one surface of the electric field stop layer departing from the underlayment is provided with a back-surface P-type structure (10), and the surface of the back-surface P-type structure is provided with a back-surface metal layer (12). A plurality of notches (11) which penetrate through the back-surface P-type structure (10) from the back-surface metal layer (12) to the electric field stop layer (1) are formed in the active region (100), and metals of the back-surface metal layer (12) are filled into the notches (11) to form a metal structure which extends into the electric field stop layer (1).Type: ApplicationFiled: June 5, 2014Publication date: June 9, 2016Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.Inventors: Shuo ZHANG, Qiang RUI, Genyi WANG, Xiaoshe DENG
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Publication number: 20150155182Abstract: Disclosed is a method for removing a polysilicon protection layer (12) on a back face of an IGBT having a field stop structure (10). The method comprises thermally oxidizing the polysilicon protection layer (12) on the back face of the IGBT until the oxidation is terminated on a gate oxide layer (11) located above the polysilicon protection layer (12) to form a silicon dioxide layer (13), and removing the formed silicon dioxide layer (13) and the gate oxide layer (11) by a dry etching process. The method for removing the protection layer is easier to control.Type: ApplicationFiled: July 25, 2013Publication date: June 4, 2015Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.Inventors: Qiang Rui, Shuo Zhang, Genyi Wang, Xiaoshe Deng