Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: A multi-stage flame acceleration device and method for a gas-fuel engine are provided. The device includes a pressing piece, an upper chamber, a spark plug, a fuel ejector, a cooling device, and a flame acceleration nozzle. The spark plug and the fuel ejector are mounted in the upper chamber. The pressing piece is sleeved on an upper part of the upper chamber, and the device is wholly and fixedly connected to a cylinder head through a step groove of the upper chamber. A nozzle sealing ring, the flame acceleration nozzle, and a cylinder head sealing ring are mounted at a bottom of the upper chamber from top to bottom in sequence. Annular obstacles formed by annular plates are arranged in a chamber of the flame acceleration nozzle. In the method, a fuel is ejected in the chamber of the flame acceleration nozzle to obtain a homogeneous gas mixture.

Abstract: Disclosed are a laser assisted cold spray repair device and process method for aviation-grade aluminum alloy structural parts. In the present disclosure, a laser device, a high-pressure gas source, a powder feeder, a water cooling system, a reflector, an integrated spray gun, a mobile platform, an air pipe, a powder-gas mixed channel, a lower-pressure powder-gas powder feeding port, an air pressure regulating valve, a high-pressure airflow heater and a powder pipe are included. The powder spray gun and a heating laser source are connected coaxially, and a processing zone of the mobile platform is provided with a specimen to be processed. In the present disclosure, fatigue properties of repaired aviation-grade aluminum alloy specimens are restored to an original state before damage and satisfy service requirements.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: A stethoscope kit includes a storage cylinder, a protective shell and an electronic stethoscope. The storage cylinder includes a base and a cylinder body. The protective shell is configured to be sleeved on the cylinder body. Two sides of the cylinder body are each symmetrically provided with a groove. A bottom of the groove is provided with an accommodating groove configured to accommodate the electronic stethoscope. A bottom of the accommodating groove is attached to a bottom of the electronic stethoscope through an attraction mechanism. A charging device is provided in the cylinder body. When the electronic stethoscope is placed in the accommodating groove, the charging device is configured to charge the electronic stethoscope.

Abstract: A mask pattern for forming the semiconductor structure is provided. The mask pattern includes a first mask pattern and a second mask pattern. The first mask pattern includes a plurality of first target patterns, and the plurality of first target patterns are arranged along a first direction. The second mask pattern includes a plurality of second target patterns, and the plurality of second target patterns are arranged along the first direction. When the first mask pattern overlaps the second mask pattern, one of the plurality of first target patterns partially overlaps a corresponding one of the plurality of second target patterns.

Abstract: A mask pattern, a semiconductor structure and a method for forming the semiconductor structure are provided. The mask pattern includes a first mask pattern and a second mask pattern. The first mask pattern includes a plurality of first target patterns, and the plurality of first target patterns are arranged along a first direction. The second mask pattern includes a plurality of second target patterns, and the plurality of second target patterns are arranged along the first direction. When the first mask pattern overlaps the second mask pattern, one of the plurality of first target patterns partially overlaps a corresponding one of the plurality of second target patterns.

Abstract: A mask pattern, a semiconductor structure and a method for forming the semiconductor structure are provided. The mask pattern includes a first mask pattern and a second mask pattern. The first mask pattern includes a plurality of first target patterns, and the plurality of first target patterns are arranged along a first direction. The second mask pattern includes a plurality of second target patterns, and the plurality of second target patterns are arranged along the first direction. When the first mask pattern overlaps the second mask pattern, one of the plurality of first target patterns partially overlaps a corresponding one of the plurality of second target patterns.

Abstract: The present disclosure discloses an array substrate and a display device so as to alleviate the toothed edge appearance when an image is displayed in a dual-gate array substrate structure. The array substrate includes at least one row of pixel elements, a first gate line, and a second gate line. The first gate line and the second gate line are disposed on the same side of the least one row of pixel elements. Thin film transistors are disposed in the pixel elements, and gates of the thin film transistors in two adjacent pixel elements are coupled with the first gate line and the second gate line, respectively.

Abstract: An exposure method and an exposure device are provided. An exemplary exposure device includes a stage, a first clamp holder, a second clamp holder, an optical projection unit, a first alignment detection unit, and/or a second alignment detection unit. The stage includes a first region and a second region. The first clamp holder is located in the first region and adapted for holding a first substrate, and the second clamp holder is located in the second region and adapted for holding a second substrate. The optical projection unit is located above the stage and adapted for exposure of the first substrate or the second substrate. The first alignment detection unit is adapted for detecting alignment marks of the first substrate. The second alignment detection unit is adapted for detecting alignment marks of the second substrate. The exposure device can accurately position the stage and improve production yield.

Abstract: The present disclosure discloses an array substrate and a display device so as to alleviate the toothed edge appearance when an image is displayed in a dual-gate array substrate structure. The array substrate includes at least one row of pixel elements, a first gate line, and a second gate line. The first gate line and the second gate line are disposed on the same side of the least one row of pixel elements. Thin film transistors are disposed in the pixel elements, and gates of the thin film transistors in two adjacent pixel elements are coupled with the first gate line and the second gate line, respectively.

Abstract: The present disclosure provides a lithography machine and a scanning and exposing method thereof. According to the scanning and exposing method, the scanning and exposing process for a whole wafer includes two alternately circulated motions: a scanning and exposing motion and a stepping motion; and the scanning and exposing motion is a sinusoidal motion rather than a rapid-acceleration uniform-speed rapid-deceleration scanning and exposing motion in the conventional techniques. During the scanning of a single exposure shot, it may begin to scan the exposure shot once a wafer stage and a reticle stage begin to accelerate from zero speed. And the scanning and exposing may not end until the speeds of the wafer stage and the reticle decrease to zero. Therefore, the effective time of the scanning and exposing in the scanning and exposing motion is greatly increased and the production efficiency of the wafer is improved.