Patents by Inventor Qiang (Thomas) Li

Qiang (Thomas) Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low gate oxide stress power amplifier
    Patent number: 7109801
    Abstract: A power amplifier includes an input transistor, an output transistor, and circuitry. The input transistor includes an input, a first node, and a second node, wherein the second node of the input transistor is coupled to a supply voltage return and the input of the input transistor operably coupled to receive an outbound radio frequency (RF) signal. The output transistor includes an input, a first node, and a second node, wherein the first node of the output transistor is coupled to provide an output of the power amplifier, the second node of the output transistor is coupled to the first node of the input transistor.
    Type: Grant
    Filed: March 1, 2005
    Date of Patent: September 19, 2006
    Assignee: Broadcom Corporation
    Inventor: Qiang (Thomas) Li
  • Power amplifier having low gate oxide stress
    Patent number: 6888410
    Abstract: A power amplifier includes an input transistor, an input bias circuit, an output transistor, and a power down circuit. The input transistor includes a gate, a drain, and a source, wherein the source of the input transistor is coupled to a supply voltage return and the gate of the input transistor is operably coupled to receive an outbound radio frequency (RF) signal. The input bias circuit is operably coupled to provide an enabling bias voltage to the gate of the input transistor during transmit mode and to provide a disabling bias voltage to the gate of the input transistor during power down mode. The output transistor includes a gate, a drain, and a source, wherein the drain of the output transistor is coupled to provide an output of the power amplifier and the source of the output transistor is coupled to the drain of the input transistor.
    Type: Grant
    Filed: October 10, 2003
    Date of Patent: May 3, 2005
    Assignee: Broadcom Corp.
    Inventor: Qiang (Thomas) Li
  • POWER AMPLIFIER HAVING LOW GATE OXIDE STRESS
    Publication number: 20050077965
    Abstract: A power amplifier includes an input transistor, an input bias circuit, an output transistor, and a power down circuit. The input transistor includes a gate, a drain, and a source, wherein the source of the input transistor is coupled to a supply voltage return and the gate of the input transistor is operably coupled to receive an outbound radio frequency (RF) signal. The input bias circuit is operably coupled to provide an enabling bias voltage to the gate of the input transistor during transmit mode and to provide a disabling bias voltage to the gate of the input transistor during power down mode. The output transistor includes a gate, a drain, and a source, wherein the drain of the output transistor is coupled to provide an output of the power amplifier and the source of the output transistor is coupled to the drain of the input transistor.
    Type: Application
    Filed: October 10, 2003
    Publication date: April 14, 2005
    Inventor: Qiang (Thomas) Li