Abstract: The disclosure provides a security analysis method and system based on protocol state, which relates to the technical field of protocol security protection. The method includes the following: a node traversal table is built, the node traversal table is scanned and analyzed according to the protocol trigger sequence rule, a first security evaluation factor of a protocol stack is determined, and a second security evaluation factor of each protocol is determined based on protocol normal application rule, and the trustworthiness degree of the second security factor is determined based on the first security factor, and the second security factor is revised based on the trustworthiness degree, and the security state of the protocol is determined according to the revised second security factor, thus the analysis of the protocol state is realized, and the security of the protocol can be accurately determined.

Abstract: A device includes a fin on a substrate; a first transistor, including: a drain region and a first source region in the fin; and a first gate structure on the fin between the first source region and the drain region; a second transistor, including: the drain region and a second source region in the fin; and a second gate structure on the fin between the second source region and the drain region; a first resistor, including: the first source region and a first resistor region in the fin; and a third gate structure on the fin between the first source region and the first resistor region; and a second resistor, including: the second source region and a second resistor region in the fin; and a fourth gate structure on the fin between the second source region and the second resistor region.

Abstract: The present invention provides a method for synthesizing tyloxapol of formula (I), including the following steps: first reacting p-tert-octylphenol of formula (III) with formaldehyde under alkaline conditions to obtain 2,5-dimethylol p-tert-octylphenol of formula (IV); then reacting 2,5-dimethylol p-tert-octylphenol with p-tert-octylphenol of formula (III) under acidic conditions to obtain the phenolic resin of formula (II); and finally, reacting the phenolic resin of formula (II) with ethylene oxide to obtain tyloxapol of formula (I).

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, an active region on the substrate, and a gate structure, a source conductor, and a drain conductor disposed on the active region. The semiconductor device further comprises a first type doped region of the active region below the gate structure and a second type doped region of the active region adjacent to the first type doped region, and the first type doped region is different from the second type doped region. The second type doped region is configured to function as a resistor.

Abstract: The disclosure provides a security analysis method and system based on protocol state, which relates to the technical field of protocol security protection. The method includes the following: a node traversal table is built, the node traversal table is scanned and analyzed according to the protocol trigger sequence rule, a first security evaluation factor of a protocol stack is determined, and a second security evaluation factor of each protocol is determined based on protocol normal application rule, and the trustworthiness degree of the second security factor is determined based on the first security factor, and the second security factor is revised based on the trustworthiness degree, and the security state of the protocol is determined according to the revised second security factor, thus the analysis of the protocol state is realized, and the security of the protocol can be accurately determined.

Abstract: A method includes: forming a fin protruding from a substrate; implanting an n-type dopant in the fin to form an n-type channel region; implanting a p-type dopant in the fin to form a p-type channel region adjacent the n-type channel region; forming a first gate structure over the n-type channel region and a second gate structure over the p-type channel region; forming a first epitaxial region in the fin adjacent a first side of the first gate structure; forming a second epitaxial region in the fin adjacent a second side of the first gate structure and adjacent a first side of the second gate structure; and forming a third epitaxial region in the fin adjacent a second side of the second gate structure.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate, an active region on the substrate, and a first transistor having a gate structure, a source conductor, and a drain conductor disposed on the active region, wherein the drain conductor and the source conductor are disposed on opposite sides of the gate structure, and the source conductor is shorter than the drain conductor.

Abstract: The present invention discloses a modular charging device and a cooling structure thereof. The modular charging device comprises a housing, at least one battery package socket located on the housing, and a PCB located in the housing, the at least one battery package socket being located at one or two sides of the PCB, at least one battery package being electrically connectable into the at least one battery package socket in a plug-in manner, and the battery package socket comprising a battery package insertion slot extending inwards from the housing to the PCB. A cooling structure for a modular charging device comprises an air inlet disposed at one end of a housing, an air outlet at another end, and a pathway between a first PCB and a second PCB, the fan causing an airflow to flow through the pathway.

Abstract: Embodiments include a FinFET transistor including an embedded resistor disposed in the fin between the source epitaxial region and the source contact. A control contact may be used to bias the embedded resistor, thereby changing the resistivity of the resistor. Edge gates of the FinFET transistor may be replaced with insulating structures. Multiple ones of the FinFET/embedded resistor combination may be utilized together in a common drain/common source contact design.

Abstract: A method includes: forming a fin protruding from a substrate; implanting an n-type dopant in the fin to form an n-type channel region; implanting a p-type dopant in the fin to form a p-type channel region adjacent the n-type channel region; forming a first gate structure over the n-type channel region and a second gate structure over the p-type channel region; forming a first epitaxial region in the fin adjacent a first side of the first gate structure; forming a second epitaxial region in the fin adjacent a second side of the first gate structure and adjacent a first side of the second gate structure; and forming a third epitaxial region in the fin adjacent a second side of the second gate structure.

Abstract: A device includes a fin on a substrate; a first transistor, including: a drain region and a first source region in the fin; and a first gate structure on the fin between the first source region and the drain region; a second transistor, including: the drain region and a second source region in the fin; and a second gate structure on the fin between the second source region and the drain region; a first resistor, including: the first source region and a first resistor region in the fin; and a third gate structure on the fin between the first source region and the first resistor region; and a second resistor, including: the second source region and a second resistor region in the fin; and a fourth gate structure on the fin between the second source region and the second resistor region.

Abstract: A use of a compound as a CYP2E1 inhibitor includes: using a compound shown in formula (I) or a salt thereof as an inhibitor to inhibit CYP2E1, where the compound or the salt thereof targets and binds to CYP2E1. The inhibitor can be used for the prevention and treatment of a tumor including liver cancer, glioma, ovarian cancer, lung cancer, bladder cancer, and gallbladder cancer. The inhibitor can also be used for the prevention and treatment of an inflammation-mediated disease (IMD) such as liver damage, fatty liver, hepatitis, liver fibrosis, pulmonary fibrosis, rheumatic and rheumatoid arthritis, sepsis, Alzheimer's disease (AD), ischemic stroke, Parkinson's disease (PD), hyperlipidemia, atherosclerosis (AS), coronary heart disease (CHD), and diabetes.

Abstract: The present disclosure discloses a flexible substrate and a method for manufacturing the same, and a flexible display substrate and a method for manufacturing the same. The method for manufacturing the flexible substrate includes: sequentially forming a first flexible substrate layer and a first inorganic layer on a rigid base substrate; forming a second flexible substrate layer on a side of the first inorganic layer distal from the first flexible substrate layer, an orthographic projection of the second flexible substrate layer on the first flexible substrate layer being located within the first flexible substrate layer; and stripping off the rigid base substrate to obtain the flexible substrate. The method solves the problem of poor process of the flexible substrate.

Abstract: The present disclosure provides a cleaning device, cleaning apparatus and cleaning method. The cleaning device including a cleaning portion and at least one liquid amount control portion, the cleaning portion includes a cleaning surface which is capable of absorbing a cleaning liquid for cleaning an object to be cleaned; and the at least one liquid amount control portion is configured to be able to contact the cleaning surface and apply a contact pressure to the cleaning surface, so as to control a amount of the cleaning liquid contained in the cleaning surface of the cleaning portion as a generally determined value when in contact with the object to be cleaned.

Abstract: The present disclosure discloses a flexible substrate and a method for manufacturing the same, and a flexible display substrate and a method for manufacturing the same. The method for manufacturing the flexible substrate includes: sequentially forming a first flexible substrate layer and a first inorganic layer on a rigid base substrate; forming a second flexible substrate layer on a side of the first inorganic layer distal from the first flexible substrate layer, an orthographic projection of the second flexible substrate layer on the first flexible substrate layer being located within the first flexible substrate layer; and stripping off the rigid base substrate to obtain the flexible substrate. The method solves the problem of poor process of the flexible substrate.

Abstract: The present invention discloses a transfer film having a photonic crystal structure and a manufacturing method thereof. The transfer film having photonic crystal structure is obtained by forming a photonic crystal layer on an assembly substrate, and transferring the photonic crystal layer on the assembly substrate onto the printing substrate. The present invention also provides a method for manufacturing the above transfer film.

Abstract: The present disclosure provides a cleaning device, cleaning apparatus and cleaning method. The cleaning device including a cleaning portion and at least one liquid amount control portion, the cleaning portion includes a cleaning surface which is capable of absorbing a cleaning liquid for cleaning an object to be cleaned; and the at least one liquid amount control portion is configured to be able to contact the cleaning surface and apply a contact pressure to the cleaning surface, so as to control a amount of the cleaning liquid contained in the cleaning surface of the cleaning portion as a generally determined value when in contact with the object to be cleaned.

Abstract: Provided is an optically functional material. The optically functional material includes a nano-microsphere layer formed by periodically arranged nano-microspheres, which is a closely packed structure, providing the optically functional material with luster. Wherein, the nano-microsphere layer includes colorless, white, gray, black or chromatic nano-microspheres. The optically functional material of the present invention has a suitable Poisson ratio and Mohs hardness within a specific range of values, and can achieve relative independence between the luster and hue, thus obtaining the special effect of randomly mixed and combined luster and hue as required. Further provided is a method of preparing an optically functional material.

Abstract: The present invention provides metal-organic materials, more specifically organometallic polymers, comprising polypyridyl organic ligands such as tetrakis(4-(pyridin-4-ylethynyl)phenyl)methane, tetrakis(4-(2-(pyridin-4-yl)vinyl)phenyl)methane, 1,3,5,7-tetrakis(4-(pyridin-4-ylethynyl)phenyl)adamantane or 1,3,5,7-tetrakis(4-(2-(pyridine-4-yl)vinyl)phenyl) adamantine, and metal ions structurally coordinated with said ligands, and having three-dimensional crystalline micro or sub-micro structure; as well as a method for the preparation thereof. These metal-organic materials are useful as adsorbents in processes for gas adsorption or separation.

Abstract: The present invention provides metal-organic materials, more specifically organometallic polymers, comprising polypyridyl organic ligands such as tetrakis(4-(pyridin-4-ylethynyl)phenyl)methane, tetrakis(4-(2-(pyridin-4-yl)vinyl)phenyl)methane, 1,3,5,7-tetrakis(4-(pyridin-4-ylethynyl)phenyl)adamantane or 1,3,5,7-tetrakis(4-(2-(pyridine-4-yl)vinyl)phenyl) adamantine, and metal ions structurally coordinated with said ligands, and having three-dimensional crystalline micro or sub-micro structure; as well as a method for the preparation thereof. These metal-organic materials are useful as adsorbents in processes for gas adsorption or separation.