Abstract: This invention relates to a process for producing compounds derived from 9,10-Dihydro-9-Oxa-10-Phosphaphenantrene-10-oxide (DOPO). In particular, the invention relates to producing DOPO-derived compounds by reacting DOPO with diol compounds in the presence of a catalyst. This invention also relates to DOPO derived composition containing a high melting point diastereomer. The DOPO derived compounds may be useful as flame-retardants.

Abstract: This invention relates to a process for producing compounds derived from 9,10-Dihydro-9-Oxa-10-Phosphaphenantrene-10-oxide (DOPO). In particular, the invention relates to producing DOPO-derived compounds by reacting DOPO with diol compounds in the presence of a catalyst. This invention also relates to DOPO derived composition containing a high melting point diastereomer. The DOPO derived compounds may be useful as flame-retardants.

Abstract: A method for increasing the yield of total flavonoids in Ganoderma lucidum mycelium by an expansin comprises: (1) inoculating Ganoderma lucidum into the PD liquid fermentation medium, activating the culturing of the strains and obtaining a seed solution; (2) inoculating the seed solution into a liquid fermentation medium, culturing and adding the expansin solution, then further culturing, isolating and obtaining Ganoderma lucidum mycelium; (3) extracting flavonoids from the Ganoderma lucidum mycelium and obtaining total flavonoids. A plant expansin is used for the liquid fermentation production of flavonoids ingredients of Ganoderma lucidum, and the fermentation process and extraction method are optimized to increase greatly the yield of total flavonoids in Ganoderma lucidum.

Abstract: Method of forming dual gate insulation layers and semiconductor device having dual gate insulation layers is disclosed. The method of forming dual gate insulation layers comprises forming a first thin layer of a thick gate insulation layer on a semiconductor substrate by oxidizing the semiconductor substrate, depositing a second thicker layer of the thick gate insulation layer on the first thin layer, removing a portion of the thick gate insulation layer to expose a surface area of the semiconductor substrate and forming a thin gate insulation layer on the exposed surface area of the semiconductor substrate. The method of forming dual gate insulation layers, when applied in fabricating semiconductor devices having dual gate insulation layers and trench isolation structures, may help to reduce a silicon stress near edges of the trench isolation structures and reduce/alleviate/prevent the formation of a leaky junction around the edges of the trench isolation structures.

Abstract: A method for producing laccase by liquid fermentation of Lentinus edodes comprises the following steps of: (1) inoculating strains of Lentinus edodes into the PD liquid fermentation medium to perform activation culture and obtain a seed liquid; (2) inoculating the seed solution into a liquid fermentation medium to perform liquid fermentation culture, then adding an expansin solution to perform further culture, separating the supernatant to obtain a ferment solution; (3) extracting laccase from the ferment solution. A plant expansin and an optimized fermentation method are applied for producing laccase by liquid fermentation of Lentinus edodes, which increases the liquid fermentation output of laccase of Lentinus edodes remarkably, by more than 3 times in comparing with traditional fermentation production methods.

Abstract: Method of forming dual gate insulation layers and semiconductor device having dual gate insulation layers is disclosed. The method of forming dual gate insulation layers comprises forming a first thin layer of a thick gate insulation layer on a semiconductor substrate by oxidizing the semiconductor substrate, depositing a second thicker layer of the thick gate insulation layer on the first thin layer, removing a portion of the thick gate insulation layer to expose a surface area of the semiconductor substrate and forming a thin gate insulation layer on the exposed surface area of the semiconductor substrate. The method of forming dual gate insulation layers, when applied in fabricating semiconductor devices having dual gate insulation layers and trench isolation structures, may help to reduce a silicon stress near edges of the trench isolation structures and reduce/alleviate/prevent the formation of a leaky junction around the edges of the trench isolation structures.

Abstract: A holographic detection device for a content of a gas in a GIS switch includes a laser and a data process system. The laser includes a laser emitter and a laser receiver which are fixed at a sampling port of the GIS switch and connected with the data process system. A holographic detection method for a content of a gas in a GIS switch includes emitting a laser beam towards the inside of the GIS switch; receiving the laser beam from the inside of the GIS switch, and calculating a content of hydrogen fluoride gas inside the GIS switch according to an intensity of the emitted laser beam and an intensity of the received laser beam. Since the laser beam goes through the inside of the GIS switch, there is a small error in the detection result, which thus can reflect a real state inside the GIS switch.

Abstract: A process for the selective production of vinyl ester by the reaction of a carboxylic acid with acetylene with a homogeneous catalyst is disclosed and claimed. In one aspect, esters of neoacids are provided.

Abstract: This invention relates to a process for producing compounds derived from 9,10-Dihydro-9-Oxa-10-Phosphaphenantrene-10-oxide (DOPO). In particular, the invention relates to producing DOPO-derived compounds by reacting DOPO with diol compounds in the presence of a catalyst. This invention also relates to DOPO derived composition containing a high melting point diastereomer. The DOPO derived compounds may be useful as flame-retardants.

Abstract: A process for the selective production of vinyl ester by the reaction of a carboxylic acid with acetylene with a homogeneous catalyst is disclosed and claimed. In one aspect, esters of neoacids are provided.

Abstract: A process for the selective production of vinyl ester by the reaction of a carboxylic acid with acetylene with a homogeneous catalyst is disclosed and claimed. In a preferred embodiment of this invention, reaction of benzoic acid and acetylene in the presence of Group VIII metal complex catalyst at a temperature of about 50 to 180° C. results in quantitative yields of vinyl benzoate.

Abstract: In one embodiment, the invention is to a method for producing a vinyl acetate composition. The method comprises the step of contacting acetic acid, oxygen, and ethylene under conditions effective to form a crude vinyl acetate composition comprising vinyl acetate, acetic acid, residual oxygen, and water. The method further comprises the step of contacting the crude vinyl acetate composition or a derivative thereof with at least one scavenger to form a treated crude vinyl acetate composition.

Abstract: A process for alkylating a phosphorus-containing compound to provide an alkylated phosphorus-containing compound is provided which comprises alkylating 5 phosphorus-containing compound possessing at least one phosphorus-hydrogen alkylatable site with reactant which generates alkene and/or cycloalkene alkylating agent in situ in the presence of initiator, the alkylene and/or cycloalkylene alkylating agent alkylating the phosphorus-containing component to provide alkylated phosphorus-containing product.

Abstract: A flame retarded thermoplastic polymer composition comprising a thermoplastic polymer and a mixture of metal salts of dialkylphosphinic and monoalkylphosphinic acid providing improved flame retardant performance and better processability compared to a similar composition containing only a salt of dialkylphosphinic acid.

Abstract: A process for the selective production of vinyl ester by the reaction of a carboxylic acid with acetylene under heterogeneous catalytic conditions is disclosed and claimed. In a preferred embodiment of this invention, reaction of benzoic acid and acetylene in the presence of supported platinum catalyst at a temperature of from about 100 to 180° C. results in quantitative yields of vinyl benzoate.

Abstract: A process for the selective production of vinyl ester by the reaction of a carboxylic acid with acetylene with a homogeneous catalyst is disclosed and claimed. In a preferred embodiment of this invention, reaction of benzoic acid and acetylene in the presence of Group VIII metal complex catalyst at a temperature of about 50 to 180° C. results in quantitative yields of vinyl benzoate.

Abstract: A process for the selective production of vinyl ester by the reaction of a carboxylic acid with acetylene under heterogeneous catalytic conditions is disclosed and claimed. In a preferred embodiment of this invention, reaction of benzoic acid and acetylene in the presence of supported platinum catalyst at a temperature of from about 100 to 180° C. results in quantitative yields of vinyl benzoate.

Abstract: A flame retarded thermoplastic polymer composition comprising a thermoplastic polymer and a metal salt of phosphinic acid possessing a desired degree of volatility.

Abstract: A flame retarded thermoplastic polymer composition comprising a thermoplastic polymer and a mixture of metal salts of dialkylphosphinic and monoalkylphosphinic acid providing improved flame retardant performance and better processability compared to a similar composition containing only a salt of dialkylphosphinic acid.

Abstract: An electrical connector mounted on a printed circuit board including an insulative housing (1) provided with a receiving cavity (16) and a number of passageways (121), and a number of contacts retained in the housing. The contacts have a first contact (21) including a first base portion (210) and a first soldering portion (213) extending downwardly from the first base portion, a second contact (22) having a second base portion (220) and a second soldering portion (223) extending downwardly from the second base portion. The first soldering portion includes a first protrusion portion (216) projecting from only one side edge thereof along a first direction. The second soldering portion includes a second protrusion portion (226) projecting from only one side edge thereof along a second direction opposite to the first direction. The first protrusion portion and the second protrusion portion together form a latch portion for fixing with the printed circuit board.