Abstract: A hinge mechanism includes a base and two rotating components. Each rotating component includes a support arm, a swing arm, and a housing mounting bracket. The two support arms are respectively disposed on two sides of the base and are rotatably connected to the base. The two swing arms are respectively disposed on two sides of the base and are rotatably connected to the base. Each of the two housing mounting bracket is provided with two sliding grooves. For a support arm, a swing arm, and a housing mounting bracket that are located on a same side of the base, the support arm and the swing arm may separately slide in a sliding groove, and projections of sliding directions of the support arm and the swing arm are not parallel in a reference plane perpendicular to the rotation axes of the support arm and the swing arm.

Abstract: The hinge mechanism includes a base and a main hinge module. The base includes a support surface for supporting a flexible display. The main hinge module includes a first rotating component and a second rotating component disposed on two opposite sides of the base. The first rotating component includes a first support plate, and the first support plate includes a first plate surface for supporting the flexible display. The second rotating component includes a second support plate, and the second support plate includes a second plate surface for supporting the flexible display. When the hinge mechanism is in a folded state, an included angle between the first plate surface and a bearing surface is less than an included angle between the second plate surface and the bearing surface, to form display accommodating space between the first plate surface, the second plate surface, and the bearing surface.

Abstract: A mask structure, a semiconductor structure and methods for manufacturing the same are disclosed. The method for manufacturing the mask structure includes: forming a pattern transfer layer, a first etching stop layer, a first sacrificial layer and a first hard mask layer sequentially stacked from bottom to top; patterning the first sacrificial layer and the first hard mask layer, to obtain a first sacrificial pattern, the first sacrificial pattern exposing the first etching stop layer; forming a first initial mask pattern on side walls of the first sacrificial pattern; removing the first sacrificial pattern; removing, based on the first initial mask pattern, a part of the first etching stop layer of which a top surface being exposed; removing the first initial mask pattern, and using the remaining part of the first etching stop layer on the upper surface of the pattern transfer layer as a first mask pattern.

Abstract: A method for developing an epoxy resin impregnated glass fiber Direct Current (DC) bushing, comprising: according to length parameters of each layer of capacitive screen or resistive screen designed depending on insulation requirements, selecting bushing design parameters, determining a winding machine program according to the bushing design parameters, and winding a core body according to the winding machine program, wherein during the core body winding process, the core body begins to be initially cured; after the core body is wound, curing the core body by an oven according to a preset oven temperature and duration; machining the cured core body according to a preset core body design drawing; after the inner wall of a flange is polished and cleaned and is heated and pretreated by the oven, injecting glue at the position of a glue injection hole of the flange for gluing the core body and the flange; sequentially assembling a collector ring, a hollow composite insulator, and a voltage-equalizing sealing cove

Abstract: An electrode structure includes a substrate and a silver nanowire electrode disposed on the substrate. The electrode structure can be changed from an expanded state to a bent state with a bending radius of about 2-4 mm. The electrode structure includes a bending region and a first non-bending region and a second non-bending region respectively adjacent to the bending region in the bent state. The silver nanowire electrode has a change rate of a resistance value between the bent state and the expanded state of less than 10% in an electrode section of the bending region.

Abstract: A method for forming a pattern can include the following operations. A substrate is provided, on the surface of which a patterned photoresist layer is formed. Based on the photoresist layer, isolation sidewalls are formed, in which each isolation sidewall includes a first sidewall close to the photoresist layer and a second sidewall away from the photoresist layer. Core material layers are formed between two adjacent isolation sidewalls. The second sidewalls are removed to form the pattern composed of the first sidewalls and the core material layers.

Abstract: The rotation shaft structure includes a main shaft assembly, and two folding assemblies that are symmetrically disposed with respect to the main shaft assembly. The two folding assemblies may rotate toward or against each other relative to the main shaft assembly. When the folding assembly is specifically disposed, the folding assembly includes a rotation assembly, a support plate, and a housing mounting bracket. The rotation assembly is rotationally connected to the main shaft assembly. The support plate is rotationally connected to the housing mounting bracket and slidably connected to the rotation assembly.

Abstract: Embodiments provide a memory and a fabrication method thereof, and relates to the field of storage device technology to solve the technical problem of lower storage density of the memory. The fabrication method of the memory includes: providing a substrate including a central region and an edge region connected to each other, a first contact structure electrically connected to a wordline structure in the substrate being formed in the edge region; forming a second contact structure electrically connected to the first contact structure on the edge region; forming a capacitor structure electrically connected to the wordline structure on the central region; forming a third contact structure electrically connected to the second contact structure on the second contact structure; and forming a transistor structure electrically connected to the wordline structure on the capacitor structure and the third contact structure.

Abstract: A rotating shaft mechanism and an electronic device comprising the rotating shaft mechanism are provided. In an implementation, the rotating shaft mechanism includes a base, a first driving part, a guiding part, and a second driving part. The base includes a fastener and two first rotating arms. The fastener is fastened to the base. One end of each first rotating arm is rotatively connected to the fastener, and the other end is fastened to a middle frame. The guiding part includes two guiding blocks. Each guiding block is rotatively connected to the base, each guiding block corresponds to one first rotating arm, and the guiding block is linked to the first rotating arm. The second driving part includes two second rotating arms, the second rotating arm is fastened to a casing, and the second rotating arm is linked to the guiding block.

Abstract: Embodiments provide a rotating shaft mechanism applicable to the field of foldable displays of electronic device technologies. The rotating shaft mechanism includes a main body, a first support plate, a second support plate, a middle support plate, a first swing arm, and a second swing arm. The first swing arm, the main body, and the first support plate may form a slider-crank, and the second swing arm, the main body, and the second support plate also form a slider-crank. The middle support plate may move relative to the main body when driven by at least one of the first support plate, the second support plate, the first swing arm, or the second swing arm.

Abstract: An embodiment of the disclosure provides a method for manufacturing a semiconductor structure, including: providing a substrate, where the substrate has a peripheral region and an array region; stacking and forming an insulating layer and a mask layer with a mask pattern on the substrate; etching the insulating layer with the mask layer as a mask to form a contact hole penetrating the insulating layer at the array region; reserving the mask layer; in a direction perpendicular to a surface of the substrate, providing a thickness difference between the mask layer of the peripheral region and the mask layer of the array region; forming a first material layer; forming a second material layer; etching a part of the mask layer with the second material layer as the mask; and removing the remaining second material layer, the remaining mask layer and the first material layer on the remaining mask layer.

Abstract: A method for manufacturing a memory and a memory is provided. The method for manufacturing a memory includes: providing a substrate; stacking an electrode support structure, a protective layer and a first mask layer in sequence on the substrate; patterning the first mask layer on an array region, and etching the protective layer, the electrode support structure and the substrate by using the patterned first mask layer as a mask, to form capacitor holes penetrating the protective layer and the electrode support structure and extending into the substrate; removing the first mask layer; and forming a first electrode layer on side walls and bottom walls of the capacitor holes, a top surface of the first electrode layer being flush with a top surface of the electrode support structure.

Abstract: A method for manufacturing a memory includes: providing a substrate, capacitor contact pads being formed in the substrate; forming a laminated structure on the substrate, the laminated structure including a first laminated structure formed on the substrate and a second laminated structure formed on the first laminated structure; forming first through holes in the second laminated structure; forming a protective layer on side walls of the first through holes, the protective layer in the first through holes enclosing second through holes; and etching the first laminated structure along the second through holes to form third through holes, the third through holes exposing the capacitor contact pads.

Abstract: Embodiment relates to a method for fabricating a semiconductor structure. The method includes: forming a first pattern on the first region and forming a second pattern on the second region, wherein the first pattern includes a plurality of first sub-patterns, a first gap is provided between adjacent two of the plurality of first sub-patterns, a width of the first gap is a first pitch, and wherein the second pattern includes a plurality of second sub-patterns, a second gap is provided between adjacent two of the plurality of second sub-patterns, a width of the second gap is a second pitch, and the second pitch is greater than the first pitch; forming a first mask layer on a sidewall of the first pattern, and forming a second mask layer on a sidewall of the second pattern; and removing the first pattern and the second pattern.

Abstract: A rotating shaft mechanism includes a body, a first door plate, a second door plate, an intermediate door plate, a first connecting rod assembly, and a second connecting rod assembly. The first connecting rod assembly includes a first housing connecting rod, a first gear connecting rod, and a first secondary connecting rod. The rotating shaft mechanism further includes a first meshing transmission structure. The first housing connecting rod, the first gear connecting rod, the first secondary connecting rod, the first door plate, and the body form a crank-slider structure to drive the first door plate to rotate relative to the body. The first gear connecting rod drives the intermediate door plate to move relative to the body using the first meshing transmission structure.

Abstract: A method for forming a capacitor array structure includes the following operations. A base is formed, which includes a substrate, a stack structure located on the substrate and a mask layer located on the stack structure in which an etching window that penetrates the mask layer in a direction perpendicular to the substrate is provided. The stack structure is etched along the etching window to form a capacitor hole that penetrates the stack structure along the direction perpendicular to the substrate. A conductive layer that fills up the capacitor hole and the etching window and covers a top surface of the mask layer is formed. The conductive layer and the mask layer at a top surface of the stack structure are removed, and the conductive layer remaining in the capacitor hole forms a lower electrode.

Abstract: A foldable hinge includes a base and two folding assemblies. The two folding assemblies are located on two sides of the base, are both connected to the base, and are capable of being opened or closed relative to each other. Each of the two folding assemblies includes a first swing arm, a second swing arm, a synchronous gear, and a support component. The first swing arm is pivotally connected to the base. The second swing arm is pivotally connected to the base. The synchronous gear is located in the base, and the first swing arm and the second swing arm are connected through transmission by using the synchronous gear. The support component is pivotally connected to the first swing arm, is linked to the second swing arm, and is capable of rotating relative to the first swing arm under an action of the second swing arm.

Abstract: A rotating shaft mechanism (1) includes a main shaft module (101), and the main shaft module (101) includes a base (1013), a first support plate (1011), a second support plate (1012), a first gear linkage (1014), a second gear linkage (1015), an elastic mechanical part (1022), and a conjoined cam (1021). The first support plate (1011) and the second support plate (1012) are rotatably connected to the base (1013). The first gear linkage (1014) and the second gear linkage (1015) are rotatably connected to an end portion of the base (1013), and the first gear linkage (1014) and the second gear linkage (1015) are connected through transmission by using gears that are engaged with each other.

Abstract: The present disclosure provides a manufacturing method of a semiconductor structure and a semiconductor structure, and relates to the technical field of semiconductors. The manufacturing method includes: providing a base, wherein the base is provided with an active region; forming a gate layer on the base; forming isolation structures on a periphery of the gate layer, wherein in a direction away from the gate layer, each of the isolation structures at least includes a hollow portion and an isolation portion; forming an insulating structure on top surfaces of the isolation structures; forming contact plugs, wherein the contact plugs penetrate the insulating structure; an end of each of the contact plugs close to the base is electrically connected to the active region; each of the contact plugs is located on a side of each of the isolation structures away from the gate layer.

Abstract: This application provides a rotation shaft structure and an electronic device. The rotation shaft structure includes a main shaft assembly, and two folding assemblies. The folding assembly includes a rotation assembly, a support plate, and a housing mounting bracket. The rotation assembly is rotationally connected to the main shaft assembly. The support plate is rotationally connected to the housing mounting bracket and slidably connected to the rotation assembly. When two housing mounting brackets rotate toward each other, two support plates rotate in a same direction relative to the housing mounting brackets on corresponding sides, so that the two support plates and the main shaft assembly can form a triangle-like display accommodation space. When the electronic device is in a closed state, the display accommodation space can be used for accommodating a bent portion of the flexible display, so that the flexible display is not damaged by extrusion.