Patents by Inventor Qiangfei Xia
Qiangfei Xia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240046083Abstract: A system includes a sensor, a plurality of cells, and a processor. The sensor includes a plurality of transducers arranged on a planar surface and includes a first transducer and a second transducer. The first transducer is configured to produce an analog output signal corresponding to a detected input signal. The cells are arranged in a network and include a first and a second cell and are disposed proximate the sensor in a three-dimensional stacking fashion. The first transducer and the second transducer are electrically coupled to the first cell and the second cell in one-to-one relation. The first cell includes a plurality of inputs and a first cell output. Each input is coupled to an output of a corresponding plurality of neighboring cells. The first cell includes a first memristor and a bridge circuit configured to receive the analog output signal and provide a current corresponding to the detected input signal in a pixel-parallel fashion.Type: ApplicationFiled: July 25, 2023Publication date: February 8, 2024Inventors: Qiangfei Xia, Vigneshwar Ravichandran, Tina Maurer
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Patent number: 11586884Abstract: A diffusive memristor device and an electronic device for emulating a biological neuron is disclosed. The diffusive memristor device includes a bottom electrode, a top electrode formed opposite the bottom electrode, and a dielectric layer disposed between the top electrode and the bottom electrode. The dielectric layer comprises an oxide doped with a metal.Type: GrantFiled: February 8, 2019Date of Patent: February 21, 2023Assignee: University of MassachusettsInventors: Jianhua Yang, Qiangfei Xia, Mark McLean, Qing Wu
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Publication number: 20210382696Abstract: A true random number generator device based on a diffusive memristor is disclosed. The random number generator device includes a diffusive memristor driven by a pulse generator circuit. The diffusive memristor produces a stochastically switched output signal. A comparator circuit receives the stochastically switched output signal from the diffusive memristor and generates an output signal having a random pulse width. An AND gate logic circuit is driven by a clock signal and the output signal from the comparator circuit. The AND gate logic circuit produces a combined output signal. A counter circuit receives the combined output signal from the AND gate logic circuit and generates a random bit string output signal.Type: ApplicationFiled: August 20, 2021Publication date: December 9, 2021Inventors: Jianhua Yang, Qiangfei Xia, Hao Jiang
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Patent number: 11126403Abstract: A true random number generator device based on a diffusive memristor is disclosed. The random number generator device includes a diffusive memristor driven by a pulse generator circuit. The diffusive memristor produces a stochastically switched output signal. A comparator circuit receives the stochastically switched output signal from the diffusive memristor and generates an output signal having a random pulse width. An AND gate logic circuit is driven by a clock signal and the output signal from the comparator circuit. The AND gate logic circuit produces a combined output signal. A counter circuit receives the combined output signal from the AND gate logic circuit and generates a random bit string output signal.Type: GrantFiled: March 28, 2019Date of Patent: September 21, 2021Assignee: University of MassachusettsInventors: Jianhua Yang, Qiangfei Xia, Hao Jiang
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Patent number: 10740672Abstract: In one aspect, an apparatus includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor, wherein the apparatus exhibits volatile memcapacitive behavior. In another aspect, a device includes a transistor, and a memcapacitor integrated onto the gate of the transistor, wherein the memcapacitor exhibits volatile memcapacitive behavior. The memcapacitor includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor, wherein the gate dielectric of the transistor is replaced with the memcapacitor. In another aspect, an artificial neuron device includes a transistor, a volatile memcapacitor that is configured to operate as an electrically floating gate of the transistor, and one or more synaptic circuits that are coupled to the volatile memcapacitor. The volatile memcapacitor includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor.Type: GrantFiled: April 1, 2019Date of Patent: August 11, 2020Assignee: Univerity of MassachusettsInventors: Jianhua Yang, Qiangfei Xia, Zhongrui Wang, Qing Wu, Mark R. McLean
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Patent number: 10741759Abstract: A diffusive memristor device and an electronic device for emulating a biological synapse are disclosed. The diffusive memristor device includes a bottom electrode, a top electrode formed opposite the bottom electrode, and a dielectric layer disposed between the top electrode and the bottom electrode. The dielectric layer comprises silver doped silicon oxynitride (SiOxNy:Ag). In an alternate implementation, the dielectric layer comprises silver doped silicon oxide (Ag:SiO2). An electronic synapse emulation device is also disclosed. The synapse emulation device includes a diffusive memristor device, a drift memristor device connected in series with the diffusive memristor device, a first voltage pulse generator connected to the diffusive memristor device, and a second voltage pulse generator connected to the drift memristor device. Application of a signal from one of the first voltage pulse generator or the second voltage pulse generator allows the synapse emulation device to exhibit long-term plasticity.Type: GrantFiled: September 26, 2018Date of Patent: August 11, 2020Assignee: University of MassachusettsInventors: Jianhua Yang, Qiangfei Xia, Mark McLean, Qing Wu, Mark Barnell
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Publication number: 20200227635Abstract: A diffusive memristor device and an electronic device for emulating a biological synapse are disclosed. The diffusive memristor device includes a bottom electrode, a top electrode formed opposite the bottom electrode, and a dielectric layer disposed between the top electrode and the bottom electrode. The dielectric layer comprises silver doped silicon oxynitride (SiOxNy:Ag). In an alternate implementation, the dielectric layer comprises silver doped silicon oxide (Ag:SiO2). An electronic synapse emulation device is also disclosed. The synapse emulation device includes a diffusive memristor device, a drift memristor device connected in series with the diffusive memristor device, a first voltage pulse generator connected to the diffusive memristor device, and a second voltage pulse generator connected to the drift memristor device. Application of a signal from one of the first voltage pulse generator or the second voltage pulse generator allows the synapse emulation device to exhibit long-term plasticity.Type: ApplicationFiled: September 26, 2018Publication date: July 16, 2020Inventors: Jianhua Yang, Qiangfei Xia, Mark McLean, Qing Wu, Mark Barnell
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Patent number: 10580679Abstract: Disclosed herein is a method comprising disposing on a first substrate a two-dimensional exfoliatable material; patterning an exfoliatable material using a photoresist in a manner such that a portion of the photoresist remains in contact with the two-dimensional exfoliatable material after the patterning; disposing a polymer layer on the two-dimensional exfoliatable material to form a printing block; contacting a substrate with the printing block; and removing the polymer layer and the photoresist from the printing block to leave behind the patterned exfoliatable material on the substrate.Type: GrantFiled: September 22, 2016Date of Patent: March 3, 2020Assignee: THE UNIVERSITY OF MASSACHUSETTSInventors: Qiangfei Xia, Peng Lin
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Publication number: 20190303744Abstract: In one aspect, an apparatus includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor, wherein the apparatus exhibits volatile memcapacitive behavior. In another aspect, a device includes a transistor, and a memcapacitor integrated onto the gate of the transistor, wherein the memcapacitor exhibits volatile memcapacitive behavior. The memcapacitor includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor, wherein the gate dielectric of the transistor is replaced with the memcapacitor. In another aspect, an artificial neuron device includes a transistor, a volatile memcapacitor that is configured to operate as an electrically floating gate of the transistor, and one or more synaptic circuits that are coupled to the volatile memcapacitor. The volatile memcapacitor includes a diffusive memristor, and a capacitor integrated in series with the diffusive memristor.Type: ApplicationFiled: April 1, 2019Publication date: October 3, 2019Inventors: Jianhua Yang, Qiangfei Xia, Zhongrui Wang, Qing Wu, Mark R. McLean
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Publication number: 20190303104Abstract: A true random number generator device based on a diffusive memristor is disclosed. The random number generator device includes a diffusive memristor driven by a pulse generator circuit. The diffusive memristor produces a stochastically switched output signal. A comparator circuit receives the stochastically switched output signal from the diffusive memristor and generates an output signal having a random pulse width. An AND gate logic circuit is driven by a clock signal and the output signal from the comparator circuit. The AND gate logic circuit produces a combined output signal. A counter circuit receives the combined output signal from the AND gate logic circuit and generates a random bit string output signal.Type: ApplicationFiled: March 28, 2019Publication date: October 3, 2019Inventors: Jianhua Yang, Qiangfei Xia, Hao Jiang
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Publication number: 20190244088Abstract: A diffusive memristor device and an electronic device for emulating a biological neuron is disclosed. The diffusive memristor device includes a bottom electrode, a top electrode formed opposite the bottom electrode, and a dielectric layer disposed between the top electrode and the bottom electrode. The dielectric layer comprises an oxide doped with a metal.Type: ApplicationFiled: February 8, 2019Publication date: August 8, 2019Inventors: Jianhua Yang, Qiangfei Xia, Mark McLean, Qing Wu
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Patent number: 10186660Abstract: A resistance switching device is disclosed and is fabricated to create a memristor device. The memristor device includes a substrate and a platinum bottom electrode formed on the substrate. A tantalum top electrode is formed opposite the bottom electrode, and an electrical insulator layer is disposed between the top electrode and the bottom electrode, wherein the electrical insulator layer comprises hafnium oxide. In an alternate implementation, a titanium nitride layer is deposited on the substrate, which then allows a reduced thickness platinum bottom electrode layer to be deposited on the titanium nitride layer.Type: GrantFiled: March 28, 2017Date of Patent: January 22, 2019Assignee: University of MassachusettsInventors: Qiangfei Xia, Hao Jiang, Jianhua Yang
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Publication number: 20180287058Abstract: A resistance switching device is disclosed and is fabricated to create a memristor device. The memristor device includes a substrate and a platinum bottom electrode formed on the substrate. A tantalum top electrode is formed opposite the bottom electrode, and an electrical insulator layer is disposed between the top electrode and the bottom electrode, wherein the electrical insulator layer comprises hafnium oxide. In an alternate implementation, a titanium nitride layer is deposited on the substrate, which then allows a reduced thickness platinum bottom electrode layer to be deposited on the titanium nitride layer.Type: ApplicationFiled: March 28, 2017Publication date: October 4, 2018Inventors: Qiangfei Xia, Hao Jiang, Jianhua Yang
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Publication number: 20180277413Abstract: Disclosed herein is a method comprising disposing on a first substrate a two-dimensional exfoliatable material; patterning an exfoliatable material using a photoresist in a manner such that a portion of the photoresist remains in contact with the two-dimensional exfoliatable material after the patterning; disposing a polymer layer on the two-dimensional exfoliatable material to form a printing block; contacting a substrate with the printing block; and removing the polymer layer and the photoresist from the printing block to leave behind the patterned exfoliatable material on the substrate.Type: ApplicationFiled: September 22, 2016Publication date: September 27, 2018Applicant: THE UNIVERSITY OF MASSACHUSETTSInventors: Qiangfei Xia, Peng Lin
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Patent number: 9998106Abstract: A memristive radio frequency (RF) switch circuit comprises a first metal electrode and a second metal electrode arranged on an insulating substrate and separated by an air gap, wherein the air gap is fifty nanometers (50 nm) or less, and wherein applying and removing an enabling voltage to the memristive RF switch enables the memristive RF switch to pass RF signals between the first electrode and the second electrode even when the enabling voltage is removed from the memristive switch, and wherein applying and removing a disabling voltage to the memristive switch disables the memristive switch.Type: GrantFiled: April 17, 2015Date of Patent: June 12, 2018Assignee: University of MassachusettsInventors: Qiangfei Xia, Joseph Bardin, Shuang Pi
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Patent number: 9871077Abstract: A memory device includes one or more first semiconductor ridges formed on a first semiconductor wafer. The first semiconductor ridges are configured to be first electrodes. The memory device also includes one or more second semiconductor ridges formed on a second semiconductor wafer. The second semiconductor ridges are configured to be second electrodes and are placed orthogonally on top of the first semiconductor ridges forming a crossbar structure, with sharp edges of the first semiconductor ridges coupled to sharp edges of the second semiconductor ridges. Each area of coupling of a first semiconductor ridge and a second semiconductor ridge is configured to be a memory cell. In addition, the memory device includes a compound layer covering the sharp edges of at least one of the first semiconductor ridges or the second semiconductor ridges. The compound layer is configured to be a switching layer.Type: GrantFiled: December 8, 2014Date of Patent: January 16, 2018Assignee: University of MassachusettsInventor: Qiangfei Xia
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Publication number: 20160351256Abstract: A memory device includes one or more first semiconductor ridges formed on a first semiconductor wafer. The first semiconductor ridges are configured to be first electrodes. The memory device also includes one or more second semiconductor ridges formed on a second semiconductor wafer. The second semiconductor ridges are configured to be second electrodes and are placed orthogonally on top of the first semiconductor ridges forming a crossbar structure, with sharp edges of the first semiconductor ridges coupled to sharp edges of the second semiconductor ridges. Each area of coupling of a first semiconductor ridge and a second semiconductor ridge is configured to be a memory cell. In addition, the memory device includes a compound layer covering the sharp edges of at least one of the first semiconductor ridges or the second semiconductor ridges. The compound layer is configured to be a switching layer.Type: ApplicationFiled: December 8, 2014Publication date: December 1, 2016Inventor: Qiangfei Xia
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Publication number: 20150303376Abstract: A memristive radio frequency (RF) switch circuit comprises a first metal electrode and a second metal electrode arranged on an insulating substrate and separated by an air gap, wherein the air gap is fifty nanometers (50 nm) or less, and wherein applying and removing an enabling voltage to the memristive RF switch enables the memristive RF switch to pass RF signals between the first electrode and the second electrode even when the enabling voltage is removed from the memristive switch, and wherein applying and removing a disabling voltage to the memristive switch disables the memristive switch.Type: ApplicationFiled: April 17, 2015Publication date: October 22, 2015Inventors: Qiangfei Xia, Joseph Bardin, Shuang Pi
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Patent number: 9068921Abstract: An analyzer is disclosed herein. The analyzer encompasses a substrate having a surface with a plurality of distinct V-grooves formed therein. An input flow channel is configured to intersect and fluidly communicate with each of the plurality of distinct V-grooves at respective input points, and an output flow channel is configured to intersect and fluidly communicate with each of the plurality of distinct V-grooves at respective output points.Type: GrantFiled: March 7, 2009Date of Patent: June 30, 2015Assignee: Hewlett-Packard Development Company, L.P.Inventors: Wei Wu, Qiangfei Xia, Shih-Yuan Wang, Jingjing Li
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Patent number: 8879300Abstract: Various embodiments of the present invention are directed to nanoscale electronic devices that provide nonvolatile memristive switching. In one aspect, a two-terminal device (600) comprises a first electrode (602), a second electrode (604), and an active region (606) disposed between the first electrode and the second electrode. The active region includes a mobile dopant (608), and a fast drift ionic species (610). The fast drift ionic species drifts into a diode-like electrode/active region interface temporarily increasing conductance across the interface when a write voltage is applied to the two-terminal device to switch the device conductance.Type: GrantFiled: April 22, 2010Date of Patent: November 4, 2014Assignee: Hewlett-Packard Development Company, L.P.Inventors: Jianhua Yang, Wei Wu, Qiangfei Xia