Patents by Inventor Qianghua Xie

Qianghua Xie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor layer formation
    Patent number: 7056778
    Abstract: A process for forming strained semiconductor layers. The process include flowing a chlorine bearing gas (e.g. hydrogen chloride, chlorine, carbon tetrachloride, and trichloroethane) over the wafer while heating the wafer. In one example, the chorine bearing gas is flowed during a condensation process on a semiconductor layer that is used as a template layer for forming a strain semiconductor layer (e.g. strain silicon). In other examples, the chlorine bearing gas is flowed during a post bake of the wafer after the condensation operation.
    Type: Grant
    Filed: August 17, 2004
    Date of Patent: June 6, 2006
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Chun-Li Liu, Mariam G. Sadaka, Alexander L. Barr, Bich-Yen Nguyen, Voon-Yew Thean, Shawn G. Thomas, Ted R. White, Qianghua Xie
  • Semiconductor layer formation
    Publication number: 20050070057
    Abstract: A process for forming strained semiconductor layers. The process include flowing a chlorine bearing gas (e.g. hydrogen chloride, chlorine, carbon tetrachloride, and trichloroethane) over the wafer while heating the wafer. In one example, the chorine bearing gas is flowed during a condensation process on a semiconductor layer that is used as a template layer for forming a strain semiconductor layer (e.g. strain silicon). In other examples, the chlorine bearing gas is flowed during a post bake of the wafer after the condensation operation.
    Type: Application
    Filed: August 17, 2004
    Publication date: March 31, 2005
    Inventors: Chun-Li Liu, Mariam Sadaka, Alexander Barr, Bich-Yen Nguyen, Voon-Yew Thean, Shawn Thomas, Ted White, Qianghua Xie