Patents by Inventor Qiangmin WEI

Qiangmin WEI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12078791
    Abstract: Aspects of the disclosure provide a method of tilting characterization. The method includes measuring a first tilting shift of structures based on a first disposition of the structures. The structures are formed in a vertical direction on a horizontal plane of a product. A second tilting shift of the structures is measured based on a second disposition of the structures. The second disposition is a horizontal flip of the first disposition. A corrected tilting shift is determined based on the first tilting shift and the second tilting shift.
    Type: Grant
    Filed: October 20, 2021
    Date of Patent: September 3, 2024
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Jun Liu, Yu Li, Yi Li, Yingfei Wang, Shiyan Wu, Qiangmin Wei
  • Publication number: 20230073472
    Abstract: Aspects of the disclosure provide a method of tilting characterization. The method includes measuring a first tilting shift of structures based on a first disposition of the structures. The structures are formed in a vertical direction on a horizontal plane of a product. A second tilting shift of the structures is measured based on a second disposition of the structures. The second disposition is a horizontal flip of the first disposition. A corrected tilting shift is determined based on the first tilting shift and the second tilting shift.
    Type: Application
    Filed: October 20, 2021
    Publication date: March 9, 2023
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Jun LIU, Yu LI, Yi LI, Yingfei WANG, Shiyan WU, Qiangmin WEI
  • Patent number: 11467084
    Abstract: Aspects of the disclosure provide methods for polysilicon characterization. The method includes receiving image data of a polysilicon structure formed on a sample substrate. The image data is in a spatial domain and is generated by transmission electron microscopy (TEM). Further, the method includes extracting frequency spectrum of the image data in a frequency domain. Then, the method includes selecting a subset of the frequency spectrum that corresponds to characteristic of first crystal grains that are of a first orientation, and transforming the selected subset of the frequency spectrum to the spatial domain to construct a first spatial image for the first crystal grains of the first orientation.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: October 11, 2022
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Junzhan Liu, Chao Shen, Zhiliang Xia, Qiangmin Wei, Lei Li, Hai Song, Bingguo Wang
  • Publication number: 20200400555
    Abstract: Aspects of the disclosure provide methods for polysilicon characterization. The method includes receiving image data of a polysilicon structure formed on a sample substrate. The image data is in a spatial domain and is generated by transmission electron microscopy (TEM). Further, the method includes extracting frequency spectrum of the image data in a frequency domain. Then, the method includes selecting a subset of the frequency spectrum that corresponds to characteristic of first crystal grains that are of a first orientation, and transforming the selected subset of the frequency spectrum to the spatial domain to construct a first spatial image for the first crystal grains of the first orientation.
    Type: Application
    Filed: December 6, 2019
    Publication date: December 24, 2020
    Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Junzhan LIU, Chao SHEN, Zhiliang XIA, Qiangmin WEI, Lei LI, Hai SONG, Bingguo WANG