Patents by Inventor Qiankun HOU

Qiankun HOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solar cell, manufacturing method thereof, and photovoltaic module
    Patent number: 11751411
    Abstract: Provided are a solar cell, a manufacturing method thereof and a photovoltaic module. The solar cell includes a semiconductor substrate, the semiconductor substrate having a first surface and a second surface opposite to each other; a first passivation layer and a first electrode layer that are located on the first surface of the semiconductor substrate; and a second passivation layer and a second electrode layer that are located on the second surface of the semiconductor substrate. A donor material film layer is provided between the first passivation layer and the first surface of the semiconductor substrate, and/or an acceptor material film layer is provided between the second passivation layer and the second surface of the semiconductor substrate.
    Type: Grant
    Filed: August 26, 2021
    Date of Patent: September 5, 2023
    Assignees: SHANGHAI JINKO GREEN ENERGY ENTERPRISE MANAGEMENT CO., LTD., ZHEJIANG JINKO SOLAR CO., LTD.
    Inventors: Qiankun Hou, Jingsheng Jin, Dong Wang, Nannan Yang
  • SOLAR CELL, MANUFACTURING METHOD THEREOF, AND PHOTOVOLTAIC MODULE
    Publication number: 20230041048
    Abstract: Provided are a solar cell, a manufacturing method thereof and a photovoltaic module. The solar cell includes a semiconductor substrate, the semiconductor substrate having a first surface and a second surface opposite to each other; a first passivation layer and a first electrode layer that are located on the first surface of the semiconductor substrate; and a second passivation layer and a second electrode layer that are located on the second surface of the semiconductor substrate. A donor material film layer is provided between the first passivation layer and the first surface of the semiconductor substrate, and/or an acceptor material film layer is provided between the second passivation layer and the second surface of the semiconductor substrate.
    Type: Application
    Filed: August 26, 2021
    Publication date: February 9, 2023
    Inventors: Qiankun HOU, Jingsheng JIN, Dong WANG, Nannan YANG