Abstract: A method for chemical mechanical polishing of a copper substrate, is provided, comprising: providing a copper substrate; providing slurry composition comprising, as initial components: water; 0.1 to 20 wt % abrasive; 0.01 to 15 wt % complexing agent; 0.02 to 5 wt % inhibitor; 0.01 to 5 wt % phosphorus containing compound; 0.001 to 3 wt % polyvinyl pyrrolidone; >0.1 to 1 wt % histidine; >0.1 to 1 wt % guanidine; optional oxidizing agent; optional leveling agent; optional biocide; and, optional pH adjusting agent; wherein the slurry composition provided has pH of 9 to 11; providing a chemical mechanical polishing pad with a polishing surface; dispensing the slimy composition onto the polishing surface at or near the interface between the polishing surface and the substrate; and, creating dynamic contact at an interface between the polishing surface and the substrate with a down force of 0.69 to 34.5 kPa; wherein the substrate is polished.

Abstract: The aqueous slurry is useful for chemical mechanical polishing semiconductor substrates having copper interconnects. The aqueous slurry includes by weight percent, 0.01 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.001 to 3 polyvinyl pyrrolidone, 0.01 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0.001 to 10 complexing agent formed during polishing and balance water; and the aqueous slurry has a pH of at least 8.

Abstract: The aqueous slurry is useful for chemical mechanical polishing a semiconductor substrate having copper interconnects. The slurry contains by weight percent, 0 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.001 to 5 polyvinyl pyrrolidone, 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonionic hydrophilic portion and an anionic hydrophilic portion, the hydrophobic tail having 6 to 30 carbon atoms and the nonionic hydrophilic portion having 10 to 300 carbon atoms, 0.001 to 10 inhibitor for decreasing static etch of the copper interconnects, 0 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0.001 to 10 complexing agent formed during polishing and balance water.

Abstract: The aqueous slurry is useful for chemical mechanical polishing a semiconductor substrate having copper interconnects. The slurry contains by weight percent, 0 to 25 oxidizing agent, 0.1 to 30 abrasive particles, 0.001 to 5 benzenecarboxylic acid, 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonionic hydrophilic portion and an anionic hydrophilic portion, the hydrophobic tail having 6 to 30 carbon atoms and the nonionic hydrophilic portion having 10 to 300 carbon atoms, 0.001 to 10 inhibitor for decreasing static etch of the copper interconnects, 0 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0 to 10 complexing agent formed during polishing and balance water.

Abstract: The aqueous slurry is useful for chemical mechanical polishing a semiconductor substrate having a tantalum-containing barrier layer and copper interconnects. The slurry includes by weight percent, 0 to 5 oxidizing agent, 0.1 to 25 silica particles, 0.001 to 3 polyvinyl pyrrolidone, 0.02 to 5 weight percent imine barrier removal agent selected from at least one of formamidine, formamidine salts, formamidine derivatives, guanidine, guanidine derivatives, guanidine salts and a mixture thereof, 0.02 to 5 weight percent carbonate, 0.01 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 10 complexing agent and balance water; and the aqueous slurry having a pH of 9 to 11.

Abstract: The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant wherein said adjuvant is s elected from a group consisting of a metal-anion compound, a metal-cation compound or mixtures thereof; abrasive particles at about 0.5% to about 55% by weight of the polishing composition; and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives generally improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.

Abstract: The aqueous slurry is useful for chemical mechanical polishing semiconductor substrates having copper interconnects. The aqueous slurry includes by weight percent, 0.01 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.001 to 3 polyvinyl pyrrolidone, 0.01 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0.001 to 10 complexing agent formed during polishing and balance water; and the aqueous slurry has a pH of at least 8.

Abstract: A polishing composition to remove metal from a dielectric layer by, either single step CMP polishing, or two step CMP polishing, the composition including, an aqueous solution provided with a substance having molecules with respective silanols, and a concentration of ions that solublize the silanols to adsorb on a hydrated surface of the dielectric layer during said polishing.

Abstract: The aqueous polishing composition is useful for polishing semiconductor substrates. The polishing solution comprises 0.001 to 2 wt % of a polyvinylalcohol copolymer, the polyvinylalcohol copolymer having a first component, a second component and a weight average molecular weight of 1,000 to 1,000,000 grams/mole, and the first component being 50 to 95 mole percent vinyl alcohol and the second component being more hydrophobic than the vinyl alcohol and 0.05 to 50 wt % silica abrasive particles; and the composition having a pH of 8 to 12.

Abstract: A polishing composition suitable for polishing semiconductor substrates comprises 0.001 to 2 wt % of a thermoplastic polymer; and 0.001 to 1 wt % of polyvinylpyrrolidone; wherein varying the weight ratio of thermoplastic polymer to the polyvinylpyrrolidone controls the removal rate of the non-ferrous interconnect.

Abstract: An aqueous slurry is useful for chemical mechanical planarizing a semiconductor substrate. The slurry includes by weight percent, 0.1 to 25 oxidizing agent, 0.1 to 20 silica particles having an average particle size of less than 200 nm, 0.005 to 0.8 polyvinyl pyrrolidone for coating the silica particles, 0.01 to 10 inhibitor, 0.001 to 10 complexing agent and a balance water and incidental impurities; and the aqueous slurry having a pH of at least 7.

Abstract: The present invention provides an aqueous composition useful for polishing copper on a semiconductor wafer comprising by weight percent 0.001 to 6 inhibitor for a nonferrous metal, 0.05 to 10 complexing agent for the metal, 0.01 to 25 copper removal agent for accelerating the removal of the copper, 0.5 to 40 abrasive, 0 to 10 selected from the group comprising, polyvinylpyrrolidone, thermoplastic polymer and mixtures thereof, wherein the copper removal agent is imidazole.

Abstract: An aqueous slurry is useful for chemical mechanical planarizing a semiconductor substrate. The slurry includes by weight percent, 0.1 to 25 oxidizing agent, 0.1 to 20 silica particles having an average particle size of less than 200 nm, 0.005 to 0.8 polyvinyl pyrrolidone for coating the silica particles, 0.01 to 10 inhibitor, 0.001 to 10 complexing agent and a balance water and incidental impurities; and the aqueous slurry having a pH of at least 7.

Abstract: According to the invention, an aqueous polishing composition comprises, abrasive particles and water of basic pH to remove a barrier layer by CMP using a polishing pad, the aqueous polishing composition further comprising, solely polar molecules each having multiple, polar bonding sites forming respective hydrogen bonds with silanol bonding groups on a hydrated silica dielectric layer of a semiconductor substrate, which form an hydrophilic protective film of the polar molecules that minimizes erosion.

Abstract: The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant wherein said adjuvant is s elected from a group consisting of a metal-anion compound, a metal-cation compound or mixtures thereof; abrasive particles at about 0.5% to about 55% by weight of the polishing composition; and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives generally improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.

Abstract: A polishing composition for CMP to remove a noble metal has a substance forming ligands with the noble metal for dissolution in the polishing composition, abrasive particles, and a surfactant comprising a dispersant of the abrasive particles to minimize formation of agglomerates of the abrasive particles, the abrasive particles being coated by the surfactant to provide surfactant coated abrasive particles that minimize scratching of a surface being abraded by the surfactant coated abrasive particles during CMP.

Abstract: A polishing composition for polishing a semiconductor wafer includes a source of chloride ions in solution, which reduces surface roughness of copper interconnects that are recessed in the wafer. High points on the copper interconnects are polished during a polishing operation, while the chloride ions migrate to electric fields concentrated at the high points. The chloride ions at the high points deter replating of copper ions from solution onto the high points. Instead the copper ions replate elsewhere on the interconnects, which reduces the surface roughness of the interconnects.

Abstract: According to the invention, an aqueous polishing composition comprises, abrasive particles and water of basic pH to remove a barrier layer by CMP using a polishing pad, the aqueous polishing composition farther comprising, solely polar molecules each having multiple, polar bonding sites forming respective hydrogen bonds with silanol bonding groups on a hydrated silicon dielectric layer of a semiconductor substrate, which form an hydrophilic protective film of the polar molecules that minimizes erosion.

Abstract: The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant wherein said adjuvant is selected from a group consisting of a metal-anion compound, a metal-cation compound or mixtures thereof; abrasive particles at about 0.5% to about 55% by weight of the polishing composition; and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives generally improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.

Abstract: A polishing composition to remove metal from a dielectric layer by, either single step CMP polishing, or two step CMP polishing, the composition including, an aqueous solution provided with a substance having molecules with respective silanols, and a concentration of ions that solublize the silanols to adsorb on a hydrated surface of the dielectric layer during said polishing.