Abstract: A semiconductor device includes an active region; a substrate; an epitaxial structure; an electrode structure, and the electrode structure including a plurality of ohmic contact electrodes; a first dielectric layer; an electrode connection line, the electrode connection line including an ohmic contact electrode connection line, and the ohmic contact electrode connection line being electrically connected to the ohmic contact electrode; an second dielectric layer; an electrode bonding pad, the electrode bonding pad including an ohmic contact electrode bonding pad, the ohmic contact electrode bonding pad being electrically connected to the ohmic contact electrode connection line, and at least a part of the ohmic contact electrode bonding pad being located in the active region, reducing a parasitic capacitance between the ohmic contact electrode bonding pad and the substrate, and further satisfying high requirements on an input capacitance and an output capacitance of the semiconductor device.