Patents by Inventor Qifeng Ruan

Qifeng Ruan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a patterned structure and device thereof
    Patent number: 11803125
    Abstract: There is provided a method of forming a patterned structure on a substrate. The method includes: forming a resist layer on the substrate, the resist layer being a negative tone resist; exposing a first portion of the resist layer to a focused electron beam to form a modified first portion, the modified first portion defining a boundary of a second portion of the resist layer; performing a plasma treatment on a surface of the resist layer, including on a surface of the second portion of the resist layer to form a modified surface portion of the second portion of the resist layer, resulting in a plasma treated resist layer; and performing development of the plasma treated resist layer to form the patterned structure on the substrate corresponding the second portion of the resist layer.
    Type: Grant
    Filed: July 2, 2020
    Date of Patent: October 31, 2023
    Assignee: Singapore University of Technology and Design
    Inventors: You Sin Tan, Joel Yang, Hailong Liu, Qifeng Ruan
  • METHOD OF FORMING A PATTERNED STRUCTURE AND DEVICE THEREOF
    Publication number: 20210405532
    Abstract: There is provided a method of forming a patterned structure on a substrate. The method includes: forming a resist layer on the substrate, the resist layer being a negative tone resist; exposing a first portion of the resist layer to a focused electron beam to form a modified first portion, the modified first portion defining a boundary of a second portion of the resist layer; performing a plasma treatment on a surface of the resist layer, including on a surface of the second portion of the resist layer to form a modified surface portion of the second portion of the resist layer, resulting in a plasma treated resist layer; and performing development of the plasma treated resist layer to form the patterned structure on the substrate corresponding the second portion of the resist layer.
    Type: Application
    Filed: July 2, 2020
    Publication date: December 30, 2021
    Inventors: You Sin Tan, Joel Yang, Hailong Liu, Qifeng Ruan