Patents by Inventor Qiging C. Ouyang

Qiging C. Ouyang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Strained complementary metal oxide semiconductor (CMOS) on rotated wafers and methods thereof
    Patent number: 7675055
    Abstract: The present invention provides CMOS structures including at least one strained pFET that is located on a rotated semiconductor substrate to improve the device performance. Specifically, the present invention utilizes a Si-containing semiconductor substrate having a (100) crystal orientation in which the substrate is rotated by about 45° such that the CMOS device channels are located along the <100> direction. Strain can be induced upon the CMOS structure including at least a pFET and optionally an nFET, particularly the channels, by forming a stressed liner about the FET, by forming embedded stressed wells in the substrate, or by utilizing a combination of embedded stressed wells and a stressed liner. The present invention also provides methods for fabricating the aforesaid semiconductor structures.
    Type: Grant
    Filed: October 26, 2007
    Date of Patent: March 9, 2010
    Assignee: International Business Machines Corporation
    Inventors: Meikei Ieong, Qiging C. Ouyang, Kern Rim