Abstract: The invention relates to a passivated contact type solar cell and a method for its manufacture. The method comprises the steps of: (i) preparing a substrate comprising: a first semiconductor layer, a tunnel oxide layer on the first semiconductor layer, a second semiconductor layer on the tunnel oxide layer, a first insulating layer on the second semiconductor layer, and a third semiconductor layer on the first semiconductor layer at the other side of the tunnel oxide layer, wherein the second semiconductor layer is 0.2 to 400 nm thick, wherein the first insulating layer comprises one or more openings; (ii) applying a conductive paste in the openings of the first insulating layer, the conductive paste comprising, (a) a conductive powder comprising silver (Ag) and palladium (Pd), (b) a glass frit, and (c) an organic vehicle; and (iii) firing the applied conductive paste to form an electrode. The glass frit may comprise 30 to 90 wt. % of at least one of PbO or Bi2O3, 1 to 50 wt. % of B2O3, 0.1 to 30 wt.

Abstract: The present invention provides a thick-film paste composition comprising an electrically conductive metal and an oxide composition dispersed in an organic medium. The paste composition is printed on the front side of a solar cell device having one or more insulating layers and fired to form an electrode, and is suitable for devices having both highly and lightly doped emitter structures.

Abstract: The present invention provides a thick-film paste composition comprising an electrically conductive metal and an oxide composition dispersed in an organic medium. The paste composition is printed on the front side of a solar cell device having one or more insulating layers and fired to form an electrode, and is suitable for devices having both highly and lightly doped emitter structures.

Abstract: Nanoparticle compositions and methods for synthesizing multinary chalcogenide CZTSSe nanoparticles containing Cu, Zn, and Sn in combination with S, Se or both are described. The nanoparticles may be incorporated into one or more ink solutions alone or in combination with other chalcogenide-based particles to make thin films useful for photovoltaic applications, including thin films from multilayer particle films having a composition profile. The composition and stoichiometry of the thin films may be further modified by subjecting the particle films to gas or liquid phase chalcogen exchange reactions.

Abstract: A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS2, CuIn(Sy,Se1-y)2, CuGaS2, CuGa(Sy, Se1-y)2, Cu(InxGa1-x)S2, and Cu(InxGa1-x)(Sy, Se1-y)2 nanoparticles and combinations thereof, wherein 0?x?1 and 0?y?1.

Abstract: Nanoparticle compositions and methods for synthesizing multinary chalcogenide CZTSSe nanoparticles containing Cu, Zn, and Sn in combination with S, Se or both are described. The nanoparticles may be incorporated into one or more ink solutions alone or in combination with other chalcogenide-based particles to make thin films useful for photovoltaic applications, including thin films from multilayer particle films having a composition profile. The composition and stoichiometry of the thin films may be further modified by subjecting the particle films to gas or liquid phase chalcogen exchange reactions.

Abstract: A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS2, CuIn(Sy,Se1?y)2, CuGaS2, CuGa(Sy,Se1?y)2, Cu(InxGa1?x)S2, and Cu(InxGa1?x)(Sy,Se1?y)2 nanoparticles and combinations thereof, wherein 0?x?1 and 1?y?0.

Abstract: In one aspect, a method for forming CIGSSe-based thin films includes depositing at least two layers of particles on a substrate. At least one layer includes a CIGSSe particle having a chemical composition denoted by Cu(InI-xGax)(S1-ySey)2 where 0?x ?1 and 0?y?1.

Abstract: A method for synthesizing a chalcogenide nanoparticle is provided. The method comprises reacting a metal component with an elemental chalcogen precursor in the presence of an organic solvent. The chalcogenide nanoparticles include ternary, binary and/or multinary chalcogenide nanoparticles and the metal component comprises metal halides or elemental metal precursors. The alkylamine solvent has a normal boiling temperature of above about 220° C. and an average particle size of from about 5 nm to about 1000 nm.

Abstract: A method for synthesizing a chalcogenide nanoparticle is provided. The method comprises reacting a metal component with an elemental chalcogen precursor in the presence of an organic solvent. The chalcogenide nanoparticles include ternary, binary and/or multinary chalcogenide nanoparticles and the metal component comprises metal halides or elemental metal precursors. The alkylamine solvent has a normal boiling temperature of above about 220° C. and an average particle size of from about 5 nm to about 1000 nm.