Patents by Inventor Qijie Guo

Qijie Guo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180301574
    Abstract: The present invention provides a thick-film paste composition comprising an electrically conductive metal and an oxide composition dispersed in an organic medium. The paste composition is printed on the front side of a solar cell device having one or more insulating layers and fired to form an electrode, and is suitable for devices having both highly and lightly doped emitter structures.
    Type: Application
    Filed: April 9, 2018
    Publication date: October 18, 2018
    Inventors: Carmine Torardi, Paul Douglas Vernooy, Qijie Guo, Brian J Laughlin, Giuseppe Scardera
  • Patent number: 9093190
    Abstract: Nanoparticle compositions and methods for synthesizing multinary chalcogenide CZTSSe nanoparticles containing Cu, Zn, and Sn in combination with S, Se or both are described. The nanoparticles may be incorporated into one or more ink solutions alone or in combination with other chalcogenide-based particles to make thin films useful for photovoltaic applications, including thin films from multilayer particle films having a composition profile. The composition and stoichiometry of the thin films may be further modified by subjecting the particle films to gas or liquid phase chalcogen exchange reactions.
    Type: Grant
    Filed: May 26, 2010
    Date of Patent: July 28, 2015
    Assignee: PURDUE RESEARCH FOUNDATION
    Inventors: Rakesh Agrawal, Hugh W. Hillhouse, Qijie Guo
  • Patent number: 8722447
    Abstract: A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS2, CuIn(Sy,Se1-y)2, CuGaS2, CuGa(Sy, Se1-y)2, Cu(InxGa1-x)S2, and Cu(InxGa1-x)(Sy, Se1-y)2 nanoparticles and combinations thereof, wherein 0?x?1 and 0?y?1.
    Type: Grant
    Filed: January 21, 2010
    Date of Patent: May 13, 2014
    Assignee: Purdue Research Foundation
    Inventors: Rakesh Agrawal, Hugh Hillhouse, Qijie Guo
  • Publication number: 20120138866
    Abstract: Nanoparticle compositions and methods for synthesizing multinary chalcogenide CZTSSe nanoparticles containing Cu, Zn, and Sn in combination with S, Se or both are described. The nanoparticles may be incorporated into one or more ink solutions alone or in combination with other chalcogenide-based particles to make thin films useful for photovoltaic applications, including thin films from multilayer particle films having a composition profile. The composition and stoichiometry of the thin films may be further modified by subjecting the particle films to gas or liquid phase chalcogen exchange reactions.
    Type: Application
    Filed: May 26, 2010
    Publication date: June 7, 2012
    Applicant: PURDUE RESEARCH FOUNDATION
    Inventors: Rakesh Agrawal, Hugh W. Hillhouse, Qijie Guo
  • Publication number: 20120122268
    Abstract: A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS2, CuIn(Sy,Se1?y)2, CuGaS2, CuGa(Sy,Se1?y)2, Cu(InxGa1?x)S2, and Cu(InxGa1?x)(Sy,Se1?y)2 nanoparticles and combinations thereof, wherein 0?x?1 and 1?y?0.
    Type: Application
    Filed: January 21, 2010
    Publication date: May 17, 2012
    Applicant: PURDUE RESEARCH FOUNDATION
    Inventors: Rakesh Agrawal, Hugh Hillhouse, Qijie Guo
  • Publication number: 20120115312
    Abstract: In one aspect, a method for forming CIGSSe-based thin films includes depositing at least two layers of particles on a substrate. At least one layer includes a CIGSSe particle having a chemical composition denoted by Cu(InI-xGax)(S1-ySey)2 where 0?x ?1 and 0?y?1.
    Type: Application
    Filed: May 26, 2010
    Publication date: May 10, 2012
    Applicant: PURDUE RESEARCH FOUNDATION
    Inventors: Rakesh Agrawal, Hugh W. Hillhouse, Qijie Guo, Mahaprasad Kar
  • Patent number: 7829059
    Abstract: A method for synthesizing a chalcogenide nanoparticle is provided. The method comprises reacting a metal component with an elemental chalcogen precursor in the presence of an organic solvent. The chalcogenide nanoparticles include ternary, binary and/or multinary chalcogenide nanoparticles and the metal component comprises metal halides or elemental metal precursors. The alkylamine solvent has a normal boiling temperature of above about 220° C. and an average particle size of from about 5 nm to about 1000 nm.
    Type: Grant
    Filed: May 21, 2007
    Date of Patent: November 9, 2010
    Assignee: Purdue Research Foundation
    Inventors: Qijie Guo, Rakesh Agrawal, Hugh W. Hillhouse
  • Publication number: 20100003187
    Abstract: A method for synthesizing a chalcogenide nanoparticle is provided. The method comprises reacting a metal component with an elemental chalcogen precursor in the presence of an organic solvent. The chalcogenide nanoparticles include ternary, binary and/or multinary chalcogenide nanoparticles and the metal component comprises metal halides or elemental metal precursors. The alkylamine solvent has a normal boiling temperature of above about 220° C. and an average particle size of from about 5 nm to about 1000 nm.
    Type: Application
    Filed: May 21, 2007
    Publication date: January 7, 2010
    Inventors: Qijie Guo, Rakesh Agrawal, Hugh W. Lane