Abstract: The embodiments disclosed a method for preparing a p-type ZnO-based material, the method conducted in a metal organic chemical vapor deposition (MOCVD) system, including cleaning a surface of a substrate and placing the substrate in a growth chamber of the metal organic chemical vapor deposition system, vacuumizing the growth chamber to 10?3-10?4 Pa, heating the substrate to 200-700° C., introducing an organic Zn source, an organic Na source and oxygen, and depositing the p-type ZnO-based material on the substrate. Na-doping is capable of greatly improving hole concentration and p-type stability in the ZnO-based material, and use of Na-doping technology in combination with MOCVD equipment provides a p-type ZnO-based material having excellent crystal quality and electrical and optical qualities.

Abstract: The present invention provides a method for preparing a p-type ZnO-based material, which method is conducted in a metal organic chemical vapor deposition system, including: cleaning the surface of a substrate and placing it in a growth chamber of the metal organic chemical vapor deposition system, vacuumizing the growth chamber to 10?3˜10?4 Pa, heating the substrate to 200˜700, introducing an organic Zn source, an organic Na source and oxygen, and depositing a p-type ZnO-based material on the substrate. Na-doping is capable of greatly improving hole concentration and p-type stability in the ZnO-based material, and use of Na-doping technology in combination with an MOCVD equipment can prepare a p-type ZnO-based material having excellent crystal quality and electrical and optical performances. Adopting an organic substance such as cyclopentadienyl sodium as a metal organic source for Na-doping can realize industrial production of the Na-doped p-type ZnO-based material.