Abstract: An integrated device, a semiconductor device, and an integrated device manufacturing method are provided, to improve capacitor integration density of the integrated device. The integrated device includes: A first dielectric layer is disposed on a first metal layer; the first metal layer, the first dielectric layer, and a gate metal layer on the first dielectric layer form a first capacitor; the gate metal layer, a second dielectric layer on the gate metal layer, and a second metal layer on the second dielectric layer form a second capacitor; and the first metal layer is connected to the second metal layer through a first conductor structure, so that the first capacitor and the second capacitor are connected in parallel.

Abstract: A frequency measurement system and method of a radio frequency (RF) signal. The frequency measurement system includes: a magnetic field source module, a light source module, an excitation module, a complementary metal-oxide-semiconductor (CMOS) camera, and a signal processing module; the excitation module is disposed in the magnetic field; the excitation module is disposed on an output light path of the light source module; the CMOS camera is disposed on an output light path of the excitation module; and the CMOS camera is connected to the signal processing module; the light source module is configured to emit a laser; the CMOS camera is configured to capture an excitation image when the laser enters the excitation module to which a to-be-tested RF signal is applied; and the signal processing module is configured to determine a frequency of the to-be-tested RF signal according to the excitation image.

Abstract: A frequency measurement system and method of a radio frequency (RF) signal. The frequency measurement system includes: a magnetic field source module, a light source module, an excitation module, a complementary metal-oxide-semiconductor (CMOS) camera, and a signal processing module; the excitation module is disposed in the magnetic field; the excitation module is disposed on an output light path of the light source module; the CMOS camera is disposed on an output light path of the excitation module; and the CMOS camera is connected to the signal processing module; the light source module is configured to emit a laser; the CMOS camera is configured to capture an excitation image when the laser enters the excitation module to which a to-be-tested RF signal is applied; and the signal processing module is configured to determine a frequency of the to-be-tested RF signal according to the excitation image.