Patents by Inventor Qimin WANG

Qimin WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220234114
    Abstract: A cutting tool for machining titanium alloy or superalloy includes a Me-B-N coating. The Me-B-N coating is Me1-B-N; Me1 is one or more selected from transition metal elements Hf, V, Nb, Ta and Mo, and the atomic percentage of each element is: Me1: 8-40%, B: 15-60%, and N: 10-65%; and the Me-B-N coating includes Me1Nx phase and BN phase; or, the Me-B-N coating is Me1-Me2-B-N, Me1 is one or more selected from transition metal elements Hf, V, Nb, Ta and Mo; Me2 is one or more selected from transition metal elements Ti, Zr, Cr, and W; and the atomic percentage of each element is: Me1: 4-36%, Me2: 4-36%, B: 15-60%, and N: 10-65%; and the Me-B-N coating includes Me1Nx phase, Me2Nx phase and BN phase.
    Type: Application
    Filed: April 15, 2022
    Publication date: July 28, 2022
    Inventors: Chengyong WANG, Haisheng LIN, Lijuan ZHENG, Tongchun KUANG, Yang DENG, Qimin WANG
  • Patent number: 10941479
    Abstract: An ion source enhanced AlCrSiN coating for a cutting tool is provided. The ion source enhanced AlCrSiN coaling has gradient Si content and grain size, including sequentially an AlCrSiN working layer, an interlayer and an AlCrN bottom layer in order from a surface of the coating to a substrate, wherein from the AlCrN bottom layer to the AlCrSiN working layer, Si content in the interlayer is gradually increased, and the interlayer has a texture that changes from coarse columnar crystals to fine nanocrystals and amorphous body. A texture of the coating, in which the grain size is gradually decreased, sequentially includes coarse columnar crystals, fine columnar crystals and fine equiaxed crystals. A method for preparing the ion source enhanced AlCrSiN coating with the gradient Si content and grain size is provided as well as a cutting tool having the coating deposited thereon.
    Type: Grant
    Filed: December 24, 2018
    Date of Patent: March 9, 2021
    Assignees: ANHUI DUOJINTUCENG TECHNOLOGY CO. LTD., ANHUI HUALING AUTOMOBILE CO., LTD., ANHUI UNIVERISTY OF TECHNOLOGY
    Inventors: Shihong Zhang, Fei Cai, Qimin Wang, Lin Zhang, Biao Wang, Lu Wang, Ying Gao, Wei Fang, Jiagang Liang
  • Publication number: 20200239996
    Abstract: An ion source enhanced AlCrSiN coating for a cutting tool is provided. The ion source enhanced AlCrSiN coaling has gradient Si content and grain size, including sequentially an AlCrSiN working layer, an interlayer and an AlCrN bottom layer in order from a surface of the coating to a substrate, wherein from the AlCrN bottom layer to the AlCrSiN working layer, Si content in the interlayer is gradually increased, and the interlayer has a texture that changes from coarse columnar crystals to fine nanocrystals and amorphous body. A texture of the coating, in which the grain size is gradually decreased, sequentially includes coarse columnar crystals, fine columnar crystals and fine equiaxed crystals. A method for preparing the ion source enhanced AlCrSiN coating with the gradient Si content and grain size is provided as well as a cutting tool having the coating deposited thereon.
    Type: Application
    Filed: December 24, 2018
    Publication date: July 30, 2020
    Applicants: Anhui University of Technology, Anhui DuojinTuceng Technology Co. Ltd., Anhui Hualing Automobile Co., Ltd.
    Inventors: Shihong ZHANG, Fei CAI, Qimin WANG, Lin ZHANG, Biao WANG, Lu WANG, Ying GAO, Wei FANG, Jiagang LIANG
  • Patent number: 9708224
    Abstract: The invention proposed a novel hot pressing flowing sintering method to fabricate textured ceramics. The perfectly 2-dimensional textured Si3N4 ceramics (Lotgering orientation factor fL 0.9975) were fabricated by this method. During the initial sintering stage, the specimen flowed along the plane which is perpendicular to the hot pressing direction under pressure, through the controlling of the graphite die movement. The rod-like ?-Si3N4 nuclei was easily to texture during the flowing process, due to the small size of the ?-Si3N4 nuclei and the high porosity of the flowing specimen. After aligned, the ?-Si3N4 grains grew along the materials flowing direction with little constraint. textured Si3N4 ceramics fabricated by this invention also showed high aspect ratio. Compared to the conventional hot-forging technique which contained the sintering and forging processes, hot pressing flowing sintering proposed is simpler and lower cost to fabricate textured Si3N4.
    Type: Grant
    Filed: August 10, 2015
    Date of Patent: July 18, 2017
    Assignees: DONGGUAN SOUTH CHINA DESIGN AND INNOVATION INST., GUANGDONG UNIVERSITY OF TECHNOLOGY
    Inventors: Shanghua Wu, Qiangguo Jiang, Weiming Guo, Shangxian Gu, Maopeng Zhou, Wei Liu, Lixia Cheng, Bo Wang, Chengyong Wang, Qimin Wang
  • Publication number: 20170015593
    Abstract: The invention proposed a novel hot pressing flowing sintering method to fabricate textured ceramics. The perfectly 2-dimensional textured Si3N4 ceramics (Lotgering orientation factor fL 0.9975) were fabricated by this method. During the initial sintering stage, the specimen flowed along the plane which is perpendicular to the hot pressing direction under pressure, through the controlling of the graphite die movement. The rod-like ?-Si3N4 nuclei was easily to texture during the flowing process, due to the small size of the ?-Si3N4 nuclei and the high porosity of the flowing specimen. After aligned, the ?-Si3N4 grains grew along the materials flowing direction with little constraint. textured Si3N4 ceramics fabricated by this invention also showed high aspect ratio. Compared to the conventional hot-forging technique which contained the sintering and forging processes, hot pressing flowing sintering proposed is simpler and lower cost to fabricate textured Si3N4.
    Type: Application
    Filed: August 10, 2015
    Publication date: January 19, 2017
    Inventors: Shanghua Wu, Qiangguo Jiang, Weiming Guo, Shangxian Gu, Maopeng Zhou, Wei Liu, Lixia Cheng, Bo Wang, Chengyong Wang, Qimin Wang
  • Patent number: 9290847
    Abstract: The present invention provides an Al2O3 coated Si3N4 cutting tool comprising a Si3N4 based substrate body and a coating layer on the substrate body, wherein the coating layer has at least one Al2O3 coating layer consisting of amorphous Al2O3 or nanocrystalline ?-, ?-, or ?-Al2O3. The hard and wear resistant refractory coating is deposited onto the Si3N4-based substrate body by reactive sputtering using bipolar pulsed DMS technique or dual magnetron sputtering method at substrate temperatures of 300-700° C. During the deposition, preferably, the substrate temperature is controlled to achieve the desired crystal structure of the coating. To form amorphous Al2O3 coating on the surface of the substrates, the deposition temperature can be controlled from 300 to 500° C.; on the other hand, to form nanocrystalline ?-, ?-, or ?-Al2O3, the deposition temperature can be controlled in the range of 500-700° C.
    Type: Grant
    Filed: December 23, 2013
    Date of Patent: March 22, 2016
    Assignee: GUANGDONG UNIVERSITY OF TECHNOLOGY
    Inventors: Shanghua Wu, Ying Long, Qimin Wang, Chengyong Wang
  • Publication number: 20140178659
    Abstract: The present invention provides an Al2O3 coated Si3N4 cutting tool comprising a Si3N4 based substrate body and a coating layer on the substrate body, wherein the coating layer has at least one Al2O3 coating layer consisting of amorphous Al2O3 or nanocrystalline ?-, ?-, or ?-Al2O3. The hard and wear resistant refractory coating is deposited onto the Si3N4-based substrate body by reactive sputtering using bipolar pulsed DMS technique or dual magnetron sputtering method at substrate temperatures of 300-700° C. During the deposition, preferably, the substrate temperature is controlled to achieve the desired crystal structure of the coating. To form amorphous Al2O3 coating on the surface of the substrates, the deposition temperature can be controlled from 300 to 500° C.; on the other hand, to form nanocrystalline ?-, ?-, or ?-Al2O3, the deposition temperature can be controlled in the range of 500-700° C.
    Type: Application
    Filed: December 23, 2013
    Publication date: June 26, 2014
    Inventors: Shanghua WU, Ying LONG, Qimin WANG, Chengyong WANG