Abstract: The invention relates to a dielectric composition and a process for forming an integrated circuit using the composition. The dielectric composition comprises a polymer precursor that upon heating to a cure temperature cross-links to form an organic polysilica layer and a sufficient amount of porogen that the layer has a porosity of from about 5% to about 80%. The porogen is non-reactive with the polymer precursor. Upon heating to a decomposition temperature, the porogen decomposes to form a gas that diffuses out of the layer.

Abstract: A dielectric film comprising silicon, oxygen and carbon having a low dielectric constant, superior thermal stability and adhesion to commonly employed semiconductor materials is described. The film is formed from a polyorganosilane polymer applied to a substrate and subsequently cured in a two-step or three-step cure process. The film is advantageously suited for, among other things, damascene, double damascene and interlayer dielectric applications.