Abstract: A display substrate and a display apparatus are provided. The display substrate includes a base substrate, a first conductive layer, a second conductive layer and an insulation layer. The first conductive layer is on a side of the base substrate and includes a first conductive part extending in a first direction, the second conductive layer is on a side of the first conductive layer facing away from the base substrate, and the insulation layer is located between the first conductive layer and the second conductive layer. At least one first conductive part includes a first hollowed-out portion including a plurality of groove structures distributed in a second direction and extending in the first direction. The first direction and the second direction produce angles.

Abstract: In an embodiment, a switching circuit is provided that includes a Group III nitride-based semiconductor body including a first monolithically integrated Group III nitride-based transistor device and a second monolithically integrated Group III nitride based transistor device that are coupled to form a half-bridge circuit and are arranged on a common foreign substrate having a common doping level. The switching circuit is configured to operate the half-bridge circuit at a voltage of at least 300V.

Abstract: In an embodiment, a switching circuit is provided that includes a Group III nitride-based semiconductor body including a first monolithically integrated Group III nitride-based transistor device and a second monolithically integrated Group III nitride based transistor device that are coupled to form a half-bridge circuit and are arranged on a common foreign substrate having a common doping level. The switching circuit is configured to operate the half-bridge circuit at a voltage of at least 300 V.

Abstract: In an embodiment, a switching circuit is provided that includes a Group III nitride-based semiconductor body including a first monolithically integrated Group III nitride-based transistor device and a second monolithically integrated Group III nitride based transistor device that are coupled to form a half-bridge circuit and are arranged on a common foreign substrate having a common doping level. The switching circuit is configured to operate the half-bridge circuit at a voltage of at least 300V.

Abstract: An electromagnetic acoustic transducer (EMAT) system for inspecting a part includes an EMAT sensor and a power supply for supplying an output power to the EMAT sensor. The power supply includes a DC/DC converter to boost an input DC voltage into a boosted DC voltage, a DC/AC inverter having Silicon Carbide (SiC) Mosfet power switches to invert the boosted DC voltage into an AC square voltage, and an output filter to filter the AC square voltage into an AC sinusoidal voltage. The AC sinusoidal voltage is the output power from the power supply to the EMAT sensor.

Abstract: An electromagnetic acoustic transducer (EMAT) system for inspecting a part includes an EMAT sensor and a power supply for supplying an output power to the EMAT sensor. The power supply includes a DC/DC converter to boost an input DC voltage into a boosted DC voltage, a DC/AC inverter having Silicon Carbide (SiC) Mosfet power switches to invert the boosted DC voltage into an AC square voltage, and an output filter to filter the AC square voltage into an AC sinusoidal voltage. The AC sinusoidal voltage is the output power from the power supply to the EMAT sensor.

Abstract: A power conversion system includes at least one multi-level power converter and a controller coupled to the at least one multi-level power converter. The controller includes a first CMV injection module and a second CMV injection module. The first CMV injection module generates a first CMV signal for modifying at least one voltage command to achieve a first function in association with operation of the power conversion system. The second CMV injection module generates a second CMV signal based at least in part on a three-level CMV limit either for modifying the at least one voltage command or for further modifying the at least one modified voltage command to achieve a second function in association with operation of the power conversion system.

Abstract: A power conversion system includes at least one multi-level power converter and a controller coupled to the at least one multi-level power converter. The controller includes a first CMV injection module and a second CMV injection module. The first CMV injection module generates a first CMV signal for modifying at least one voltage command to achieve a first function in association with operation of the power conversion system. The second CMV injection module generates a second CMV signal based at least in part on a local limit either for modifying the at least one voltage command or for further modifying the at least one modified voltage command to achieve a second function in association with operation of the power conversion system.

Abstract: A power conversion system includes at least one multi-level power converter and a controller coupled to the at least one multi-level power converter. The controller includes a first CMV injection module and a second CMV injection module. The first CMV injection module generates a first CMV signal for modifying at least one voltage command to achieve a first function in association with operation of the power conversion system. The second CMV injection module generates a second CMV signal based at least in part on a three-level CMV limit either for modifying the at least one voltage command or for further modifying the at least one modified voltage command to achieve a second function in association with operation of the power conversion system.

Abstract: A power conversion system includes at least one multi-level power converter and a controller coupled to the at least one multi-level power converter. The controller includes a first CMV injection module and a second CMV injection module. The first CMV injection module generates a first CMV signal for modifying at least one voltage command to achieve a first function in association with operation of the power conversion system. The second CMV injection module generates a second CMV signal based at least in part on a local limit either for modifying the at least one voltage command or for further modifying the at least one modified voltage command to achieve a second function in association with operation of the power conversion system.

Abstract: This invention concerns a medical non-woven fabric containing inorganic oxides complex powder. The inorganic oxides complex powder consists of 80-95% (weight) of TiO.sub.2, 2-10% (weight) of Al.sub.2 O.sub.3 and 1-10% (weight) of SiO.sub.2. This medical non-woven fabric can improve microcirculation remarkably and has special effect of dephlogistication, detumescence and speeding up healing of wounds. Thus, it is suitable for supplementary treatment of tumefaction, surface wounds and fracture.