Patents by Inventor Qing Min Wang

Qing Min Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Precursor compositions and methods
    Publication number: 20090017208
    Abstract: Compositions including an amido-group-containing vapor deposition precursor and a stabilizing additive are provided. Such compositions have improved thermal stability and increased volatility as compared to the amido-group-containing vapor deposition precursor itself. These compositions are useful in the deposition of thin films, such as by atomic layer deposition.
    Type: Application
    Filed: March 3, 2008
    Publication date: January 15, 2009
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Stephen J. Manzik, Qing Min Wang
  • Organometallic compounds
    Publication number: 20080305260
    Abstract: Heteroleptic organometallic compounds containing at least one formamidinate ligand are provided. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liquid injection. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds or their solutions in organic solvents.
    Type: Application
    Filed: June 5, 2008
    Publication date: December 11, 2008
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Huazhi Li, Qing Min Wang
  • Organometallic compounds
    Publication number: 20080026577
    Abstract: Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.
    Type: Application
    Filed: October 4, 2006
    Publication date: January 31, 2008
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Qing Min Wang
  • Organometallic compounds
    Publication number: 20080026578
    Abstract: Organometallic compounds containing an electron donating group-substituted alkenyl ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.
    Type: Application
    Filed: September 29, 2006
    Publication date: January 31, 2008
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Qing Min Wang
  • Organometallic compounds
    Publication number: 20080026576
    Abstract: Certain organometallic compounds in the form of imino complexes are provided. Such complexes are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.
    Type: Application
    Filed: September 29, 2006
    Publication date: January 31, 2008
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Qing Min Wang
  • Acid copper electroplating solutions
    Publication number: 20040187731
    Abstract: Improved acid copper electroplating bath compositions are disclosed. The improved bath solutions contain at least one of a carrier; a water-soluble, mercapto-containing organic brightener; and a leveler which comprises an organic compound containing single or multiply charged centers in acidic bath solution. These electroplating bath compositions are used to copper plate advanced interconnects on semiconductor devices.
    Type: Application
    Filed: April 14, 2004
    Publication date: September 30, 2004
    Inventors: Qing Min Wang, Weiji Huang, Miu Ling Lau, Carol Hsiuchin Liu, Ce Ma, Edward K. Chang, Wenpin Ho, Richard C. Paciej
  • Process for stripping amine borane complex from an electroless plating solution
    Patent number: 6790364
    Abstract: A process for separation and environmentally benign disposal of amine borane complexes includes adsorbing amine borane complex onto a solid support, treating the adsorbed amine borane complex with an oxidizing agent in situ on the adsorbent thereby forming decomposition products without the formation of hydrogen gas, and collecting the decomposition products for disposal thereof.
    Type: Grant
    Filed: September 27, 2002
    Date of Patent: September 14, 2004
    Assignee: The BOC Group, Inc.
    Inventors: Qing Min Wang, Juzer Jangbarwala
  • Process for stripping amine borane complex from an electroless plating solution
    Publication number: 20040060874
    Abstract: A process for separation and environmentally benign disposal of amine borane complexes includes adsorbing amine borane complex onto a solid support, treating the adsorbed amine borane complex with an oxidizing agent in situ on the adsorbent thereby forming decomposition products without the formation of hydrogen gas, and collecting the decomposition products for disposal thereof.
    Type: Application
    Filed: September 27, 2002
    Publication date: April 1, 2004
    Inventors: Qing Min Wang, Juzer Jangbarwala
  • Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film
    Patent number: 6649540
    Abstract: Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated surfaces are disclosed. A substituted organosilane compound precursor is applied to the surface by chemical vapor deposition where it will react with the surface and form a film which will have a dielectric constant, K, less than 2.5.
    Type: Grant
    Filed: November 2, 2001
    Date of Patent: November 18, 2003
    Assignee: The BOC Group, Inc.
    Inventors: Qing Min Wang, Ce Ma
  • Asymmetric organocyclosiloxanes and their use for making organosilicon polymer low-k dielectric film
    Patent number: 6572923
    Abstract: Methods for synthesizing extra low-k CVD precursors and forming extra low-k dielectric films on the surfaces of semiconductors wafers and integrated circuits are disclosed. An asymmetric organocyclosiloxane compound is applied to the surface where it will react with and form a film that will have a dielectric constant, k, from 2.0 to 2.5.
    Type: Grant
    Filed: January 9, 2002
    Date of Patent: June 3, 2003
    Assignee: The BOC Group, Inc.
    Inventors: Ce Ma, Qing Min Wang
  • Metallo-organic polymers for gas separation and purification
    Patent number: 6491740
    Abstract: The present invention provides for methods and compositions for gas separation and purification utilizing a metallo-organic polymer adsorbent in processes for separating carbon dioxide, water, nitrogen oxides and hydrocarbons from gas streams.
    Type: Grant
    Filed: July 11, 2000
    Date of Patent: December 10, 2002
    Assignee: The BOC Group, Inc.
    Inventors: Qing Min Wang, Dongmin Shen, Martin Bülow, Miu Ling Lau, Frank R. Fitch, Shuguang Deng
  • Asymmetric organocyclosiloxanes and their use for making organosilicon polymer low-k dielectric film
    Publication number: 20020132408
    Abstract: Methods for synthesizing extra low-k CVD precursors and forming extra low-k dielectric films on the surfaces of semiconductors wafers and integrated circuits are disclosed. An asymmetric organocyclosiloxane compound is applied to the surface where it will react with and form a film that will have a dielectric constant, k, from 2.0 to 2.5.
    Type: Application
    Filed: January 9, 2002
    Publication date: September 19, 2002
    Inventors: Ce Ma, Qing Min Wang
  • Low-K dielectric constant CVD precursors formed of cyclic siloxanes having in-ring SI—O—C, and uses thereof
    Patent number: 6440876
    Abstract: Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated circuits are disclosed. A Si—O—C-in-ring cyclic siloxane precursor compound is applied to the surface by chemical vapor deposition where it will react with the surface and form a film having a dielectric constant, k, less than 2.5. The compound generally has the formula (—O—R1—O—)SiR2R3 or the formula (—R1—O—)SiR2R3.
    Type: Grant
    Filed: October 5, 2001
    Date of Patent: August 27, 2002
    Assignee: The BOC Group, Inc.
    Inventors: Qing Min Wang, Ce Ma
  • Oxygen-selective adsorbents
    Patent number: 6436171
    Abstract: The present invention provides for novel solid state O2-selective metal complex-based adsorbents and their utility for separating oxygen from a gas stream. In particular, the invention provides for an adsorption complex which contains four-coordinate O2-selective metal complexes including oligomeric/polymeric metal complexes, and organic base-containing polymers supported on porous materials.
    Type: Grant
    Filed: June 12, 2000
    Date of Patent: August 20, 2002
    Assignee: The BOC Group, Inc.
    Inventors: Qing Min Wang, Dongmin Shen, Miu Ling Lau, Martin Bülow, Frank R. Fitch, Norberto O. Lemcoff, Philip Connolly
  • Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film
    Publication number: 20020076944
    Abstract: Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated surfaces are disclosed. A substituted organosilane compound precursor is applied to the surface by chemical vapor deposition where it will react with the surface and form a film which will have a dielectric constant, K, less than 2.5.
    Type: Application
    Filed: November 2, 2001
    Publication date: June 20, 2002
    Inventors: Qing Min Wang, Ce Ma
  • Low-k dielectric CVD precursors and uses thereof
    Publication number: 20020072220
    Abstract: Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated circuits are disclosed. A Si—O—C-in-ring cyclic siloxane precursor compound is applied to the surface by chemical vapor deposition where it will react with the surface and form a film having a dielectric constant, k, less than 2.5. The compound generally has the formula (—O—R1—O—)SiR2R3 or the formula (—R1—O—)SiR2R3.
    Type: Application
    Filed: October 5, 2001
    Publication date: June 13, 2002
    Inventors: Qing Min Wang, Ce Ma
  • Adsorbents and adsorptive separation process
    Patent number: 6350298
    Abstract: Novel compositions of molecular sieve adsorbents are provided in which at least 50% of the exchangeable cations are selected from those of Li, Ca, Ag and Cu and which have within their pore system metal oxide, metal oxide precursors or mixtures thereof. These compositions are useful for the separation of gases and, in particular, the separation of nitrogen from air to produce oxygen or oxygen-enriched gas.
    Type: Grant
    Filed: October 26, 1999
    Date of Patent: February 26, 2002
    Assignee: The BOC Group, Inc.
    Inventors: Bao-Lian Su, Martin Bulow, Jean-Luc Blin, Adeola F. Ojo, Sudhakar Jale, Dongmin Shen, Qing Min Wang, Frank R. Fitch