Abstract: An ion implantation method is disclosed in this invention. The disclosed method is for implanting a target wafer with ions extracted from an ion source traveling along an original ion beam path. The method includes steps of a) employing a set of deceleration electrodes disposed along the original ion beam path before the target wafer for decelerating and deflecting the ion beam to the target wafer; and b) employing a charged particle deflecting means disposed between the ion source and the set of deceleration electrodes for deflecting the ion beam away from original ion beam path and projecting to the set of electrodes with an incident angle for the set of electrodes to deflect the ion beam back to the original ion beam path for implanting the target wafer.

Abstract: One method for purifying a chitosan starting material includes contacting it with at least one treatment agent selected from a protein-complexing agent, a metal-chelating agent, and a metal-complexing agent under pH conditions effective for forming a water insoluble chitosan precipitate and at least one water soluble material selected from a water soluble protein complex, a water soluble metal chelate, and a water soluble metal complex. Another variant involves solubilizing the chitosan starting material in an aqueous solution to produce an intermediate chitosan material. The intermediate chitosan material is contacted with a deproteinization agent and/or a demetallization agent under pH conditions effective for forming a water insoluble chitosan precipitate and at least one water soluble material that includes the pre-existing impurity. In both methods, the water insoluble chitosan precipitate and the water soluble material are separated resulting in a purified chitosan material.

Abstract: One method for purifying a chitosan starting material includes contacting it with at least one treatment agent selected from a protein-complexing agent, a metal-chelating agent, and a metal-complexing agent under pH conditions effective for forming a water insoluble chitosan precipitate and at least one water soluble material selected from a water soluble protein complex, a water soluble metal chelate, and a water soluble metal complex. Another variant involves solubilizing the chitosan starting material in an aqueous solution to produce an intermediate chitosan material. The intermediate chitosan material is contacted with a deproteinization agent and/or a demetallization agent under pH conditions effective for forming a water insoluble chitosan precipitate and at least one water soluble material that includes the pre-existing impurity. In both methods, the water insoluble chitosan precipitate and the water soluble material are separated resulting in a purified chitosan material.

Abstract: An ion implantation method is disclosed in this invention. The disclosed method is for implanting a target wafer with ions extracted from an ion source traveling along an original ion beam path. The method includes steps of a) employing a set of deceleration electrodes disposed along the original ion beam path before the target wafer for decelerating and deflecting the ion beam to the target wafer; and b) employing a charged particle deflecting means disposed between the ion source and the set of deceleration electrodes for deflecting the ion beam away from original ion beam path and projecting to the set of electrodes with an incident angle for the set of electrodes to deflect the ion beam back to the original ion beam path for implanting the target wafer.