Abstract: Embodiments of the invention provide a sense amplifier, a SRAM chip comprising the sense amplifier and a method of performing read operation on the SRAM chip. The sense amplifier according to embodiments of the invention comprises an additional driving assist portion, which further takes a global data bus as input, the driving assist portion is configured to enable the sense amplifier to provide assisted driving for other sense amplifiers. With the solution according to embodiments of the invention, driving capability of a sense amplifier on global data bus can be enhanced.

Abstract: Embodiments of the invention provide a sense amplifier, a SRAM chip comprising the sense amplifier and a method of performing read operation on the SRAM chip. The sense amplifier according to embodiments of the invention comprises an additional driving assist portion, which further takes a global data bus as input, the driving assist portion is configured to enable the sense amplifier to provide assisted driving for other sense amplifiers. With the solution according to embodiments of the invention, driving capability of a sense amplifier on global data bus can be enhanced.

Abstract: Embodiments of the invention provide a sense amplifier, a SRAM chip comprising the sense amplifier and a method for conducting read operation on a SRAM cell. The sense amplifier according to an embodiment of the invention comprises a cross coupling circuit, a tail current transistor and an output stage, wherein source of the tail current transistor is connected to a negative level. With the scheme according to embodiments of the invention, speed of the sense amplifier can be enhanced, thereby increasing read speed of the SRAM chip.