Abstract: A method of dicing a wafer includes positioning the wafer with its top side on a tape material. The wafer includes a plurality of die separated by scribe streets. A first pass being a first infrared (IR) laser beam is directed at the bottom side with a point of entry within the scribe streets. The first IR laser beam is focused with a focus point embedded within a thickness of the wafer, and has parameters selected to form an embedded crack line within the wafer. The embedded crack line does not reach the top side surface. A second pass being a second IR laser beam is directed at the bottom side having parameters selected to form a second crack line that that has a spacing relative to the embedded crack line, and the second IR laser beam causes the embedded crack line to be extended to the top side surface.

Abstract: In examples, a method for manufacturing a semiconductor die comprises, prior to forming circuitry on a semiconductor wafer, forming a horizontal array of cracks in an interior of the wafer using a laser. The method also includes, after forming the horizontal array of cracks, forming circuitry on a device side of the wafer. The method includes forming conductive bumps on the device side of the wafer.

Abstract: One example provides a method that includes directing a laser beam at a first side surface of a semiconductor substrate at an entry point along a respective scribe street thereof. The substrate includes a plurality of dies having circuitry at the first side surface and separated from one another by respective scribe streets. The laser beam is focused within the substrate to form a modified region and a crack extending from the modified region towards at least one of the first and second side surfaces. The modified region is closer to the first side surface than a second side surface that is opposite the first side surface. The method also includes applying tape on the first side surface after directing the laser beam, and backgrinding to reduce a thickness of the substrate from the second side surface and provide a thinned second side surface that intersects an extension of the crack.

Abstract: A method of manufacturing a semiconductor package includes forming a plurality of first cuts in a semiconductor wafer. The first cuts extend through a first portion of a thickness of the semiconductor wafer and include a first set of first cuts that are parallel to one another and a second set of first cuts that are parallel to one another and perpendicular to the first set of first cuts. In addition, the method includes forming a plurality of second cuts in the wafer after forming the first cuts. The second cuts are vertically aligned with the first cuts and extend through a second portion of the thickness of the semiconductor wafer.

Abstract: A method of dicing a wafer includes positioning the wafer with its top side on a tape material. The wafer includes a plurality of die separated by scribe streets. A first pass being a first infrared (IR) laser beam is directed at the bottom side with a point of entry within the scribe streets. The first IR laser beam is focused with a focus point embedded within a thickness of the wafer, and has parameters selected to form an embedded crack line within the wafer. The embedded crack line does not reach the top side surface. A second pass being a second IR laser beam is directed at the bottom side having parameters selected to form a second crack line that that has a spacing relative to the embedded crack line, and the second IR laser beam causes the embedded crack line to be extended to the top side surface.