Patents by Inventor Qing Rao

Qing Rao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230272069
    Abstract: The present invention discloses a nucleic acid molecule for encoding a chimeric antigen receptor targeting CD22 and CD19. The chimeric antigen receptor of the present invention can be used for treatment of CD19+ and CD22+ B-cell hematological tumors, as well as combined treatment with CD19 CAR-T cells or CD22 CAR-T cells.
    Type: Application
    Filed: February 28, 2022
    Publication date: August 31, 2023
    Inventors: Jianxiang WANG, Min WANG, Yu ZHANG, Yingxi XU, Qing RAO, Xiaolong LIAO
  • Patent number: 10199109
    Abstract: Multiple embodiments of a low power sense amplifier for use in a flash memory system are disclosed. In some embodiments, the loading on a sense amplifier can be adjusted by selectively attaching one or more bit lines to the sense amplifier, where the one or more bit lines each is coupled to an extraneous memory cell.
    Type: Grant
    Filed: December 7, 2016
    Date of Patent: February 5, 2019
    Assignee: Silicon Storage Technology, Inc.
    Inventors: Xiaozhou Qian, Xiao Yan Pi, Kai Man Yue, Qing Rao, Lisa Bian
  • Publication number: 20170194055
    Abstract: Multiple embodiments of a low power sense amplifier for use in a flash memory system are disclosed. In some embodiments, the loading on a sense amplifier can be adjusted by selectively attaching one or more bit lines to the sense amplifier, where the one or more bit lines each is coupled to an extraneous memory cell.
    Type: Application
    Filed: December 7, 2016
    Publication date: July 6, 2017
    Inventors: Xiaozhou Qian, Xiao Yan Pi, Kai Man Yue, Qing Rao, Lisa Bian
  • Patent number: 9564238
    Abstract: The present invention relates to a flash memory device that uses dummy memory cells as source line pull down circuits. In one embodiment, when a memory cell is in read mode or erase mode, its source line is coupled to ground through a bitline of a dummy memory cell, which in turn is coupled to ground. When the memory cell is in program mode, the bitline of the dummy memory cell is coupled to an inhibit voltage, which places the dummy memory cell in a program inhibit mode that maintains the dummy memory cell in erased state.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: February 7, 2017
    Assignee: Silicon Storage Technology, Inc.
    Inventors: Ning Bai, Hieu Van Tran, Qing Rao, Parviz Ghazavi, Kai Man Yue
  • Patent number: 8833431
    Abstract: The present invention discloses an aluminum alloy material, which is made of raw material of aluminum alloy. The raw material of aluminum alloy consists of the following constituents by percentage of weight: graphene: 0.1%˜1%, carbon nano tube: 1%˜5%, the rest being Al. The aluminum alloy material of the present invention has a good performance of heat dissipation, the thermal conductivity is higher than 200 W/m. Meanwhile, the present invention further provides a method of manufacturing aluminum alloy backboard, in which method, the raw material of aluminum alloy is heated and melted in a heating furnace, afterwards, the raw material of aluminum alloy after melting is formed into an aluminum alloy backboard by die-casting, in this way, the utilization rate of material is increased and the manufacturing cost of the backboard is reduced.
    Type: Grant
    Filed: December 30, 2010
    Date of Patent: September 16, 2014
    Assignee: Enraytek Optoelectronics Co., Ltd.
    Inventors: Deyuan Xiao, Richard Rugin Chang, Mengjan Cherng, Qing Rao
  • Publication number: 20130216425
    Abstract: The present invention discloses an aluminum alloy material, which is made of raw material of aluminum alloy. The raw material of aluminum alloy consists of the following constituents by percentage of weight: graphene: 0.1%˜1%, carbon nano tube: 1%˜5%, the rest being Al. The aluminum alloy material of the present invention has a good performance of heat dissipation, the thermal conductivity is higher than 200 W/m. Meanwhile, the present invention further provides a method of manufacturing aluminum alloy backboard, in which method, the raw material of aluminum alloy is heated and melted in a heating furnace, afterwards, the raw material of aluminum alloy after melting is formed into an aluminum alloy backboard by die-casting, in this way, the utilization rate of material is increased and the manufacturing cost of the backboard is reduced.
    Type: Application
    Filed: December 30, 2010
    Publication date: August 22, 2013
    Inventors: Deyuan Xiao, Richard Rugin Chang, Mengjan Cherng, Qing Rao