Patents by Inventor Qing Shan J. Niu

Qing Shan J. Niu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7109249
    Abstract: A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.
    Type: Grant
    Filed: July 16, 2004
    Date of Patent: September 19, 2006
    Assignee: Dow Global Technologies Inc.
    Inventors: Kenneth J. Bruza, James P. Godschalx, Edward O. Shaffer, II, Dennis W. Smith, Jr., Paul H. Townsend, III, Kevin J. Bouck, Qing Shan J. Niu
  • Patent number: 6887910
    Abstract: A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.
    Type: Grant
    Filed: October 29, 2002
    Date of Patent: May 3, 2005
    Assignee: Dow Global Technologies Inc.
    Inventors: Kenneth J. Bruza, James P. Godschalx, Edward O. Shaffer, II, Dennis W. Smith, Jr., Paul H. Townsend, III, Kevin J. Bouck, Qing Shan J. Niu
  • Patent number: 6653358
    Abstract: A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.
    Type: Grant
    Filed: October 29, 2002
    Date of Patent: November 25, 2003
    Assignee: Dow Global Technologies Inc.
    Inventors: Kenneth J. Bruza, James P. Godschalx, Edward O. Shaffer, II, Dennis W. Smith, Jr., Paul H. Townsend, III, Kevin J. Bouck, Qing Shan J. Niu
  • Patent number: 6646081
    Abstract: This invention is a polyarylene composition in which resin does not undergo a significant drop in modulus at temperatures above 300° C. during cure. This feature enables one to form porous films by avoiding pore collapse and/or using a wider variety of poragen materials.
    Type: Grant
    Filed: January 11, 2002
    Date of Patent: November 11, 2003
    Assignee: Dow Global Technologies Inc.
    Inventors: James P. Godschalx, Qing Shan J. Niu, Kenneth J. Bruza, Clark H. Cummins, Paul H. Townsend, III
  • Patent number: 6630520
    Abstract: A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.
    Type: Grant
    Filed: November 22, 1999
    Date of Patent: October 7, 2003
    Assignee: Dow Global Technologies Inc.
    Inventors: Kenneth J. Bruza, James P. Godschalx, Edward O. Shaffer, II, Dennis W. Smith, Jr., Paul H. Townsend, III, Kevin J. Bouck, Qing Shan J. Niu
  • Publication number: 20030092785
    Abstract: A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.
    Type: Application
    Filed: October 29, 2002
    Publication date: May 15, 2003
    Inventors: Kenneth J. Bruza, James P. Godschalx, Edward O. Shaffer, Dennis W. Smith, Paul H. Townsend, Kevin J. Bouck, Qing Shan J. Niu
  • Publication number: 20030083392
    Abstract: A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.
    Type: Application
    Filed: October 29, 2002
    Publication date: May 1, 2003
    Inventors: Kenneth J. Bruza, James P. Godschalx, Edward O. Shaffer, Dennis W. Smith, Paul H. Townsend, Kevin J. Bouck, Qing Shan J. Niu
  • Publication number: 20020099158
    Abstract: This invention is a polyarylene composition in which resin does not undergo a significant drop in modulus at temperatures above 300° C. during cure. This feature enables one to form porous films by avoiding pore collapse and/or using a wider variety of poragen materials.
    Type: Application
    Filed: January 11, 2002
    Publication date: July 25, 2002
    Inventors: James P. Godschalx, Qing Shan J. Niu, Kenneth J. Bruza, Clark H. Cummins, Paul H. Townsend
  • Patent number: 6359091
    Abstract: This invention is a polyarylene composition in which resin does not undergo a significant drop in modulus at temperatures above 300° C. during cure. This feature enables one to form porous films by avoiding pore collapse and/or using a wider variety of poragen materials.
    Type: Grant
    Filed: November 22, 1999
    Date of Patent: March 19, 2002
    Assignee: The Dow Chemical Company
    Inventors: James P. Godschalx, Kenneth J. Bruza, Qing Shan J. Niu, Clark H. Cummins, Paul H. Townsend, III