Abstract: The present disclosure discloses a semiconductor processing apparatus, which is configured to perform processing on a wafer. The disclosed semiconductor processing apparatus includes a vacuum interlock chamber, a plurality of apparatus bodies, the apparatus body including a transfer platform, and at least two reaction chambers being arranged along a circumferential direction of the transfer platform, and a temporary storage channel, any two neighboring apparatus bodies being communicated through the temporary storage channel, and the temporary storage channel being configured to temporarily store the wafer. One of the plurality apparatus bodies is connected to the vacuum interlock chamber. The transfer platform is configured to transfer the wafer between the vacuum interlock chamber and the reaction chamber, between the temporary storage channel and the vacuum interlock chamber, and between the temporary storage channel and the reaction chamber.

Abstract: A wafer support structure disposed in a loading chamber of a semiconductor process device to support a wafer and drive the wafer to ascend or descend includes: a lifting component, a supporting component, a compressing component, and an adjusting component. The lifting component includes a lifting shaft. A mounting section is provided on the top surface of the lifting shaft. A first end of the supporting component is sleeved in a mounting hole of the mounting section. An inner peripheral wall of the mounting hole and an outer peripheral wall of the mounting section are separated by an adjustment space. A second end of the supporting component is arranged to extend along a radial direction of the lifting shaft. The compressing component is sleeved on an outer periphery of the mounting section and located in the adjustment space. The adjusting component is connected with the support component.

Abstract: A semiconductor process chamber includes: a reaction chamber; a transfer chamber below the reaction chamber connected to the transfer chamber through a bottom opening; a base with a lifting shaft connected to a bottom of the base, where the base is able to rise and descend between the reaction chamber and the transfer chamber through the bottom opening; and an elastic annular sealing structure. The annular sealing structure is below the base and surrounding the lifting shaft of the base. When the base descends into the transfer chamber, the base presses down and compress the annular sealing structure; and when the base rises into the reaction chamber and pressure on the annular sealing structure is released, the annular sealing structure stretches until it abuts a bottom wall of the reaction chamber. to seal the bottom opening.

Abstract: A magnetron drive mechanism is provided. The magnetron drive mechanism includes: a driving assembly, a rotating assembly, a transmission assembly, and a limiting assembly. The driving assembly is configured to drive the rotating assembly and the transmission assembly to rotate clockwise or counterclockwise around a first rotation axis. The rotating assembly is connected to a magnetron, and through the transmission assembly, the driving assembly drives the rotating assembly and the magnetron to rotate clockwise or counterclockwise around a second rotation axis. The second rotation axis and the first rotation axis are parallel with each other. The limiting assembly is configured to block the rotating assembly from rotating clockwise or counterclockwise, respectively, to confine the magnetron to positions at different radii of the first rotation axis. The present disclosure also provides a magnetron assembly and a reaction chamber.

Abstract: A magnetron drive mechanism is provided. The magnetron drive mechanism includes: a driving assembly, a rotating assembly, a transmission assembly, and a limiting assembly. The driving assembly is configured to drive the rotating assembly and the transmission assembly to rotate clockwise or counterclockwise around a first rotation axis. The rotating assembly is connected to a magnetron, and through the transmission assembly, the driving assembly drives the rotating assembly and the magnetron to rotate clockwise or counterclockwise around a second rotation axis. The second rotation axis and the first rotation axis are parallel with each other. The limiting assembly is configured to block the rotating assembly from rotating clockwise or counterclockwise, respectively, to confine the magnetron to positions at different radii of the first rotation axis. The present disclosure also provides a magnetron assembly and a reaction chamber.

Abstract: A precleaning chamber (100, 200, 300) and a plasma processing apparatus, comprising a cavity (20) and a dielectric window (21, 21?) disposed at the top of the cavity (20), a base (22) and a process assembly (24) surrounding the base (22) are disposed in the precleaning chamber (100, 200, 300), and the base (22), the process assembly (24) and the dielectric window (21, 21?) together form a process sub-cavity (211) above the base (22); and a space of the cavity (20) located below the base (22) is used as a loading/unloading sub-cavity (202), the precleaning chamber (100, 200, 300) further comprises a gas is device (32), the gas inlet device (32) comprises a gas inlet (323), and the gas inlet (323) is configured to directly transport a process gas into the process sub-cavity (211) from above the process assembly (24).

Abstract: A reaction chamber and a semiconductor processing device, comprise a Faraday shielding ring (21) made of a magnetic insulation material and an insulating ring (22) made of an insulating material; the Faraday shielding ring (21) is provided with a slot thereon passing through a ring surface thereof in an axial direction; both the Faraday shielding ring (21) and the insulating ring (22) are disposed in the reaction chamber surrounding an inner peripheral wall of the reaction chamber, and the Faraday shielding ring (21) is stacked on the insulating ring (22) in a vertical direction. A shielding ring (211) is disposed surrounding an inner peripheral wall of the insulating ring (22), the shielding ring (211) is connected to an area of a lower surface of the Faraday shielding ring (21) adjacent to a center of the reaction chamber, and the shielding ring (211) is made of a magnetic insulation material and provided with a slot thereon passing through a ring surface thereof in an axis direction.

Abstract: A precleaning chamber (100, 200, 300) and a plasma processing apparatus, comprising a cavity (20) and a dielectric window (21, 21?) disposed at the top of the cavity (20), a base (22 ) and a process assembly (24) surrounding the base (22) are disposed in the precleaning chamber (100, 200, 300), and the base (22), the process assembly (24 ) and the dielectric window (21, 21?) together form a process sub-cavity (211) above the base (22); and a space of the cavity (20) located below the base (22) is used as a loading/unloading sub-cavity (202), the precleaning chamber (100, 200, 300) further comprises a gas is device (32), the gas inlet device (32) comprises a gas inlet (323), and the gas inlet (323) is configured to directly transport a process gas into the process sub-cavity (211) from above the process assembly (24).

Abstract: A reaction chamber and a semiconductor processing device, comprise a Faraday shielding ring (21) made of a magnetic insulation material and an insulating ring (22) made of an insulating material; the Faraday shielding ring (21) is provided with a slot thereon passing through a ring surface thereof in an axial direction; both the Faraday shielding ring (21) and the insulating ring (22) are disposed in the reaction chamber surrounding an inner peripheral wall of the reaction chamber, and the Faraday shielding ring (21) is stacked on the insulating ring (22) in a vertical direction. A shielding ring (211) is disposed surrounding an inner peripheral wall of the insulating ring (22), the shielding ring (211) is connected to an area of a lower surface of the Faraday shielding ring (21) adjacent to a center of the reaction chamber, and the shielding ring (211) is made of a magnetic insulation material and provided with a slot thereon passing through a ring surface thereof in an axis direction.

Abstract: The present disclosure provides a pre-cleaning chamber. The pre-cleaning chamber includes a cavity, a top cover of the cavity, and an ion filtering unit with venting holes. The ion filtering unit is configured to divide the cavity into an upper sub-cavity and a lower sub-cavity and to filter out ions from plasma when the plasma is moving through the filtering unit from the upper sub-cavity to the lower sub-cavity. The pre-cleaning chamber further includes a carry unit located in the lower sub-cavity for supporting a wafer.