Abstract: A paint thickness measuring device and a computer-implemented method for measuring paint thickness using the same are provided. The paint thickness measuring device includes a first continuous-wave (cw) laser, a second continuous-wave laser, a photomixer, one or more computer processors, and a non-transitory computer-readable memory. The photomixer includes an optical coupler configured to mix laser lights emitted by the first and second continuous-wave lasers and generate a terahertz (THz) wave, a photomixer emitter configured to emit the terahertz wave, and a photomixer receiver configured to detect the terahertz wave reflected off a painted surface. The non-transitory computer-readable memory stores computer program instructions executable by the one or more computer processors to perform operations for paint thickness measurement.

Abstract: A light emitting device, a method of fabricating a light emitting device and a method of controlling light emission. The light emitting device includes a plasmonic structure. The plasmonic structure is configured to have a plurality of localized surface plasmon resonances. The light emitting device also includes a broadband light emitting layer having an emission spectrum substantially overlapping wavelengths of the localized surface plasmon resonances. A spacer layer is disposed between the plasmonic structure and the broadband light emitting layer. A color of light emitted by the broadband light emitting layer is tunable by the localized surface plasmon resonances of the plasmonic structure.

Abstract: A device which detects and/or emits infrared radiation in the mid-infrared to far- infrared region is disclosed herein. The device comprises a first layer comprising a first transition metal dichalcogenide, and a second layer comprising a second transition metal dichalcogenide, wherein the second layer is deposited adjacent to the first layer to form a first interface which interlayer excitons are producible from for rendering the device operable to detect and/or emit infrared radiation in the mid-infrared to far-infrared region.

Abstract: A light emitting device, a method of fabricating a light emitting device and a method of controlling light emission. The light emitting device includes a plasmonic structure. The plasmonic structure is configured to have a plurality of localized surface plasmon resonances. The light emitting device also includes a broadband light emitting layer having an emission spectrum substantially overlapping wavelengths of the localized surface plasmon resonances. A spacer layer is disposed between the plasmonic structure and the broadband light emitting layer. A color of light emitted by the broadband light emitting layer is tunable by the localized surface plasmon resonances of the plasmonic structure.

Abstract: A THz photomixer emitter is disclosed. The emitter comprises a photoconductive material, an antenna structure, and an electrode array. The electrode array is disposed such that an electric field associated with photocarriers generated in the photoconductive material is coupled to the antenna for emission of a THz wave via the antenna structure. The electrode array is configured such that an electric field resonance pattern of the electrode array is substantially aligned with an emission field pattern of the antenna structure.