Abstract: Disclosed are an unblocking apparatus for a furnace discharging pipe and a use method. The unblocking apparatus includes a rail, a rail car that may move along the rail, an unblocking drive mechanism arranged on the rail car, a heat-unblocking component, a cold-unblocking component, and a material receiving component that is used to receive a blocking material in the discharging pipe, and a drive end of the unblocking drive mechanism is detachably connected with one end of the heat-unblocking component and the cold-unblocking component respectively. The present application effectively handles different blockage situations of the furnace discharging pipe by connecting the unblocking drive mechanism with an unblocking rod capable of heat-unblocking and a drilling rod capable of cold-unblocking, thereby two modes of heat-unblocking and cold-unblocking are performed on the furnace discharging pipe; and the discharging pipe may be unblocked by a remote operation.

Abstract: Disclosed are a preparation method for a diamond-based field effect transistor and a field effect transistor, relating to the technical field of semi-conductors.

Abstract: Disclosed are a preparation method for a diamond-based field effect transistor and a field effect transistor, relating to the technical field of semi-conductors.

Abstract: The present application discloses a semiconductor device and a method for forming a p-type conductive channel in a diamond using an abrupt heterojunction, which pertain to the technical field of fabrication of semiconductor devices. The method includes: forming a diamond layer on a substrate; forming one or multiple layers of a heterogeneous elementary substance or compound having an acceptor characteristic on an upper surface of the diamond layer; forming a heterojunction at an interface between the diamond layer and an acceptor layer; forming two-dimensional hole gas at one side of the diamond layer with a distance of 10 nm-20 nm away from the heterojunction; and using the two-dimensional hole gas as a p-type conductive channel. The method enables a concentration and a mobility of carriers to maintain stable at a temperature range of 0° C.-1000° C., thereby realizing normal operation of the diamond device at high temperature environment.

Abstract: A pump rod can include a body that includes a longitudinal axis; and a pin at an end of the body where the pin includes threads where the threads include tangential elliptical roots.

Abstract: The present application discloses a semiconductor device and a method for forming an n-type conductive channel in a diamond using a heterojunction, which pertain to the technical field of fabrication of semiconductor devices. The method comprises: forming a diamond layer on a substrate; and depositing a ternary compound having a donor characteristic and graded components on an upper surface of the diamond layer to form a first donor layer, forming a graded heterojunction at an interface between the diamond layer and the first donor layer, forming two-dimensional electron gas at one side of the diamond layer adjacent to the graded heterojunction, and using the two-dimensional electron gas as the n-type conductive channel. The method enables a concentration and a mobility of carriers in the n-type diamond channel to reach 1013 cm?2 and 2000 cm2/V·s respectively.

Abstract: The present application discloses a semiconductor device and a method for forming a p-type conductive channel in a diamond using an abrupt heterojunction, which pertain to the technical field of fabrication of semiconductor devices. The method includes: forming a diamond layer on a substrate; forming one or multiple layers of a heterogeneous elementary substance or compound having an acceptor characteristic on an upper surface of the diamond layer; forming a heterojunction at an interface between the diamond layer and an acceptor layer; forming two-dimensional hole gas at one side of the diamond layer with a distance of 10 nm-20 nm away from the heterojunction; and using the two-dimensional hole gas as a p-type conductive channel. The method enables a concentration and a mobility of carriers to maintain stable at a temperature range of 0° C.-1000° C., thereby realizing normal operation of the diamond device at high temperature environment.

Abstract: The present application discloses a semiconductor device and a method for forming an n-type conductive channel in a diamond using a heterojunction, which pertain to the technical field of fabrication of semiconductor devices. The method comprises: forming a diamond layer on a substrate; and depositing a ternary compound having a donor characteristic and graded components on an upper surface of the diamond layer to form a first donor layer, forming a graded heterojunction at an interface between the diamond layer and the first donor layer, forming two-dimensional electron gas at one side of the diamond layer adjacent to the graded heterojunction, and using the two-dimensional electron gas as the n-type conductive channel. The method enables a concentration and a mobility of carriers in the n-type diamond channel to reach 1013 cm?2 and 2000 cm2/V·s respectively.

Abstract: A pump rod can include a body that includes a longitudinal axis; and a pin at an end of the body where the pin includes threads where the threads include tangential elliptical roots.

Abstract: A method for manufacturing a graphene transistor based on self-aligning technology, the method comprising: on a substrate (1), forming sequentially graphene material (4), a metal film (5), and photoresist patterns (6) formed by lithography, removing the metal film and the graphene material uncovered by the photoresist, forming an active area, and metal electrodes (7, 8, 9) of a source, a gate, and a drain of the transistor, wherein the source electrode 7 and drain electrode 9 are connected with a metal of the active region, and forming gate photoresist patterns (10) between the source and the drain by lithography, etching off the exposed metal, forming sequentially a seed layer (11), a gate dielectric layer (12), and gate metal (13) on the exposed graphene surface, and finally forming a graphene transistor.

Abstract: A method for manufacturing a graphene transistor based on self-aligning technology, the method comprising: on a substrate (1), forming sequentially graphene material (4), a metal film (5), and photoresist patterns (6) formed by lithography, removing the metal film and the graphene material uncovered by the photoresist, forming an active area, and metal electrodes (7, 8, 9) of a source, a gate, and a drain of the transistor, wherein the source electrode 7 and drain electrode 9 are connected with a metal of the active region, and forming gate photoresist patterns (10) between the source and the drain by lithography, etching off the exposed metal, forming sequentially a seed layer (11), a gate dielectric layer (12), and gate metal (13) on the exposed graphene surface, and finally forming a graphene transistor.